AXUV100 Search Results
AXUV100 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AXUV100 | Opto Diode | Optical Sensors - Photodiodes, Sensors, Transducers, SENSOR ELECTRON DETECTION | Original | 2 | |||
| AXUV100AL | Opto Diode | Optical Sensors - Photodiodes, Sensors, Transducers, SENSOR ELECTRON DETECTION 100MM | Original | 2 | |||
| AXUV100CS | Opto Diode | Sensors, Transducers - Accessories - CER SOCKET FOR DIODE | Original | 249.16KB | |||
| AXUV100G | Opto Diode | Optical Sensors - Photodiodes, Sensors, Transducers, SENSOR ELECTRON DETECTION | Original | 2 | |||
| AXUV100TF400 | Opto Diode | SENSOR ELECTRON DETECTION 100MM | Original | 242.68KB | |||
| AXUV100TI/C2 | Opto Diode | Optical Sensors - Photodiodes, Sensors, Transducers, SENSOR ELECTRON DETECTION 100MM | Original | 2 |
AXUV100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PHOTODIODE 100 mm2 AXUV100Al FEATURES • Square active area • 150 nm aluminum filter across top surface • Detection range 17-80 nm • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area |
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axuv100al | |
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Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100G FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh |
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axuv100g254nm | |
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Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100G FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh |
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axuv100g254nm | |
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Contextual Info: PHOTODIODE 100 mm2 AXUV100Ti/C2 FEATURES • Square active area • 200 nm titanium & 50 nm carbon filter across top surface • Detection range 1-12 nm • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C |
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axuv100ti/c2 | |
AXUV100Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100 FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS TYP MAX 100 10mm x 10mm Active Area |
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axuv100 | |
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Contextual Info: PHOTODIODE 100 mm2 AXUV100Al FEATURES • Square active area • 150 nm aluminum filter across top surface • Detection range 17-80 nm • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area |
Original |
axuv100al | |
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Contextual Info: PHOTODIODE 100 mm2 AXUV100Ti/C2 FEATURES • Square active area • 200 nm titanium & 50 nm carbon filter across top surface • Detection range 1-12 nm • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C |
Original |
axuv100ti/c2 | |
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Contextual Info: ELECTRON DETECTION 100 mm2 AXUV100 FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS TYP MAX 100 10mm x 10mm Active Area |
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axuv100 | |
AXUV16ELOHYB1
Abstract: AXUV-100HYB TO46S solar blind photodiode solar photodiodes SXUV20HS1 SXUV20HS1BNC SXUVHS5A PA100V AXUV100
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sxuv20hs1sxuv100mjpa-100pa-100v+10 | |
sxuv20a
Abstract: SXUV100RPD SXUV20BNC AXUV100 sxuv20 SXUV100 SXUV10A solar blind photodiode SXUV20C SXUV300
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sxuv57624x24sxuv30022x15+14 |