ECS ISS 400 Search Results

Contextual Info: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■

Contextual Info: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00

D4825C

Abstract: H12WD a4s90 D4850C crydom series 1 CD489 H10D4890 D-482 P480V H10CA4850
Contextual Info: CRYD 0P1 co 31E D • 2542537 DDDGL.4D 7 « C R Y BULLETIN 802 F2^-3/ C a V D O C O M P A M N Y SERIES 1-HV SCR Output Solid-State Relays 8 Thru 90 Amp High Voltage, AC Output GENERAL DESCRIPTION Opto-lsolated 4000 VRMS ■ Zero Voltage Switching AC ■

D-12

Abstract: IRGBC20F
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

C-238

Abstract: D-12 IRGBF20F transistor c240 transistor C238
Contextual Info: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

D-12

Abstract: IRGBC20F
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

c252 transistor

Abstract: IRGPF20F C249
Contextual Info: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

transistor C238

Abstract: transistor c237 transistor c240 C-238 D-12 IRGBF20F transistor c242 c237 ge 239 c238 transistor
Contextual Info: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

c252 transistor

Abstract: IRGPF20F
Contextual Info: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V

C5320

Abstract: IRGBC20F D-12 mosfet 600v 10a to-220ab *gBC20f
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

IRG4BC30F

Abstract: 555 triangular wave
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1450 IRG4BC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4BC30U

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1452C IRG4BC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4PC40F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1463 IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC30F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1459 IRG4PC30F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: ADVANCED POWER Te c h n o l o g y 0 APT5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2

1461C

Abstract: IRG4PC30U
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: SC11091/SC11095 2400 bps Universal Modem Advanced Controller SIERRA SEMICONDUCTOR □ R everse c o m p a tib le w ith □ S u p p o rts M N P 2 -5 a n d CCITT □ □ □ □ □ □ □ □ □ 9 1 61 ^Q.r\rtnnnrkfin SC 11011,2 1,61 D irect in terface to SC11006,

complementary JFET

Abstract: LH0063 Hypertronics LH0063CK YSK0102004 BB3553AM Robinson Hudson Robinson Nugent BB3553 LH0063C
Contextual Info: ykiyjxiyki 19-0388; Rev 2; 2/93 Very F a s t B u ffe r A m p lifie rs _ A p p lic a tio n s High Speed Line Drivers Video D rivers/Im pedance Transform ation N uclear Instrum entation A m p lifie rs O perational A m p lifie r Isolation

Contextual Info: scuou SIERRA SEMICONDUCTOR 2400 bps Modem Advanced Controller MAC 9 □ V.22 bis, V.22, V.21, 212A a n d 103 sta n d a rd s □ D irect in terface to S C I 1006/024 □ C o m p le te "A T " c o m m a n d set av a ila b le in firm w a re □ B uilt-in U A R T

Contextual Info: P R E LIM IN A R Y A m 1 8 6 E R a n d AMDH A m 1 8 8 E R High-Performance, 80C186- and 80C188-Compatible, 16-Bit Embedded Microcontrollers with RAM DISTINCTIVE CHARACTERISTICS — DMA to and from asynchronous serial port • ■ — Lower system cost with higher performance

TECHNICAL SPECS OF IR 736 P

Contextual Info: M ic r o c h ip P IC 1 6 C 5 5 X EPROM-Based 8-Bit CMOS Microcontroller Devices included in this data sheet: P iin • PIC16C554 • PIC16C556 • PIC16C558 Diagram PDIP, SOIC, Windowed CERDIP R A 2- RA3-. High Performance RISC CPU: RA4/T0CKI MÜLR- • Only 35 instructions to learn

Contextual Info: M PICI 6C62X A ic r o c h ip EPROM-Based 8-Bit CMOS Microcontroller Pin Diagrams Devices included in this data sheet: Referred to collectively as PIC16C62X(A). • PIC16C620 • PIC16C621 • PIC 16C 622 PDIP, SOIC, Windowed CERDIP • PIC16C620A • PIC16C621A

B10320

Contextual Info: $ M ic r o c h ip P I C 1 6 C 7 X 1 8-Bit CMOS Microcontrollers with A/D Converter Devices included in this data sheet: PIC16C71X Peripheral Features: • PIC16C710 • TimerO: 8-bit timer/counter with 8-bit prescaler • PIC16C71 • PIC16C711 • 8-bit multichannel analog-to-digital converter

tms44c251

Contextual Info: sn Z O Z frgrj > m 3304604 OOllSflT 7fiT fflLLC This document is preliminary. As such, it contains data derived from func­ tional simulations and performance estimates. LSI Logic has not verified either the functional descriptions, or the electrical and mechanical specifications