ECS ISS 400 Search Results

IRFP254A

Contextual Info: IRFP254A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 250 V ^ D S o n = 0 . 1 4 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V

Contextual Info: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■

Contextual Info: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00

Power MOSFET P-Channel 250V 50A

Abstract: sfp9634 Power MOSFET SFP9634
Contextual Info: Advanced SFP9634 P o w e r MOSFET FEATURES B V DSS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge -2 5 0 V ^ D S o n — 1 - 3 Q lD ■ E xtended S afe O pe ra ting A rea

sfp9z34

Contextual Info: Advanced SFP9Z34 P o w e r MOSFET FEATURES B V DSS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ = ^ D S o n ID 175°C O pe re ting T em pe rature =

D4825C

Abstract: H12WD a4s90 D4850C crydom series 1 CD489 H10D4890 D-482 P480V H10CA4850
Contextual Info: CRYD 0P1 co 31E D • 2542537 DDDGL.4D 7 « C R Y BULLETIN 802 F2^-3/ C a V D O C O M P A M N Y SERIES 1-HV SCR Output Solid-State Relays 8 Thru 90 Amp High Voltage, AC Output GENERAL DESCRIPTION Opto-lsolated 4000 VRMS ■ Zero Voltage Switching AC ■

D-12

Abstract: IRGBC20F
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

C-238

Abstract: D-12 IRGBF20F transistor c240 transistor C238
Contextual Info: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

transistor C239

Abstract: C-238 D-12 IRGBF20F transistor c237 C-237 transistor c242 transistor C238
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

D-12

Abstract: IRGBC20F
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

D-12

Abstract: IRGBC20F
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

c252 transistor

Abstract: IRGPF20F C249
Contextual Info: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

transistor C238

Abstract: transistor c237 transistor c240 C-238 D-12 IRGBF20F transistor c242 c237 ge 239 c238 transistor
Contextual Info: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

c252 transistor

Abstract: IRGPF20F
Contextual Info: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

IRG4BC30F

Abstract: 555 triangular wave
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1450 IRG4BC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC30F

Contextual Info: 2002-03-11 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-256-85 IRG4PC30F IGBT TO-247 PD - 9.1459A IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30U

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1452C IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC40F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1463 IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC30F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1459 IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC50F

Abstract: 80UF
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1468A IRG4PC50F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: ADVANCED POWER Te c h n o l o g y 0 APT5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2

1461C

Abstract: IRG4PC30U
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

motorola 68000

Contextual Info: MOTOROLA • i SEMICONDUCTOR ■ TECHNICAL DATA MC68030 Technical Sum m ary SECOND-GENERATION 32-BIT ENHANCED MICROPROCESSOR The MC68030 is a 32-bit virtu al m em ory m icroprocessor that integrates the fu n c tio n a lity o f an MC68020 core w ith the added capabilities o f an on-chip

3553AM

Abstract: h0063ck
Contextual Info: ykiyjxiyki 19-0388; Rev 2; 2/93 Very F a s t B u ffe r A m p lifie rs Features ♦ Pin for Pin 2nd Source ♦ ♦ ±10V Output Drive Into 5 0 il ♦ 2ns Rise and Fall Times ♦ Wide Range Single or Dual Supply Operation ♦ _ A pplications