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    EGNC210MK

    Abstract: JESD22-A114 EGNC210M EGNC210
    Contextual Info: EGNC210MK GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 17.5dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		egnc210mkjesd22-a114egnc210megnc210 PDF

    17127

    Abstract: EGNC210MK
    Contextual Info: EGNC210MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.5dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Linear Gain : 17.5dB(typ.) @ f=0.9GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		egnc210mk25deg17127 PDF

    EGNC210MK

    Contextual Info: EGNC210MK GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 17.5dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		egnc210mkstora37-j100 PDF