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Catalog Datasheet	Type	Document Tags	PDF
KTY temperature sensor Abstract: EHA07245 KTY 15 KTY 14 Contextual Info: SIEMENS 5 Silicon Temperature Sensors 5.1 Introduction Silicon Temperature Sensors The KTY temperature sensor developed by Siemens is based on the principle of the Spreading Resistance. The expression “Spreading Resistance” derives from a method, called the “one-pointmethod” figure 18 used to measure the specific resistivity of semiconductor wafers.	OCR Scan		PDF
KTY temperature sensor Abstract: KTY 14 Contextual Info: Silicon Temperature Sensors Silicon Temperature Sensors 5 Silicon Temperature Sensors The KTY temperature sensor developed by Infineon Technologies is based on the principle of the Spreading Resistance. The expression “Spreading Resistance” derives from a method, called the “one-pointmethod” Figure 13 used to measure the specific resistivity of semiconductor wafers.	Original		PDF

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KTY temperature sensor

Abstract: EHA07245 KTY 15 KTY 14
Contextual Info: SIEMENS 5 Silicon Temperature Sensors 5.1 Introduction Silicon Temperature Sensors The KTY temperature sensor developed by Siemens is based on the principle of the Spreading Resistance. The expression “Spreading Resistance” derives from a method, called the “one-pointmethod” figure 18 used to measure the specific resistivity of semiconductor wafers.

OCR Scan

PDF

KTY temperature sensor

Abstract: KTY 14
Contextual Info: Silicon Temperature Sensors Silicon Temperature Sensors 5 Silicon Temperature Sensors The KTY temperature sensor developed by Infineon Technologies is based on the principle of the Spreading Resistance. The expression “Spreading Resistance” derives from a method, called the “one-pointmethod” Figure 13 used to measure the specific resistivity of semiconductor wafers.

Original

PDF