ELECTROMAGNETIC PULSE JAMMERS Search Results
ELECTROMAGNETIC PULSE JAMMERS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
BLM21HE601SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm NONAUTO | |||
BLM21HE472BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 4700ohm POWRTRN | |||
BLM15PX330SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN |
ELECTROMAGNETIC PULSE JAMMERS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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hearing aid chip
Abstract: Chirp Spread Spectrum electromagnetic pulse generator kit Xilinx Ethernet development arc welder circuit Nanotron Technologies nanoNET system specifications RF basics ADC hard radiation wireless optical mouse controller
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NA-04-0133-0290-1 hearing aid chip Chirp Spread Spectrum electromagnetic pulse generator kit Xilinx Ethernet development arc welder circuit Nanotron Technologies nanoNET system specifications RF basics ADC hard radiation wireless optical mouse controller | |
CLF1G0035-100P
Abstract: sot1228 electromagnetic pulse jammers
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CLF1G0035-100P; CLF1G0035S-100P CLF1G0035-100P CLF1G0035S-100P 1G0035S-100P sot1228 electromagnetic pulse jammers | |
ATP10K100M
Abstract: 100w1000 Amplifier Research LA250
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250T1G3, 200T2G8A 250T8G18 January/3500 ATP10K100M 100w1000 Amplifier Research LA250 | |
Contextual Info: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 2 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. |
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CLF1G0035-100P; CLF1G0035S-100P CLF1G0035-100P CLF1G0035S-100P 1G0035S-100P | |
PCE3667CT-ND
Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
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CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 PCE3667CT-ND capacitor 56J pF a 69154 SOT1227A 200V470 | |
sot1227
Abstract: 082279 SOT1227A Model 284J 226J
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CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10 sot1227 082279 SOT1227A Model 284J 226J | |
Contextual Info: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1. |
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CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10 | |
ATC 600FContextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 3 — 27 March 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1. |
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CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 ATC 600F | |
SOT1227AContextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1. |
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CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 SOT1227A | |
AN11130
Abstract: Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00
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CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100 AN11130 Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00 | |
Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1. |
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CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 | |
I1228Contextual Info: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. |
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CLF1G0035-100 CLF1G0035-100 I1228 | |
30221
Abstract: LR12010T0200J
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CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100 30221 LR12010T0200J | |
Contextual Info: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation |
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CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100 | |
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Contextual Info: Techniques for Precise Interference Measurements in the Field Using FieldFox handheld analyzers Application Note This application note discusses the different kinds of interference that operators will encounter in both current and new wireless environments. It introduces efficient and effective measurement techniques and instrument requirements for testing interference using modern highperformance spectrum analyzers such as Agilent FieldFox analyzers, which have the versatility |
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5991-0418EN | |
bc857b nxp
Abstract: C5750X7S2A106M Gan transistor C 1972 transistor
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CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 bc857b nxp C5750X7S2A106M Gan transistor C 1972 transistor | |
Contextual Info: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. |
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CLF1G0035S-50 CLF1G0035S-50 | |
Contextual Info: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from |
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CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 | |
100B102KW
Abstract: AN11130 66-0304-00004-000 600F0R 96798
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CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 100B102KW AN11130 66-0304-00004-000 600F0R 96798 | |
MDD 1654
Abstract: TMT Isolator wr 90 x band flange waveguide teledyne yig oscillator 10GHz bandpass filter yig oscillator hp m7928 teledyne microwave mbg ferretec filtronic band-pass
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Trimble ocxo
Abstract: doppler radar circuit for speed sensing airborne pulse doppler radar 24 GHz Microwave Doppler Radar Speed Sensor radio control helicopter circuit diagram advantages of mobile signal jammer circuit z cut quartz piezoelectric properties Camera Jammer Introduction to Radar microwave RADAR motion sensors
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CH-2000 LJFFC-34, UFFC-35, Trimble ocxo doppler radar circuit for speed sensing airborne pulse doppler radar 24 GHz Microwave Doppler Radar Speed Sensor radio control helicopter circuit diagram advantages of mobile signal jammer circuit z cut quartz piezoelectric properties Camera Jammer Introduction to Radar microwave RADAR motion sensors | |
ph 4148 zener diode detail
Abstract: sk100 TRANSISTOR REPLACEMENT equivalent transistor sl100 sl100 npn transistor sonar block diagram air conditioner schematic diagram SL100 transistor pin configuration SL100 npn transistor characteristics Cell Phone Jammers project kit SL100 pin configuration
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AN004901-0900 Z86E31 Z86E40 Z86E83 Z8E001 Z8PE001 ph 4148 zener diode detail sk100 TRANSISTOR REPLACEMENT equivalent transistor sl100 sl100 npn transistor sonar block diagram air conditioner schematic diagram SL100 transistor pin configuration SL100 npn transistor characteristics Cell Phone Jammers project kit SL100 pin configuration |