ELECTRONIC ARRAYS MEMORY Search Results

m60013

Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
Contextual Info: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami­ lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are

nec 2716 eprom

Abstract: D2732
Contextual Info: ñ | à */S NEC Electronic U.S.A. Inc. Electronic Arrays Division_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ NMOS /¿PD2364 N E C Ly *-J w DE ] ELECTRONICS INC ST bME7S2S GGObD^ READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times

32Kx16 150ns

Contextual Info: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC. • Combination SRAM/FLASH/EEPROM Module Mixed Technology Memory Moduie 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features The EDI9F3420C combines data SRAM , program (FLASH) and boot (EEPROM) memory arrays in a single

SSOP20

Abstract: SA12 SA12B5 SA16 SA16B3 SA16B6 so20 weight
Contextual Info: Application Specific Discretes A.S.D.TM SA12B5 SA16B3 / SA16B6 SCHOTTKY ARRAYS MAIN APPLICATIONS Any electronic equipment where suitable bus termination is required to avoid signal reflections and distortions : PCs Workstations High frequency processor boards

SSOP20

Abstract: SSOP20 package SA12 SA12B5 SA16 SA16B3 SA16B6 weight SSOP20 package so16 weight
Contextual Info:  Application Specific Discretes A.S.D.TM SA12B5 SA16B3 / SA16B6 SCHOTTKY ARRAYS MAIN APPLICATIONS Any electronic equipment where suitable bus termination is required to avoid signal reflections and distortions : PCs Workstations High frequency processor boards

TC17G Series

Abstract: 74HC family Application Notes toshiba tc110g toshiba tc17g SEMI-E-S1001 TC110G38 1 gate toshiba logic TTL Logic Family list DAP macro language TOSHIBA Gate array macro cell
Contextual Info: TOSHIBA ASIC TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. CMOS GATE ARRAY TC1TOGSERESGITE /«RAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI

toshiba tc110g

Abstract: toshiba toggle nand TC17G Series toshiba tc17g TC110G11 specifications of basic logic gates 74 series TC17G TC110G21 TC110G38 VLSI TECHNOLOGY
Contextual Info: ASIC TOSHIBA TOSHIBA AMERICA ELECTRONIC COMPONENTS, IIMC. CMOS GATE ARRAY TCllOG SERIES GITE ¿RRAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI

General Micro-electronics

Abstract: SMT pitch roadmap ansys darveaux ansys CP-01019-1 Electronic Arrays FR4 thermal expansion constant vs temperature neural network BGA cte amkor flip
Contextual Info: Building Reliability Into Full-Array BGAs Yuan Li, Ph.D., Anil Pannikkat, Ph.D., Larry Anderson, Tarun Verma, Bruce Euzent Altera Corporation 101 Innovation Drive, San Jose, CA 95134 Electronic Arrays, NEC, IMP and Altera Corp. He joined Altera in 1992 and is currently Director

Contextual Info: Spartan-3 1.2V FPGA Family: Introduction and Ordering Information R DS099-1 v1.0 April 11, 2003 Advance Product Specification Introduction The 1.2V Spartan -3 family of Field-Programmable Gate Arrays is specifically designed to meet the needs of high volume, cost-sensitive consumer electronic applications.

SPARTAN-3 XC3S400 PQ208

Abstract: XC3S400 PQ208 xc3s2000 fg676 XC3S200 PQ208
Contextual Info: Spartan-3 1.2V FPGA Family: Introduction and Ordering Information R DS099-1 v1.1 April 24, 2003 Advance Product Specification Introduction The 1.2V Spartan -3 family of Field-Programmable Gate Arrays is specifically designed to meet the needs of high volume, cost-sensitive consumer electronic applications.

SPARTAN-3 XC3S1000

Abstract: diode sy 170 216-0304
Contextual Info: Spartan-3 1.2V FPGA Family: Introduction and Ordering Information R DS099-1 v1.0 April 11, 2003 Advance Product Specification Introduction The 1.2V Spartan -3 family of Field-Programmable Gate Arrays is specifically designed to meet the needs of high volume, cost-sensitive consumer electronic applications.

