Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1590
OT-343
Marking ANs
Transistor C 5198
b 514 transistor
BFP450
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siemens rs 1003
Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
Contextual Info: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability
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VPS05605
Q62702-F1592
OT-343
-j100
Sep-09-1998
siemens rs 1003
TRANSISTOR BI 187
Q62702-F1592
VPS05605
TS1440
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PDF
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transistor b 1238
Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Contextual Info: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1
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Original
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VPS05605
Q62702-F1794
OT-343
50Ohm
45GHz
-j100
Sep-09-1998
transistor b 1238
Q62702-F1794
transistor bf 520
transistor bfp 520
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PDF
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142001
Abstract: BFP490 SCT595 SCT-595
Contextual Info: SIEGET 25 BFP490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line
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BFP490
VPW05980
SCT595
200mA
Aug-14-2001
142001
BFP490
SCT595
SCT-595
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PDF
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420 NPN Silicon RF Transistor
Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86
Contextual Info: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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VPS05605
OT-343
45GHz
-j100
Dec-13-1999
420 NPN Silicon RF Transistor
VPS05605
marking AMs 4 pin
marking 53 Sot-343
DIODE bfp 86
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PDF
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BFP420 application notes
Abstract: BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams
Contextual Info: SIEGET 25 BFP420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420
VPS05605
OT343
45GHz
-j100
Aug-20-2001
BFP420 application notes
BFP420 equivalent
BFP420
INFINEON BFP420 (Ams)
transistor bfp420
INFINEON BFP420 Ams
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Contextual Info: SIEGET 25 BFP450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
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BFP450
VPS05605
OT343
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PDF
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TA 490
Abstract: SCT-595 490 transistor 09326
Contextual Info: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line
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VPW05980
SCT-595
200mA
Dec-13-1999
TA 490
SCT-595
490 transistor
09326
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PDF
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TRANSISTOR MARKING YB
Abstract: BFP405F marking al
Contextual Info: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
100MHz.
EHA07307
May-29-2001
TRANSISTOR MARKING YB
BFP405F
marking al
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PDF
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TRANSISTOR MARKING YB
Abstract: BFP420F MARKING 1G TRANSISTOR
Contextual Info: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP420F
100MHz.
EHA07307
May-29-2001
TRANSISTOR MARKING YB
BFP420F
MARKING 1G TRANSISTOR
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PDF
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pin diagram of bf 494 transistor
Abstract: TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346
Contextual Info: SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data 4 • For high power amplifiers 5 • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz 3 2 • Gold metalization for high reliability
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Original
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VPW05980
Q62702-F1721
SCT-595
Sep-09-1998
pin diagram of bf 494 transistor
TA 8825 AN
SOT-595
TA 8825
SCT-595
RF POWER marking 556
PIN CONFIGURATION IC ne 555
BF 949 transistor
09326
TRANSISTOR BO 346
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PDF
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093.266
Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
Contextual Info: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz Transition frequency fT > 17 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line
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Original
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VPW05980
SCT-595
200mA
Nov-17-2000
093.266
09326
V201200
equivalent transistor K 3531
IC 7479
SPICE 2G6
490 transistor
BFP490
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PDF
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Contextual Info: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405F
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TRANSISTOR MARKING YB
Abstract: TSFP-4 BFP405F CJE marking diode
Contextual Info: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
100MHz.
EHA07307
Dec-07-2001
TRANSISTOR MARKING YB
TSFP-4
BFP405F
CJE marking diode
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pin diagram of bf 494 transistor
Abstract: siemens products transistor
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1721
SCT-595
200mA
pin diagram of bf 494 transistor
siemens products transistor
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PDF
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BFP420 application notes
Abstract: INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420
Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP420
OT343
BFP420 application notes
INFINEON BFP420 (Ams)
INFINEON BFP420 Ams
BFP420
BGA420
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PDF
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BFP405F
Abstract: BFP420F TSFP-4
Contextual Info: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405F
BFP405F
BFP420F
TSFP-4
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BFP405
Abstract: BGA420 S21216
Contextual Info: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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BFP405
OT343
BFP405
BGA420
S21216
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PDF
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INFINEON BFP420 Ams
Abstract: BFP420 BGA420
Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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Original
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BFP420
OT343
INFINEON BFP420 Ams
BFP420
BGA420
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PDF
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BFP420 application notes
Abstract: Transistor BFP420 BFP420
Contextual Info: SIEGET 25 BFP420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability
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Original
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BFP420
VPS05605
OT343
BFP420 application notes
Transistor BFP420
BFP420
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PDF
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EHA07307
Abstract: CJE marking diode
Contextual Info: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data For low current applications Smallest Package 1.4 x 0.8 x 0.59mm 3 Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability
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BFP405F
EHA07307
CJE marking diode
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PDF
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Infineon Technologies transistor 4 ghz
Abstract: BFP405 BGA420
Contextual Info: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
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Original
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BFP405
OT343
Infineon Technologies transistor 4 ghz
BFP405
BGA420
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transistor s parameters noise
Abstract: BF 145 transistor
Contextual Info: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
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Original
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VPS05605
OT-343
50Ohm
-j100
Mar-07-2001
transistor s parameters noise
BF 145 transistor
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PDF
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Q62702-F1590
Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746
Contextual Info: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability
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Original
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VPS05605
Q62702-F1590
OT-343
50Ohm
-j100
Sep-09-1998
Q62702-F1590
5198 transistor equivalent
Transistor C 5198
VPS05605
transistor BI 342 746
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PDF
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