ED 05 DIODE Search Results

EM2005

Abstract: MSC 9752 pm8011 K2870
Contextual Info: :0 2: 53 PM SBSLITE ASSP Telecom Standard Product Data Sheet Released sd ay ,1 4D SBSLITE ec em be r, 20 05 08 PM8611 In co n W ed ne SBI Bus Serializer Proprietary and Confidential Released Issue No. 6: December 2005 Do wn lo ad ed by Co nt e nt Te a m of

LRD 18

Abstract: PTI 30 040 pa 0744 s PM180 MARKING CODE smd R05 JTAG xdp CONNECTOR
Contextual Info: 4: 18 PM S/UNI-2488 Telecom Standard Product Datasheet Released ay ,1 4D ec em be r, 20 05 08 :0 PM5381 co n W ed ne sd S/UNI 2488 Do wn lo ad ed by Co nt e nt Te a m of P ar tm in er In SATURN USER NETWORK INTERFACE FOR 2488 M/BITS Datasheet Proprietary and Confidential

3a8gt

Abstract: 1n5gt 1n5gt tube tube 3A8 3A8GT tube newark
Contextual Info: 3A8GT TUNG-SOL D I O D E T R I O D E PENTODE DETECTOR A M P L I F I E R CO AT ED F ILA M EN T SER IES P A RA L L EL 2.8 V. 1.4 V. .05 A. 0.1 A. GLASS IN TERM ED IATE I HE 3 A 8G T A SING LE TH E THREE TAPPED IS A LOVt F I L A M E N T D IO D E, A HIGH U N IT S

PTR80

Contextual Info: PM5342 SPECTRA-155 DATA SHEET ISSUE 5 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER 8: 16 AM PMC-1970133 em be r, 20 05 12 :5 PM5342 Tu es da y, 1 3D ec SPECTRA-155 DATA SHEET PROPRIETARY AND CONFIDENTIAL ISSUE 5: NOVEMBER 2005 Do wn lo ad ed by Co nt e nt Te a m of

10N90

Contextual Info: DATE CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

16N60G

Abstract: HER 107 diode HER 103 diode FMW16N60G 16N60
Contextual Info: DATE CHECKED Jun.-01-'05 CHECKED Jun.-01-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

07N90G

Abstract: 07N90 fmw07n90g
Contextual Info: DATE CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

1128H

Abstract: 1188H 12-Bit Parallel-IN Serial-OUT Shift Register
Contextual Info: 4: 05 AM CRSU 4x2488 Telecom Standard Product Data Sheet Released da y, 07 Ja nu ar y, 20 03 08 :3 PM5395 er In co n Tu es CRSU™ 4x2488 Data Sheet Released Issue 5: December, 2002 Do wn lo ad ed by Pa rtM in er I nc of Pa rtm in Quad Clock Recovery and Synthesis

PIN HEADER 4X1, 2.54 pitch Pin Header

Abstract: diode SD1 03c
Contextual Info: PM5349 S/UNI 155-QUAD ISSUE 7 S/UNI 155 QUAD 05 01 :0 2: 59 PMC-971239 AM DATA SHEET m be r, 20 PM5349 ce S/UNI- y, 13 De 155- QUAD er In co n Tu es da S/UNI-QUAD Do wn lo ad ed by Co nt e nt Te a m of P ar tm in SATURN USER NETWORK INTERFACE 155-QUAD

1N4474

Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Contextual Info: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.

