EFFICIENCY Search Results

12v 1200mah battery NiMH

Abstract: 12v 1200mah nimh battery db opera 415 12v 1200mah nimh 12v 1200mah battery
Contextual Info: y UCC2956 UCC3956 mmm UNITRODE Switch Mode Lithium-Ion Battery Charger Controller FEATURES Precision 4.1V Reference 1% High Efficiency Battery Charger Solution Average Current Mode Control from Trickle to Over Charge Resistor Programmable Charge Currents

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

Contextual Info: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage Vr r m =200V Average Forward Current IF ( A V ) = 1 . 0 A (Ta=64°C) V a r y Fast Reverse-Recovery Time 35ns (Max.)

ues704

Contextual Info: RECTIFIERS UES704 UES705 UES706 UES704HR UES705HR UES706HR High Efficiency, 20A FEATU RES DESCRIPTIO N • • • • • • The UES704 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz.

Contextual Info: TOSHIBA TA8210AH/AL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8210AH, TA8210AL 20W BTLX2CH AUDIO POWER AMPLIFIER The thermal resistance dj-T of TA8210AH, TA8210AL package designed for low thermal resistance, has a high efficiency of heat radiation.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz

BYV27-50

Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100
Contextual Info: RECTIFIERS High Efficiency, 2.5A UES1101 UES1102 UES1103 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications.

LT10711

Contextual Info: LT1071, LT1071HV 2.5-A HIGH-EFFICIENCY SWITCHING REGULATORS D3344, JULY 19B 9-R E V IS E D A U G U S T 1991 Wide Supply-Voltage Range: LT1071HV . . . 3 V to 60 V LT1071 . . . 3 V to 40 V KC AND KV PACKAGE KV Package Used for Illustration (TOP VIEW) Low Quiescent Current. . . 6 mA Typ

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

Transistor c 4138

Abstract: TIP36 Application Note RFK25 IRF540 p channel
Contextual Info: IN T E G R A T E D C IR C U IT S y UNITRODE High Efficiency Regulator Controller FEATURES • Complete Control fo r a High Current, Low Dropout, Linear Regulator • Fixed 5V or Adjustable O utput Voltage • Accurate 2.5A C urrent L im itin g w ith Foldback

Contextual Info: RECTIFIERS SES5601C SES5602C SES5603C High Efficiency, 25A Center-Tap FEATURES • Low Forward Voltage • Fast Switching Speed • Convenient Package • High Surge Capability • Low Thermal Resistance • Mechanically Rugged TO-3 Package • Available as Positive or Negative Center-Tap

2sc1764

Contextual Info: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)

Contextual Info: TA8401F FUNCTIONAL BRIDGE DRIVER. . Wide operating Supply Voltage Range : Vccopr MIN =3V . Capsealed in Flat Package 16 pin. . Forward and Reverse Rotation, Short Breke Modes are Available by Means of Rotation Control Signals. . High Efficiency is Obtained.

Contextual Info: y UCC3996 U I M IT R O D E ADVANCE INFORMATION Dual Sequencing Hot Swap Power Manager FEATURES DESCRIPTION • Precise Linear Current Amplifier for high efficiency and low voltage drop The UCC3996 family of Hot Swap Power Managers provides hot swap control, fault handling and power supply sequencing of two positive sup­

100L2CZ

Abstract: 10GL2CZ 100L2C 10FL2CZ 10dl2cz
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 10(D,F,G)L2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERTER & CHOPPER APPLICATION. 10.3 MAX 03.2±O .2 • Repetitive Peak Reverse Voltage : V^^=200, 300, 400V • Average Output Recified Current : Io=10A

lpec

Contextual Info: RECTIFIERS SES5801 SES5802 SES5803 High Efficiency, 60A FEATURES • Low Forward Voltage • Fast Switching Speeds • High Surge Capability • Low Thermal Resistance • Mechanically Rugged DO-5 Package • Reverse Polarity Available DESCRIPTION The SES, super-fast recovery, rectifiers are

Contextual Info: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS

Contextual Info: RECTIFIERS SES5701 SES5702 SES5703 High Efficiency, 20A FEATURES • Low Forward Voltage • Fast Switching • Low Thermal Resistance • High Surge Capability • Mechanically Rugged DO-4 Package • Reverse Polarity Available DESCRIPTION The SES, super-fast recovery, rectifiers are

1001-UES1003

Contextual Info: RECTIFIERS UES1001-UES1003 High Efficiency, 1A FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast

S-AU4

Abstract: toshiba rf module
Contextual Info: S-AU4 RF POWER AMPLIFIER MODULE UHF POWER AMPLIFIER MODULE HAM SSB/FM Unit in FEATURES : . Output Power P0á 17W . Minimum Gain Gp=19.2dB . Efficiency ÏT — 35% . 50 0 2— R 2.1±0.2 5 2 .8 15 2T CJ c5 -H -H % Input/Output Impedance n 5 -g fa 5*0115

Contextual Info: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r

Contextual Info: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING TYPE PO W ER SUPPLY APPLICATION U nit in mm CONVERTER & CHOPPER APPLICATION 15.9 M A X. • Repetitive Peak Reverse Voltage V r r m = 600V • A verage Output Recified Current

high voltage linear regulator negative

Abstract: mag amp
Contextual Info: Power Supply Support Functions High Efficiency Linear Regulators UC1834/ UC2834/ UC3834 High Efficiency, Linear Regulator • Equally usable for either positive or negative regulators • 5A load with 0.5V Vin-Vout using external transistor • Internal precision positive and negative references