EDI88512 Search Results

Contextual Info: ^EDI EDI88512C ELECTRONIC DESIGNS INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM r a i u i i i M c w CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin

SMD transistor n36

Abstract: smd transistor A13 transistor smd f36 CERAMIC FLATPACK SMD a7 Transistor smd transistor A8 EDI88128CS EDI88512CA EDI88512LPA 5962-95600XXMYA
Contextual Info: White Electronic Designs EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Access Times of 15, 17, 20, 25, 35, 45, 55ns The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin packages

Contextual Info: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages

EDI88512CA

Abstract: EDI88128CS EDI8M8512C
Contextual Info: EDI88512CA ELECTRONIC DESGNS IN C .1 Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Features The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a

EDI88512CA20NB

Abstract: EDI88512CA45 and45ns TM315
Contextual Info: EDI88512CA m o \ ELECTRONIC D ESG N S INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a replacement for the 512K x 8 module, EDI8M8512C. All

ED188512CA20N36B

Abstract: ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C
Contextual Info: W5X EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version

8 pin ceramic dip microsemi

Abstract: CERAMIC FLATPACK
Contextual Info: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM.  Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard

75B7

Abstract: EDI88512CA20MM EDI88512CA-RP EDI88512LPA EDI88512CA17MI
Contextual Info: EDI88512CA-RP W 3 X e le c tro n ic designs, in c . 512Kx8 Ruggedized Plastic Static Ram 5 1 2 m Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­

Contextual Info: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM.  Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard

EDI88512LPA17NI

Contextual Info: W D EDI88512CA \ 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version

Contextual Info: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.

Contextual Info: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs

Contextual Info: ^EDI EDI88512VA-RP ELECTRONIC DESIGNS, INC 512Kx8Ruggedized Plastic Static Ram 512Kx8 Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­

EDI88128C

Abstract: EDI88512C
Contextual Info: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs

EM 319

Contextual Info: %ED l EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram EIEO RO M C 0BM3N& M C. 512Kx8 Static RAM CMOS, Monolithic F ea tu re s EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic compo­

EDI88512LPA17MI

Abstract: 75B7 EDI88512CA-RP EDI88512LPA
Contextual Info: W5X EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory T, 20 and 25ns • Access Times: 1 • Data Retention Function LPA version • Extended Temperature Testing

Contextual Info: White Electronic Designs EDI88512CA-RP 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.

Contextual Info: EDI88512CA-RP HI-RELIABILITY PRODUCT 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's a ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military

EDI88128C

Abstract: EDI88512C MIL-PRF38535
Contextual Info: White Electronic Designs EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES „ 512Kx8 bit CMOS Static „ Random Access Memory The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and

SMD transistor n36

Abstract: smd transistor A13 transistor smd f36 EDI88128CS EDI88512CA EDI88512LPA
Contextual Info: EDI88512CA HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Access Times of 15, 17, 20, 25, 35, 45, 55ns The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin packages are pin for pin

Contextual Info: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages

Contextual Info: EDI88512CA White Electronic Designs 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns  Data Retention Function LPA version  TTL Compatible Inputs and Outputs  Fully Static, No Clocks  Organized as 512Kx8

A35Z

Abstract: EDI88512CA35CB EDI88512C
Contextual Info: ^ED I EDI88512CA ELECTRONIC DESIGNS IN C • Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Ik M /h Features The ED I88512C A is a 4 m egabit M onolithic CMOS 512Kx8 bit CM OS Static S tatic RAM. Random Access M em ory • Access Tim es: 2 5 ,3 5 , and 45ns

IC 7587

Contextual Info: W EDI88512CA-RP 3 X 512Kx8 Ruggedized e le c tr o n ic designs, inc. Plastic Static Ram 512m Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­