UFT3005

Abstract: 1N1815A 1N1815-A JANTX1N3013B JANTXV1N3013B 1N1814 1N1814A 1N3014A JAN1N3014B JANTX1N3014B
Contextual Info: Zener Regulator Diodes ZEN JANTXV1N3011B 1N1813 1N1813A 1N3012A 1N3012B JAN1N3012B JANTX1N3012B JANTXV1N3012B 1N3013A 1N3013B JAN1N3013B JANTX1N3013B JANTXV1N3013B 1N1814 1N1814A 1N3014A 1N3014B JAN1N3014B JANTX1N3014B JANTXV1N3014B 1N1815 1N1815A 1N3015A

Contextual Info: T O SH IB A TVR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR4J, TVR4N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Unit in mm Repetitive Peak Reverse Voltage : Vrrm = 600, 1000V Average Forward Current : Ip(AV) = 1-2A (Ta = 55°C)

JANS1N6640US

Contextual Info: Signal/General Purpose Diodes SIG JANTX1N6641US JANTX1N6643 JANTX1N6643U JANTXV1N6640 JANTXV1N6640US JANTXV1N6641 JANTXV1N6641US JANTXV1N6643 JANTXV1N6643U JANS1N6640 JANS1N6640US JAN1N4500 JANTX1N4500 JANTXV1N4500 1N6639 1N6639US 1N6642 1N6642U JANTX1N6639

facon diode

Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
Contextual Info: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg

KP-3216SURCK

Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP KP-3216SURCK HYPER RED Features Description !3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. The Hyper Red source color devices are made !LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting !WIDE VIEWING ANGLE. Diode.

KPF-3236SURKVGPBC

Contextual Info: 3.2x3.6mm FULL-COLOR SURFACE MOUNT LED LAMP KPF-3236SURKVGPBC HYPER RED GREEN BLUE Features Description !LOW POWER CONSUMPTION. The Hyper Red source color devices are made ! 3.2mmx3.6mm with DH InGaAlP on GaAs substrate Light Emitting Diode. SMT LED, 1.1mm THICKNESS.

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP KP-2012SURCK HYPER RED Features Description !2.0mmx1.25mm SMT LED, 1.1mm THICKNESS. The Hyper Red source color devices are made !LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting !WIDE VIEWING ANGLE. Diode.

KP-2012SURC

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP KP-2012SURC HYPER RED Features Description !2.0mmx1.25mm SMT LED, 1.1mm THICKNESS. The Hyper Red source color devices are made with !LOW POWER CONSUMPTION. DH InGaAlP on GaAs substrate Light Emitting Diode. !WIDE VIEWING ANGLE.

KP-1608SURC

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP KP-1608SURC HYPER RED Features Description !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. The Hyper Red source color devices are made !LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting !WIDE VIEWING ANGLE. Diode. !IDEAL FOR BACKLIGHT AND INDICATOR.

APEKA4030SURC

Contextual Info: 4.0x3.0mm SMD CHIP LED LAMP APEKA4030SURC HYPER RED Features Description !4.0mmx3.0mm SMT LED, 2.65mm THICKNESS. The Hyper Red source color devices are made !LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting !WIDE VIEWING ANGLE. Diode.

KP-3216SURC

Abstract: 3216SUR
Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP KP-3216SURC HYPER RED Features Description !3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. The Hyper Red source color devices are made with !LOW POWER CONSUMPTION. DH InGaAlP on GaAs substrate Light Emitting Diode. !WIDE VIEWING ANGLE. !IDEAL FOR BACKLIGHT AND INDICATOR.

GHB-0805-R

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0805-R Features Description !2.0mmx1.25mm SMT LED, 1.1mm THICKNESS. The Hyper Red source color devices are made with !LOW POWER CONSUMPTION. DH InGaAlP on GaAs substrate Light Emitting Diode.

.25 watt Zener diode

Abstract: 1N4465 1N4475 1N4474 n448 N449 1N4460 1N4496 1N6485 1N6486
Contextual Info: 1N 4460 thru 1N 4496 and 1N 6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JÀ N S Ï 1.5 WATT G LA SS ZEN ER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C.

Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP KPH-1005SURC HYPER RED Features Description !1.0mmx0.5mm SMT LED,0.7mm THICKNESS. The Hyper Red source color devices are made with DH !LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode. !WIDE VIEWING ANGLE. !IDEAL FOR BACKLIGHT AND INDICATOR.