ED-26 DIODE Search Results

hb5-132

Abstract: S370 S370 UDT
Contextual Info: VISIB LE LIG HT PRODUCTS Light Emitting Diode REV:B DATE:2005/4/26 iDEVICE NO:HB5-132 (H i-R ed ) iLE N S COLOR: V colored diffusion white diffusion colored transparent water clear iPACKAGE DIMENSIONS: NOTE: 1 .All dimensions are In millimeter. 2 .Lead spacing In measured where the

vt1631

Abstract: IT8888G vt8237 via vt8237R Plus chipset south bridge ESM-CN700 it8888 VT1636 VT8237R PLUS VT1622A VT8237R
Contextual Info: ESM-CN700 Series Onboard VIA Eden V4 1 GHz SOM-ETX CPU Module User’s Manual 1st Ed – 26 October 2006 Part No. 2047274100R ESM-CN700 Series FCC Statement THIS DEVICE COMPLIES WITH PART 15 FCC RULES. OPERATION IS SUBJECT TO THE FOLLOWING TWO CONDITIONS:

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

54LS590

Abstract: 1N3064 1N916 SNJ54LS590J 5962-87517
Contextual Info: I 1 LTR REVIS IO NS DATE D ESC R IPTIO N APPROVED REV PA G E REV STATUS OF PAGES REV PAGES Defense Electronics Supply Center Dayton, Ohio Original date of drawing: 26 JANUARY 1988 AMSC N/A 1 2 3 4 PR EPA R ED 5 6 7 8 9 10 BY- 11 12 13 MILITARY DRAWING This drawing is available for use by

115-230V

Abstract: ac dC converter circuit diagram ac to dc converter module LC03-6 IOM2 80912
Contextual Info: Ha rd wa re U se r ’s M an ual , DS 2, J un e 2 00 1 Q-SMINT O Evaluation Board SIPB 80912 Version 1.1 Wi r ed Communications N e v e r s t o p t h i n k i n g . Edition 2001-06-26 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

PEF 4265 T V2.1

Abstract: PEF4265 PG-VQFN-48-15 PEF 4265 PEF4265T GEMINAX MAX d PEB 4265 V1.2 peb 4365 V2.1 GEMINAX - GEMINAX FAMILY vinetic
Contextual Info: O c t o b e r 2 00 6 S LIC -E / TS LIC -E S ub s c ri be r L in e I n t e rf a c e C i rc u it E nh an c ed F ea t ur e S et S LI C - E P E F 42 65 , V er s io n 2 . 1 S LI C - E 2 (P E F 4 26 5- 2) , V e rs i on 2. 1 T S L I C - E ( P E F 4 36 5) , V er s i o n 2 . 1

17300A

Contextual Info: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Ω Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance

17800

Abstract: DIODE ED 26 5SDD If 8000 Vrrm 8000
Contextual Info: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Ω Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance

BH45-704A

Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Contextual Info: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se

1N4474

Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Contextual Info: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.

1N4775

Abstract: 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4784A
Contextual Info: • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4775 thru 1N4784A • LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C

DIODE ED 26

Contextual Info: SKKD 75F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter 4*5 (445 2645* 7 ""#  & &   & &%     ( ( 26( 7 8/  %  "9#: /# $-: ; 7 // <

Contextual Info: • 1N3154-1 THRU 1N3157-1 AVAILABLE IN JAN, JANTX, JANTXV 1N3154 thru 1N3157A and AND JANS PER MIL-PRF-19500/158 • 8.4 V0LT NOMINAL ZENER VOLTAGE 1N3154-1 thru 1N3157A-1 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS

UFT3005

Abstract: 1N1815A 1N1815-A JANTX1N3013B JANTXV1N3013B 1N1814 1N1814A 1N3014A JAN1N3014B JANTX1N3014B
Contextual Info: Zener Regulator Diodes ZEN JANTXV1N3011B 1N1813 1N1813A 1N3012A 1N3012B JAN1N3012B JANTX1N3012B JANTXV1N3012B 1N3013A 1N3013B JAN1N3013B JANTX1N3013B JANTXV1N3013B 1N1814 1N1814A 1N3014A 1N3014B JAN1N3014B JANTX1N3014B JANTXV1N3014B 1N1815 1N1815A 1N3015A

thyristor YS 160 004

Abstract: HIGH VOLTAGE THYRISTOR D183 D184 D185 D186 D187 D188 irf 940 lem current lt 100
Contextual Info: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e

