ECS ISS 400 Search Results

J200 mosfet

Abstract: SSH25N40 J200 SSH25N40A
Contextual Info: Advanced SSH25N40A P o w e r MOSFET FEATURES BVDSS — 400 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge RüS on = 0.2 £2 lD = 25 A ■ E xtended S afe O pe ra ting A rea

Contextual Info: im SEM E IRF140 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V V DSS 28A ID(cont) 0.077Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) ^ dia. ! • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE

IRFP254A

Contextual Info: IRFP254A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 250 V ^ D S o n = 0 . 1 4 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V

Contextual Info: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■

Contextual Info: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00

Power MOSFET P-Channel 250V 50A

Abstract: sfp9634 Power MOSFET SFP9634
Contextual Info: Advanced SFP9634 P o w e r MOSFET FEATURES B V DSS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge -2 5 0 V ^ D S o n — 1 - 3 Q lD ■ E xtended S afe O pe ra ting A rea

sfp9z34

Contextual Info: Advanced SFP9Z34 P o w e r MOSFET FEATURES B V DSS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ = ^ D S o n ID 175°C O pe re ting T em pe rature =

D4825C

Abstract: H12WD a4s90 D4850C crydom series 1 CD489 H10D4890 D-482 P480V H10CA4850
Contextual Info: CRYD 0P1 co 31E D • 2542537 DDDGL.4D 7 « C R Y BULLETIN 802 F2^-3/ C a V D O C O M P A M N Y SERIES 1-HV SCR Output Solid-State Relays 8 Thru 90 Amp High Voltage, AC Output GENERAL DESCRIPTION Opto-lsolated 4000 VRMS ■ Zero Voltage Switching AC ■

D-12

Abstract: IRGBC20F
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

C-238

Abstract: D-12 IRGBF20F transistor c240 transistor C238
Contextual Info: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

transistor C239

Abstract: C-238 D-12 IRGBF20F transistor c237 C-237 transistor c242 transistor C238
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

D-12

Abstract: IRGBC20F
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

D-12

Abstract: IRGBC20F
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

c252 transistor

Abstract: IRGPF20F C249
Contextual Info: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

c252 transistor

Abstract: IRGPF20F
Contextual Info: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

C5320

Abstract: IRGBC20F D-12 mosfet 600v 10a to-220ab *gBC20f
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

IRGPF20F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

IRG4BC40W

Contextual Info: PD - 9.1654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4PC40W

Contextual Info: PD -9.1656B IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4BC30F

Abstract: 555 triangular wave
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1450 IRG4BC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC30F

Contextual Info: 2002-03-11 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-256-85 IRG4PC30F IGBT TO-247 PD - 9.1459A IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30U

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1452C IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC50F

Contextual Info: PD - 9.1468B IRG4PC50F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PC30F

Contextual Info: PD - 9.1459A IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than