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    ELECTRON DETECTOR Search Results

    ELECTRON DETECTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy
    MD8251A/B
    Rochester Electronics LLC 8251A - Serial I/O Controller, 2 Channel(s), HMOS, CDIP28 - Dual marked (5962-8754802XA) PDF Buy
    LM106H/B
    Rochester Electronics LLC LM106 - Voltage Comparator PDF Buy
    MG80C186-10/B
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit PDF Buy
    2504DM/B
    Rochester Electronics LLC 2504 - Successive Approximation Register PDF Buy

    ELECTRON DETECTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron


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    s11141s11142se-171kspd1080e01 PDF

    Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron


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    s11141s11142se-171kspd1080e01 PDF

    electron Detector

    Abstract: S11142 United Detector silicon photodiode electron electron gun SE-171
    Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron


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    s11141s11142se-171kspd1080e01+4electron detectorunited detector silicon photodiodeelectronelectron gun PDF

    Contextual Info: QUAD ELECTRON DETECTOR 15 mm2 AXUVPS7 Dimensions are in inch [metric] units. FEATURES • Ideal for electron detection • Circular active area • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PER ELEMENT PARAMETERS TEST CONDITIONS MIN TYP MAX


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    Contextual Info: QUAD ELECTRON DETECTOR 15 mm2 AXUVPS7 Dimensions are in inch [metric] units. FEATURES • Ideal for electron detection • Circular active area • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PER ELEMENT PARAMETERS TEST CONDITIONS MIN TYP MAX


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    windmill design

    Abstract: 918* replacement R5150-30
    Contextual Info: ELECTRON PRELIMINARY DATA FEB. 1998 MULTIPLIER R5150-30 The R5150-30 series is a new family of ion detectors developed by means of Hamamatsu unique electron trajectory simulation technology. The R5150-30 series has excellent noise elimination effects and an off-axis electrode structure


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    r5150-30s-164-401007e01windmill design+1918* replacement PDF

    Electron Multipliers

    Contextual Info: PRODUCT LINE-UP Electron multipliers are mainly used as positive/negative ion detectors. They are also useful for detecting and measuring vacuum UV rays and soft X-rays. Hamamatsu electron multipliers have a high gain multiplication factor yet low dark current, allowing


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    r4146-10r6985-80r8811r2362+5r5150-10se-164tpmh1354e01b1201electron multipliers PDF

    R5150-10

    Contextual Info: ELECTRON PRELIMINARY DATA FEB. 1998 MULTIPLIER R5150-10 The R5150-10 is a new family of Hamamatsu ion detector. Thanks to Hamamatsu unique electron trajectory simulation technology, it delivers high gain, fast response and wide dynamic range. A newly developed secondary emitting surface


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    r5150-10s-164-401006e01 PDF

    windmill design

    Abstract: R5150-30 R5150-80
    Contextual Info: ELECTRON MULTIPLIER PRELIMINARY DATA FEB. 1998 R5150-80 The R5150-80 is a new family of ion detector developed by means of Hamamatsu unique electron trajectory simulation technology. The R5150-80 has excellent noise elimination effects and an off-axis electrode structure and conversion type


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    r5150-80s-164-401008e01windmill design+1r5150-30 PDF

    GaAs tunnel diode

    Abstract: tunnel diode GaAs darlington transistor for audio power application photo thyristor diode tunnel DATASHEET TUNNEL DIODE Tunnel diode tunnel diode high frequency photocoupler Thyristor transistor power
    Contextual Info: Philips Semiconductors Pro Electron Type Numbering System General PRO ELECTRON TYPE NUMBERING SYSTEM U Basic type number W surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


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    gaas tunnel diodetunnel diode gaasdarlington transistor for audio power applicationphoto thyristor+6diode tunneldatasheet tunnel diodetunnel diodetunnel diode high frequencyphotocoupler thyristortransistor power PDF

    R5150

    Abstract: R5150-90
    Contextual Info: PRELIMINARY Compact Ion Detectors R5150-50, -90 Detection Efficiency vs. Input Ion Energy Structure R5150-90 GND Q-POLE FARADAY-CUP The electron lens created by the Faraday cup, the ion deflection electrodes and the electron multiplier electrodes maintains high detection efficiency even when input ion energy increases.


