EDO 64MB Search Results

M13S2561616A-5TG

Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Contextual Info: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now

PD4264805G5-A60-7JD

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD42S64805,4264805,42S65805,4265805 64M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, EDO Description The /iPD42S64805, 4264805, 42S65805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

d42s65405g5

Abstract: NEC D42S65405 D42S65405G5-A50-7J D42S65405 42S65405 42S844Q5G5-A60 IC MARKING A60 MPD42S64405
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ //¿PD42S64405,4264405,42S65405,4265405 64M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The /¿PD42S64405, 4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO >s a kind of the page mode and is useful for the read operation.

74LVT16244

Contextual Info: November 1996 Revision 1.0 DATA SHEET EDC8BV724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC8BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module

Contextual Info: cP October 1996 Revision 1.0 ~ DATA SHEET - EDC8UV724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC8UV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module

A1-A10

Contextual Info: SL72B4B8M2F-AxxV 8M X 72 Bits 64MB DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL…-A50V 50ns 18ns 90ns 25ns SL…-A60V 60ns 20ns 110ns 30ns EDO Mode operation

Contextual Info: cP October 1996 Revision 1.0 FUJI' DATA SHEET - * EDC8U V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC8UV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module

Contextual Info: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

Contextual Info: November 1996 Revision 1.0 DATA S H E E T FUJITSU - EDC8B V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC8BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module

Contextual Info: November 1996 Revision 1.0 FUJITSU DATA SHEET - EDC8B V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC8BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module

KVR8X72V84-50EG

Contextual Info: Memory Module Specification KVR8X72V84-50EG EDO Memory Module DESCRIPTION: This document describes ValueRAM's 8M x 72-bit 64MB 168-Pin DIMM (Dual In-line Memory Module). The components on this module include nine EDO (Extended Data Output) 8M x 8-bit DRAM (4K Refresh) in TSOP packages and two 16-bit drivers in SSOP packages. This 50ns

fujitsu power supply

Contextual Info: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC8B V724 2I4 B-60(JIT)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC8BV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module orga­

Contextual Info: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC8UV724 2/4 B-60(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC) General Description The EDC8UV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module orga­

Flash

Abstract: 8MB SDRAM "NOR Flash" 4MB "Serial NOR Flash" 16Mb SDRAM 32MB SDRAM 8MX16 EDO sdram Mobile SDRAM 4Mx16 flash
Contextual Info: Product Selection Guide of ESMT KGD DRAM Updated Date : 11/07/2006 Density Organization Description 4Mb 256Kb*16 Refresh Speed ns Pad coordinates MP EDO DRAM 5V 512 EDO DRAM 3.3V 512 25/35 2 Edge pads Now 35 2 Edge pads Now SDRAM Density Organization Description

3165805AT-60

Contextual Info: 8M x 8-Bit Dynamic RAM HYB 3164805AJ/AT L -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-Version) Advanced Information • 8 388 608 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation

HYB3164(5)805AJ

Abstract: P-SOJ-32-1 TSOP-32
Contextual Info: 8M x 8-Bit Dynamic RAM HYB 3164805AJ/AT L -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-Version) Advanced Information • 8 388 608 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation

MEM4X16E43VTW-5

Abstract: NS4249 MEM4X16E4 MEM4X16E43VTW5
Contextual Info: 4 MEG x 16 EDO DRAM EDO DRAM 4X16E43V FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x16 pinout, timing, functions, and package • 12 row, 10 column addresses (4) 13 row, 9 column addresses (8) • High-performance CMOS silicon-gate process

P-SOJ-32-1

Abstract: TSOP-32
Contextual Info: 8M x 8-Bit Dynamic RAM HYB 3164805AJ/AT L -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-version) Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation

IS41LV16400

Abstract: 32A11A1
Contextual Info: ISSI IS41LV16400 4M x 16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE NOVEMBER 1999 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called

Contextual Info: SIEMENS 8M x 8-Bit Dynamic RAM HYB 3164805AJ/AT L -40/-50/-60 (4k & 8k Refresh, EDO-Version) HYB 3165805AJ/AT(L) -40/-50/-60 Advanced Information • 8 388 608 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation

IS41LV16400

Contextual Info: ISSI IS41LV16400 4M x 16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE AUGUST 2001 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called

Contextual Info: ISSI IS 4 1 L V 1 6 4 0 0 4M x 16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE ADVANCE INFORMATION JULY 1999 DESCRIPTION FEATURES The ISSI IS41LV16400 is 4,194304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page

MS12R

Contextual Info: 16M x 4-Bit Dynamic RAM . o, r, x . HY b 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/ATÌL) -40/-50/-60 v ' ^ (4k & 8k Refresh, EDO-Version) Advanced Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation