EEVFK2A221M Search Results

panasonic EEEFK1C470UR

Abstract: 47 vfk EEEFK1H470XP EEEFK1V331P EEEKF1V EEE-FK1H470XP Panasonic 330 vfk eeefk1c101p panasonic EEE-FK1V101XP EEEFK2A151AM
Contextual Info: NOT RECOMMENDED FOR NEW DESIGN NOTICE SUBJECT: V-FKseries Surface Mount Type Aluminum Electrolytic Capacitors Non-RoHS EEV parts 10mm diameter and under, suffix P and R BULLETIN #: NRFND.PG44.06.05.09-4 Date: June 5, 2009 Page 1 of 5 Details: V-FK series Non-RoHS Surface Mount Type Aluminum Electrolytic

GR331

Abstract: en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21
Contextual Info: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary capacitor product lines sourced from eleven key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the

fairchild diode aa14

Contextual Info: MAX5980 Evaluation Kit Evaluates: MAX5980 General Description The MAX5980 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board featuring an Ethernet 4-port power-sourcing equipment (PSE) circuit for -48V or -54V supply rail systems. The IEEEM 802.3af/

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with

MRF8P20140WH/HS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth

Contextual Info: Aluminum Electrolytic Capacitors/ FK Surface Mount Type Type : V Series: FK FK High temperature Lead-Free reflow suffix:Ai Country of Origin Japan n Features Endurance: 2000 to 5000h at 105°C Low impedance (40 to 60% less than FC series) Miniaturized(30 to 50% less than FC series)

Contextual Info: Aluminum Electrolytic Capacitors/ FK Country of Origin Surface Mount Type Series: FK FK Japan V Type: High temperature Lead-Free reflow suffix:A✽ • Features ● Endurance: 2000 to 5000 h at 105 °C ● Low impedance (40 to 60 % less than FC series) Miniaturized (30 to 50 % less than FC series)

C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

EEVFK1H471M

Abstract: EE65 EEEFK0J101P EEEFK0J101UR EEEFK0J102P EEEFK0J220R EEEFK0J221P EEEFK0J331P EEEFK0J331XP EEEFK0J470R
Contextual Info: Aluminum Electrolytic Capacitors/ FK Surface Mount Type FK Series: Type: V • Features ● Endurance: 2000 h to 5000 h at 105 °C ● Low impedance 40 % to 60 % less than FC series Miniaturized (30 % to 50 % less than FC series) ● Vibration-proof product is available upon request. (φ8 <)

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Abstract: panasonic capacitor HFG Electric Double Layer Capacitors, Radial Lead Type
Contextual Info: 2014 CATALOG Electrolytic Capacitors 2014.4 industrial.panasonic.com/ww/ . Electrolytic Capacitors CONTENTS Ordering Information Certificated Products by industry Organizations Polymer Aluminum Capacitors .

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Abstract: EEEFK1C101P EEEFK1E470P EEEFK1E221P EEVFK1E101 EEV-FK1C152 EEVFK1V471Q
Contextual Info: Aluminum Electrolytic Capacitor/FK Surface Mount Type Series: FK Type : V n Features Country of Origin Endurance: 2000 to 5000h at105°C Low impedance 40 to 60% less than FCseries Miniaturization(30 to 50% less than FC series) Vibration-proof product is available upon request.(φ8 <= )

MRF6VP3450H

Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

GA352QR7GF102K

Abstract: ERJ8BQFR25V schottky diode N9 SOD-123 smb schottky diode s4 D2212A r56 magnetic usb readbyte writebyte HFJ24-MAX2E RJ-45 poe ethernet OPTICAL COUPLER
Contextual Info: 19-4026; Rev 0; 2/08 MAX5952A Evaluation Kit/Evaluation System Order the MAX5952AEVCMAXQU for a complete PCbased evaluation of the MAX5952A. Order the MAX5952AEVKIT if you already have a CMAXQUSB interface board or do not require PC-based evaluation of the MAX5952A.

diode MARKING CODE 917

Abstract: EEVFK1A222Q EEVFK1V102M EEVFK1V471Q H1325 EEVFK1C152Q EEVFK1E680P EEVFK0J101P EEVFK0J101UR EEVFK0J102P
Contextual Info: Aluminum Electrolytic Capacitor/FK series Surface Mount Type Series: FK Type : V n Features Country of Origin Endurance: 2000 to 5000h at105°C Low impedance 40 to 60% less than FCseries Miniaturization(30 to 50% less than FC series) Vibration-proof product is available upon request.(f8 <

LDMOS DVB-T transistors

Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with

Contextual Info: 2014 CATALOG Electrolytic Capacitors （Surface Mount Type Aluminum Electrolytic Capacitors） 2014.7 industrial.panasonic.com/ww/ . Conductive Polymer Hybrid Aluminum Electrolytic Capacitors/ZA Surface Mount Type Series: ZA Type: V High temperature Lead-Free reflow

panasonic capacitor HFG

Abstract: Electric Double Layer Capacitors, Radial Lead Type
Contextual Info: 2014 CATALOG Electrolytic Capacitors 2014.7 industrial.panasonic.com/ww/ . Electrolytic Capacitors CONTENTS Ordering Information Certificated Products by industry Organizations Polymer Aluminum Capacitors .

eeefk1v331ap

Abstract: diode MARKING CODE 917 EEEFK1C100AR EEEFK1E471P EEEFK1H101P EEEFK1J101 EEEFK1J680UP EEEFK1V100R EEVFK1E102Q H13 cap
Contextual Info: Aluminum Electrolytic Capacitors/ FK Country of Origin Surface Mount Type Series: FK FK Japan V Type: High temperature Lead-Free reflow suffix:A✽ • Features ● Endurance: 2000 to 5000 h at 105 °C ● Low impedance (40 to 60 % less than FC series) Miniaturized (30 to 50 % less than FC series)

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

EEEFK1A151P

Abstract: EEEFK1H101P EEEFK1E471P EEEFK1E221P EEEFK1V101P EEVFK0J101P EEVFK0J101UR EEVFK0J102P EEVFK0J220R EEVFK0J221P
Contextual Info: Aluminum Electrolytic Capacitor/FK Surface Mount Type Series: FK Type : V n Features Country of Origin Endurance: 2000 to 5000h at105°C Low impedance 40 to 60% less than FCseries Miniaturization(30 to 50% less than FC series) Vibration-proof product is available upon request.(φ8 <= )

EEEFK1H101P

Abstract: EEEFK1C471P EEEFK1V100UR EEEFK1E471P EEEFK1E221P EEVFK1E102Q EEEFK1A151P EEVFK1A222Q EEEFK1C100R EEEFK1C101P
Contextual Info: Aluminum Electrolytic Capacitor/FK n Standard W.V. Cap. µF 22 47 100 6.3 220 330 B 90 1.35 0.26 EEVFK0J220R (1) EEEFK0J220R (4) 2000 (pcs) 4 5.8 B 90 1.35 0.26 EEVFK0J470UR (1) EEEFK0J470UR (4) 2000 5 5.8 C 160 0.70 0.26 EEVFK0J470R (1) EEEFK0J470R (4)