EGN26C160I2D Search Results
EGN26C160I2D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MTTF
Abstract: 60Ghz GaN amplifier 160W JESD22-A114 EGN26C160I2D
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EGN26C160I2D Gate-Sourc05 MTTF 60Ghz GaN amplifier 160W JESD22-A114 EGN26C160I2D | |
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Contextual Info: EGN26C160I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 16dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGN26C160I2D 25deg | |
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Contextual Info: EGN26C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGN26C160I2D |