EEL 16 2005 Search Results

high resolution reflective optocoupler

Abstract: 894nm motion sensor doppler effect Balluff ROTARY ENCODER vcsel 1300nm VCSEL multimode 1300nm vcsel spice model motion DOPPLER 1550nm vcsels VCSEL
Contextual Info: VCSELs in Various Sensor Applications By: Dr. Jim Tatum First published in Proceedings of Sensors Expo 2005 FINISAR CORPORATION January 9, 2007 Contents VCSEL 101 ƒ What is a VCSEL? Where is it used? Why? VCSEL Sensor Attributes ƒ Advantages, Uniqueness, etc.

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

D1955NL

Abstract: D1955
Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

Contextual Info: PT6620 Series 6 A 12-V Input Integrated Switching Regulator SLTS036C - FEBRUARY 1999 - REVISED JUNE 2003 Standard Application REMOTE SENSE 1 VIN 4,5,6 PT6620 VOUT 11,12,13 3 C1 STBY 7,8,9,10 + C2 + LOAD Q1 COM COM C1 = Required 330µF electrolytic 1 C2 = Required 330µF electrolytic (1)

ADSN-2051

Abstract: IR SENSOR wheel mouse optical mouse controller ADNS-2610 ir wheel movement sensor Optical encoder mouse encoder microsoft SERIAL MOUSE circuit adns 2051 optical mouse sensor microsoft optical mouse microcontroller mouse ir sensor
Contextual Info: EKM8003 Optical Mouse Controller Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. December 2002 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo

Contextual Info: MODEL: PJ-068B-SMT date 10/23/2012 page 1 of 3 DESCRIPTION: MID MOUNT DC POWER JACK FEATURES •m id m ount for low profile applicat ions •fully shielded •high current rat ing RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age

Contextual Info: data sheet a v a n te k MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek SOT-143 Package Features Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 2.3 GHz 11.0 dB typical Gain at 1.0 GHz

COUGAR

Abstract: CFRN MC33269ST-5.0T3 Cougar Components 172B 26X6 AC293 CL11 50-cfrn 470 NR - 10D
Contextual Info: 2 's e COUGAR COMPONENTS AC293 10 TO 200 MHz TO-8 CASCADABLE AMPLIFIER T y p ic a l Value* L o w N oise F ig u r e . H ig h G a in .

EX2001

Contextual Info: zo/yo/yooz □ 'abh 'qui H TV anjpjj qi cr □ m \ > “□ a TJ m CJ Tl XI m m M IS CO VO I m 00 VO I VO U1 VO > vO U1 VO VO TJ > n x > cn X) > m A D D P A R T N U M B ER EC NO: SH2005-0096 m DRWN:XSZHANG 2001/12/16 CH'KD: 2005/01/06 APPR: YTYAP 2005/01/06

SGA9189Z

Contextual Info: Preliminary SGA-9189 SGA-9189Z Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device is based on a Silicon Germanium

transistor P1z

Abstract: SGA9189Z 130C SGA-9189 transistor 45 f 122
Contextual Info: SGA-9189 SGA-9189Z Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process. The SGA-9189 is

RF MMIC 35z

Abstract: mmic a35 mmic 35z mmic marking L SGA-3586 SGA-3586Z sga3586z SIRENZA MARKING
Contextual Info: SGA-3586 SGA-3586Z Product Description The SGA-3586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

SGA-3563Z

Abstract: SGA3563Z mmic a35 SGA-3563 mmic marking 255 sot363 A35Z mmic marking 255 MMIC SOT 363 marking 850 inductor 470 high gain MMIC AMPLIFIER sot-363
Contextual Info: SGA-3563 SGA-3563Z Product Description The SGA-3563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

Contextual Info: zo/yo/yooz □ 'abh 'qui H TV anjpjj qi cr □ m \ > “□ a CJ TJ m Tl XI m m M IS CO VO I 00 m VO I VO U1 VO > vO U1 VO VO TJ > n x > cn m X) > A D D P A R T N U M B ER EC NO: SH2005-0096 m DRWN:XSZHANG 2001/12/16 CH'KD: 2005/01/06 A PPR: YTYAP 2005/01/06

MMIC "SOT 89" marking

Abstract: SBW-5089Z MMIC "SOT 89" marking 12 mmic amplifier sot-89 ECB-100607 ML200C SBW-5089 SBW5089Z Sirenza amplifier SOT-89 Marking MMIC marking R* SOT89
Contextual Info: Product Description The SBW-5089 Z is a high performance InGaP/GaAs HBT MMIC Amplifier. A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8 GHz and excellent thermal performance. The heterojunction increases

CL10B103KBNC

Abstract: CL10B103K LL1608-FS27NJ ML200C SGL-0163 SGL-0163Z TOKO 470 CLASS D ECB-101761 CL10B103KB device marking sgl
Contextual Info: Product Description The SGL-0163 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5 V. The SGL-0163 has

Contextual Info: MODEL: PJ-030CH-SMT date 07/18/2012 page 1 of 3 DESCRIPTION: DC POWER JACK FEATURES • surface m ount • shielded • rat ed up t o 3.5 A RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age max 16 Vdc rat ed input current cont act resist ance 1

Contextual Info: MODEL: PJ-030DH-SMT date 07/18/2012 page 1 of 3 DESCRIPTION: DC POWER JACK FEATURES • surface m ount • shielded • rat ed up t o 3.5 A RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age max 16 Vdc rat ed input current cont act resist ance 1

S 282-K

Contextual Info: PT6510 Series 8-A 5-V/3.3-V Input Adjustable ISR with Short-Circuit protection SLTS220 FEBRUARY 2004 Features • • • • • • • • • • 8-A Rated Output Current Replaces PT6500 Series High Efficiency 91% for PT6511 Small Footprint (0.75 in², Suffix ‘N’)

Contextual Info: MODEL: PJ-069B-SMT date 10/23/2012 page 1 of 3 DESCRIPTION: MID MOUNT DC POWER JACK FEATURES •m id m ount for low profile applicat ions •fully shielded •high current rat ing RoHS SPECIFICATIONS parameter conditions/description min typ rat ed input volt age

Contextual Info: THIRD ANGLE PROJECTION I ALTERATION I SS U E ITEM CODE ECQE121020FB 1 / 121220FB 1 / 121520FB 1 / 121820FB 122220 FB 1 / / 1 122720FB / 1 123320FB 1 / 123920FB 1 / 124720FB 1 I 125620FB 1 / 126820FB / 1 128220FB / 1 121030FB / 1 121230FB / 1 121530FB / 1 121830FB

Contextual Info: data sheet van « 1982 A V A N TEK MSA-0486 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 86 Plastic Package Features .020 .51 Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 3.2 GHz 12.5 dBm typical Pi dB at 1.0 GHz

Contextual Info: data sheet I0A V A N T EK m sa-°286tm MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 86 Plastic Package Features • • • • • • .020 .51 Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 2.5 GHz