Contextual Info: - N k A J C BiihiiB i v n a electronic June 1992 ASIC HI-REL DATA SHEET MCM COMPOSITE ARRAYS FEATURES . SUPER CMOS TECHNOLOGY -1 urn DRAWN - 2 METAL LAYERS . SILICON GATE 0.8 nm EFFECTIVE CHANNEL LENGTH 150 MHz TYPICAL TOGGLE FREQUENCY RAM 64 K bit, 29 ns CYCLE TIME

Contextual Info: TOSHIBA ‘ arsai "<ÖS TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. TC160G/160E CMOS Gate Array/Embedded Array 0.8 micron Description Features The TC160G and TC160E with embedded functions series of 0.8 micron gate arrays has a 300ps gate speed and up to 21 OK* usable gates. These members of the DSA family

xc3s400a ftg256

Abstract: xilinx MARKING CODE SPARTAN 3an XC3S700A FGG484 Xilinx XC3S200AN XC3S50A VQ100 Spartan-3an xc3s50an xilinx XC3S200A 8 bit binary numbers multiplication picoblaze UG331
Contextual Info: 6 R Extended Spartan-3A Family Overview DS706 v1.0.1 January 29, 2010 Product Specification General Description The Extended Spartan -3A family of Field-Programmable Gate Arrays (FPGAs) solves the design challenges in many highvolume, cost-sensitive electronic applications. With 12 devices ranging from 50,000 to 3.4 million system gates (as shown in

xc3s500e fg320

Abstract: XC3S500E FGG320 XC3S250E TQG144 XC3S100E TQG144 CP132 "pin-compatible" XC3S100E TQ144 PQ208AGQ0525 xc3s1600e fg320 400-BALL DS312-1
Contextual Info: 06 Spartan-3E FPGA Family: Introduction and Ordering Information R DS312-1 v1.1 March 21, 2005 Advance Product Specification Introduction The Spartan -3E family of Field-Programmable Gate Arrays (FPGAs) is specifically designed to meet the needs of high volume, cost-sensitive consumer electronic applications. The five-member family offers densities ranging from

FGG456

Abstract: LVDSEXT-25 FGG676
Contextual Info: 0<BL Blue> Spartan-3 Automotive XA FPGA Family: Introduction and Ordering R DS314-1 v1.2 October 27, 2006 Product Specification Summary The Xilinx Automotive (XA) Spartan -3 family of Field-Programmable Gate Arrays meets the needs of high-volume, cost-sensitive automotive electronic applications. The five-member family offers densities ranging from 50,000 to 1.5 million

airbag control unit

Abstract: AEC-Q100 LVDSEXT-25
Contextual Info: 0<BL Blue> Spartan-3 Automotive XA FPGA Family: Introduction and Ordering R DS314-1 v1.2.3 January 25, 2008 Product Specification Summary The Xilinx Automotive (XA) Spartan -3 family of Field-Programmable Gate Arrays meets the needs of high-volume, cost-sensitive automotive electronic applications. The five-member family offers densities ranging from 50,000 to 1.5 million

TQG144

Abstract: FGG456 XA3S50
Contextual Info: 0<BL Blue> Spartan-3 Automotive XA FPGA Family: Introduction and Ordering R DS314-1 v1.2.1 November 28, 2006 Product Specification Summary The Xilinx Automotive (XA) Spartan -3 family of Field-Programmable Gate Arrays meets the needs of high-volume, cost-sensitive automotive electronic applications. The five-member family offers densities ranging from 50,000 to 1.5 million

FGG676

Abstract: AEC-Q100 ISO-TS-16949 FGG456
Contextual Info: 0<BL Blue> Spartan-3 Automotive XA FPGA Family: Introduction and Ordering R DS314-1 v1.2.2 November 12, 2007 Product Specification Summary The Xilinx Automotive (XA) Spartan -3 family of Field-Programmable Gate Arrays meets the needs of high-volume, cost-sensitive automotive electronic applications. The five-member family offers densities ranging from 50,000 to 1.5 million

TC150GC8

Abstract: TC150GH2 toshiba tc110g TC140G toshiba tc140g TC110G TC150G89 toshiba toggle nand tc120g
Contextual Info: TOSHIBA TOSHIBA. A M E R IC A ELECTRONIC C O M PO N E N TS , IIMC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 100K useable gates— one of the highest in the industry.

Contextual Info: TOSHIBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N TS , INC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 10OK useable gates—one of the highest in the industry.

TC160G11

Abstract: TOSHIBA TC160G TC160G22 TC160G33 tc160g16 toshiba tc110g TC160G TC163G TC140G TC110G
Contextual Info: TOSHIBA . TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series op e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have

toshiba tc110g

Abstract: CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0
Contextual Info: ASIC TOSH IBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N T S , INC. CMOS ASIC TC120G SKES GOTE-4RRAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in high­

16-Bit Microprocessors

Abstract: ELECTRONIC ARRAYS memory
Contextual Info: m o EDI9F3420C \ ELECTRONIC DESIGNS INC. • Combination SRAM/FLASH/EEPROM Module Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM The EDI9F3420C combines data SRAM , program (FLASH) and boot (EEPROM) memory anrays in a single