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    r5150-50r5150-90r5150-b0059ea+2se-171-41r5150 PDF

    BPW50

    Abstract: BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70
    Contextual Info: Philips Semiconductors General Pro electron type numbering PRO ELECTRON TYPE NUMBERING SYSTEM T Control or switching device; e.g. thyristor, low power; with special third letter U Transistor; power, switching W Surface acoustic wave device Basic type number


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    the10bpw50-6bpw50-9bpw50-12+11bzw70-9v1bzw10-15bblu80-24bpw50bzy74-c6v3bzw70bzw10byt-100bzw10-15byt100diode bzw70 PDF

    Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100G FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh


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    axuv100g254nm PDF

    Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100G FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh


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    axuv100g254nm PDF

    capacitor .05m

    Abstract: F4655-12 CAPACITOR 150pf F4655
    Contextual Info: COMPACT MCP ASSEMBLY FOR TOF TIME OF FLIGHT F4655-12 High Speed Detection of Positive / Negative Ion or Electron FEATURES Detection of Positive/Negative lon or Electron High Speed Response High Gain High S/N Ratio High Pulse Height Resolution Wide Dynamic Range


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    f4655-12tmcpf0068f4655s-164-40+3tmcp1010e02capacitor .05mcapacitor 150pf PDF

    C9750

    Abstract: C10990 S11059-78HT S11154-01CT S10604
    Contextual Info: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS


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    c10988mac10627d-82211de128228814+5c9750c10990s11059-78hts11154-01cts10604 PDF

    OFWG*3203

    Abstract: OFWG colour tv power supply bu 1802 chn 719 TRANSISTOR NPN D313 TDA3654 equivalent R1413 TDA2653 colour tv power supply circuit diagram TDA2578
    Contextual Info: Philips Semiconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintenance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits


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    ba481tosaa7197saa7199tda4680+12tda4685pa733cofwg*3203ofwgcolour tv power supply bu 1802chn 719transistor npn d313tda3654 equivalentr1413tda2653colour tv power supply circuit diagramtda2578 PDF

    Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100 FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS TYP MAX 100 10mm x 10mm Active Area


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    axuv100 PDF

    Contextual Info: CHAPTER 12 ELECTRON MULTIPLIER TUBES AND ION DETECTORS Electron multiplier tubes EMT are capable of detecting light at relatively short wavelengths such as soft X-rays and vacuum UV (VUV) radiation and charged particles such as electrons and ions. Ion detectors are designed and optimized for ion detection in mass spectrometers.1) 2) 3)


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    pj 929 diode picture

    Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
    Contextual Info: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits


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    ba481saa7197saa7199btda4680+14tda4685pa733clfc02meh469pj 929 diode picturebf471a7r smd transistortda8391transistor f488tda8351 pin-compatibletda1000germanium drift transistormarking 3u 3t 3c diodegermanium transistor PDF

    S12237-02P

    Contextual Info: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36


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    s12237-02p PDF

    pmt amplifier circuit

    Abstract: pmt divider circuit ICF114 pmt circuit pmt high voltage pmt divider circuit transistor H8770 vacuum tube amplifier electron Detector hamamatsu PMT
    Contextual Info: AR Y MI N PR ELI Electron Detection Unit H8770 HAMAMATSU has introduced new Electron Detection Unit H8770, consist of newly developed extremely fast decay phosphor and high sensitivity compact PMT. Decay time of the phosphor is faster than 1ns, and it can present


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    h8770tpmob0152ea720psse-171-41+10tpmo0121e01pmt amplifier circuitpmt divider circuiticf114pmt circuitpmt high voltagepmt divider circuit transistorvacuum tube amplifierelectron detectorhamamatsu pmt PDF

    BYX38-600

    Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
    Contextual Info: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given


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    byx38-600bzy93-c7v5byx38bzy93+3germanium rectifier diodebyx38 diodegermanium varactor diode PDF

    step recovery diode

    Contextual Info: yv TYPE DESIGNATION PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits —, m ultiples o f such devices and semiconductor chips. "A lth o u g h not all type numbers accord w ith the Pro Electron system, the follow ing explanation is given


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    step recovery diode PDF