EGNC160MK Search Results
EGNC160MK Datasheets Context Search
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Contextual Info: EGNC160MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Linear Gain : 18dB(typ.) @ f=0.9GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGNC160MK 25deg | |
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Contextual Info: EGNC160MK GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 18dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGNC160MK Storage48 -j100 | |
EGNC160MK
Abstract: JESD22-A114
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EGNC160MK EGNC160MK JESD22-A114 |