ELECTRON DETECTOR Search Results
ELECTRON DETECTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
LBEE5XV2BZ-883 | Murata Manufacturing Co Ltd | Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification) | |||
LBEE5ZZ2XS-846 | Murata Manufacturing Co Ltd | Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.3 Module - CCATS N/A(self classification) | |||
DLW21SH670HQ2L | Murata Manufacturing Co Ltd | CMC SMD 67ohm 320mA POWRTRN | |||
DLW21SH900HQ2L | Murata Manufacturing Co Ltd | CMC SMD 90ohm 280mA POWRTRN |
ELECTRON DETECTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron |
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S11141 S11142 S11141: S11142: SE-171 KSPD1080E01 | |
Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron |
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S11141 S11142 S11141: S11142: SE-171 KSPD1080E01 | |
electron Detector
Abstract: S11142 United Detector silicon photodiode electron electron gun SE-171
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S11141 S11142 S11141: S11142: SE-171 KSPD1080E01 electron Detector S11142 United Detector silicon photodiode electron electron gun | |
Contextual Info: QUAD ELECTRON DETECTOR 15 mm2 AXUVPS7 Dimensions are in inch [metric] units. FEATURES • Ideal for electron detection • Circular active area • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PER ELEMENT PARAMETERS TEST CONDITIONS MIN TYP MAX |
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Contextual Info: QUAD ELECTRON DETECTOR 15 mm2 AXUVPS7 Dimensions are in inch [metric] units. FEATURES • Ideal for electron detection • Circular active area • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PER ELEMENT PARAMETERS TEST CONDITIONS MIN TYP MAX |
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windmill design
Abstract: 918* replacement R5150-30
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R5150-30 R5150-30 S-164-40 1007E01 windmill design 918* replacement | |
Electron MultipliersContextual Info: PRODUCT LINE-UP Electron multipliers are mainly used as positive/negative ion detectors. They are also useful for detecting and measuring vacuum UV rays and soft X-rays. Hamamatsu electron multipliers have a high gain multiplication factor yet low dark current, allowing |
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R4146-10 R6985-80 R8811 R2362 R5150-10 SE-164 TPMH1354E01 B1201 Electron Multipliers | |
R5150-10Contextual Info: ELECTRON PRELIMINARY DATA FEB. 1998 MULTIPLIER R5150-10 The R5150-10 is a new family of Hamamatsu ion detector. Thanks to Hamamatsu unique electron trajectory simulation technology, it delivers high gain, fast response and wide dynamic range. A newly developed secondary emitting surface |
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R5150-10 R5150-10 S-164-40 1006E01 | |
windmill design
Abstract: R5150-30 R5150-80
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R5150-80 R5150-80 S-164-40 1008E01 windmill design R5150-30 | |
GaAs tunnel diode
Abstract: tunnel diode GaAs darlington transistor for audio power application photo thyristor diode tunnel DATASHEET TUNNEL DIODE Tunnel diode tunnel diode high frequency photocoupler Thyristor transistor power
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R5150
Abstract: R5150-90
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R5150-50, R5150-90 R5150- B0059EA SE-171-41 R5150 R5150-90 | |
BPW50
Abstract: BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70
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the10. BPW50-6, BPW50-9, BPW50-12. BZW70-9V1 BZW10-15B. BLU80-24. BPW50 BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70 | |
Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100G FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh |
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AXUV100G 254nm, | |
Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100G FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh |
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AXUV100G 254nm, | |
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capacitor .05m
Abstract: F4655-12 CAPACITOR 150pf F4655
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F4655-12 TMCPF0068 F4655-12 F4655 S-164-40 TMCP1010E02 capacitor .05m CAPACITOR 150pf F4655 | |
C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
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C10988MA C10627 D-82211 DE128228814 C9750 C10990 S11059-78HT S11154-01CT S10604 | |
OFWG*3203
Abstract: OFWG colour tv power supply bu 1802 chn 719 TRANSISTOR NPN D313 TDA3654 equivalent R1413 TDA2653 colour tv power supply circuit diagram TDA2578
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BA481 toSAA7197 SAA7199 TDA4680 TDA4685 pA733C OFWG*3203 OFWG colour tv power supply bu 1802 chn 719 TRANSISTOR NPN D313 TDA3654 equivalent R1413 TDA2653 colour tv power supply circuit diagram TDA2578 | |
Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100 FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS TYP MAX 100 10mm x 10mm Active Area |
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AXUV100 | |
Contextual Info: CHAPTER 12 ELECTRON MULTIPLIER TUBES AND ION DETECTORS Electron multiplier tubes EMT are capable of detecting light at relatively short wavelengths such as soft X-rays and vacuum UV (VUV) radiation and charged particles such as electrons and ions. Ion detectors are designed and optimized for ion detection in mass spectrometers.1) 2) 3) |
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pj 929 diode picture
Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
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BA481 SAA7197 SAA7199B TDA4680 TDA4685 pA733C LFC02 MEH469 pj 929 diode picture bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor | |
S12237-02PContextual Info: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36 |
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pmt amplifier circuit
Abstract: pmt divider circuit ICF114 pmt circuit pmt high voltage pmt divider circuit transistor H8770 vacuum tube amplifier electron Detector hamamatsu PMT
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H8770 H8770, TPMOB0152EA 720ps SE-171-41 TPMO0121E01 pmt amplifier circuit pmt divider circuit ICF114 pmt circuit pmt high voltage pmt divider circuit transistor H8770 vacuum tube amplifier electron Detector hamamatsu PMT | |
BYX38-600
Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
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BYX38-600 BZY93-C7V5 BYX38 BZY93 germanium rectifier diode byx38 diode germanium varactor diode | |
step recovery diodeContextual Info: yv TYPE DESIGNATION PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits —, m ultiples o f such devices and semiconductor chips. "A lth o u g h not all type numbers accord w ith the Pro Electron system, the follow ing explanation is given |
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