256kx1
Abstract: 22A16 EDI81257CB A710C 256Kx1 bit A34C
Contextual Info: ^EDI EDI81257CB Electronic Design» Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each. Inputs and outputs are TTL
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edi81257cb256kx1mil-std-883a0vcca17+5a0-a1722a16a710c256kx1 bita34c
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256kx1
Abstract: SRAM flatpack EDI81257CB AL624 wv-ss 8A79
Contextual Info: EDI81257CB ^EDI Electronic D*lgn» inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic M WM E 0iF©MM1]©i Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each. Inputs and outputs are TTL
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edi81257cb256kx1mil-std-883a0-a17+5a0vcca17sram flatpackal624wv-ss8a79
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Contextual Info: ^EDI EDI81257CB Electronic D*$lgnt Inc. High Speed 256K Monolithic SRAM M WM E 0iF©MM1]©i 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB Is a high performance, low power, high speed CMOS Static RAM organized as 262,144 words by one bit each, inputs and outputs are TTL
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uln buffer
Abstract: si1084
Contextual Info: ^EDI EDI81257CB Electronic Design» inc. High Speed 256K Monolithic SRAM OiF@M/OTD[N] 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81257CB is a high performance, low power, high speed CMOS Static RAM organized as 262,144 256Kx1 bit CMOS Static
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edi81257cb256kx1mil-std-883uln buffer+1si1084
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edi8832
Abstract: EDI8834
Contextual Info: ^EDI Static RAM Selector Guide Electronic D««lgna Inc. Static RAMs for High Performance Systems, Commercial and Miilitary; Monolithic and Modules Electronic Designs Incorporated is a lead ing international supplierof high-performance, high-reliability Static RAM products to all seg
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EDI8M8512L
Contextual Info: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28
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edh816h64cx2edi88128pxxnmedi88130csxxnb188130lpsxxnb+7edi88130psxxnb188128cxxlbedi88128cxxlmedi88128lpxxlbedi88128lpxxlmedi88128pxxlbedi8m8512l
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dram zip 256kx16
Abstract: I8833C
Contextual Info: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2
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64kx4 DRAM
Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Contextual Info: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform ance, low power, 262,144bit C M O S Static R A M orga 32Kx8 bit C M O S Static
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edi8833c/lp/p32kx8144bitmil-std-883+1464kx4edi8466cb256kx1edi81256c/lp/p64kx4 dramsram 6tps-1364kx1 dramedi8f8512lp military4kx1 sram5962-89598edi8833lp32kx8 bit low power cmos sramedi84256
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synchronous sram
Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK
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edh816h64cedi2018qcedi20181cedi20182c+12edi20183cedi20184cedi20185cedi2040cedi2041cedi2042csynchronous sram4kx1 dramsram 6tsramdram 64kx16edi8832
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