GE-MOV

Abstract: VI30LA20 thyrector V130LA10 varistor V130LA20 V250LA15A gemov GEMOV V250LA4 2754 mov GE 2504
Contextual Info: C SERIES Metal Oxide Varistors RATINGS OF 130-1200 VOLTS D.C., 95 1000 VOLTS RMS, 1-160 JOULES Description: GE-MOV® zinc oxide varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions

MA4SW110

Abstract: sp3t spt31 PIN Beam lead diod
Contextual Info: M an A M P com pany Monolithic PIN Diode Switches MA4SW110, MA4SW210, MA4SW310 V2.00 Features • Broad Bandw idth - S p eciied up to 20 GH z MA4SW110 J1 J2 - 0 0— W - Usable to 26 5 G H z • Low Insertion Loss/H igh Isolation • R ugged, Fu lly M onolithic, G lass En cap s u it e d

teledyne relay 412 screening

Abstract: Teledyne 412D TRANSISTOR j412 412DD-26 412T-12 J412 412D j114dd teledyne 412DD ER114D
Contextual Info: SERIES ESTABLISHED RELIABILITY ESTABLISHED RELIABILITY TO-5 RELAYS 412 DPDT SERIES DESIGNATION RELAY TYPE 412 DPDT basic relay 412D DPDT relay with internal diode for coil suppression DPDT relay with internal diodes for coil transient suppression and polarity

Contextual Info: TO SHIBA 1SV215 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 5 CATV TUNING. U nit in mm High Capacitance Ratio : C 2 V / C2 5 V = 10.5 Typ. 1 .2 5 Low Series Resistance + 0.2 - 0. : rs = 0.6(1 (Typ.) E xcellent C-V Characteristics, and Small Tracking Error.

aj2 diode

Abstract: jedec E12-70 PICTURE TUBE 30-FRAME television circuit diagram rs tube Scans-0017334
Contextual Info: IAJ2 TUNGSOL DIODE COATED F IL A M E N T A R Y CATH O D E FO R T V HIGH V O L T A G E R E C T IF IE R A N Y M O U N T IN G P O S ITIO N SOCKET C LI PS 2 & 10 MAY BE USED AS TI E POSTS AT A P O T E N T I A L N EAR T H A T OF T HE F IL A M E N T B O T T O M VIE W

APKA2810SURCK

Contextual Info: 2.8X1.0mm SMD CHIP LED LAMP APKA2810SURCK HYPER RED Features Description !2.8mmX1.0mm SMT LED, 1.2mm THICKNESS. The Hyper Red source color devices are made with !LOW DH InGaAlP on GaAs substrate Light Emitting Diode POWER CONSUMPTION. !IDEAL FOR BACKLIGHT AND INDICATOR.

Contextual Info: 4.0x4.0mm SURFACE MOUNT LED LAMP KA-4040SURC HYPER RED Features Description !SINGLE COLOR. The Hyper Red source color devices are made with DH !SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER InGaAlP on GaAs substrate Light Emitting Diode. PROCESS. !AVAILABLE ON TAPE AND REEL.

APK3520SURCK

Contextual Info: 3.5x2.0mm SMD CHIP LED LAMP APK3520SURCK Features Description ! 3.5mmX2.0mm SMT !LOW LED, 1.3mm THICKNESS. POWER CONSUMPTION. ! WIDE ! IDEAL HYPER RED The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. VIEWING ANGLE.

Contextual Info: 4.0x4.0mm SURFACE MOUNT LED LAMP AA4040SURC HYPER RED Features Description !SINGLE COLOR. The Hyper Red source color devices are made with DH !SUITABLE InGaAlP on GaAs substrate Light Emitting Diode. FOR ALL SMT ASSEMBLY AND SOLDER PROCESS. !AVAILABLE ON TAPE AND REEL.