ECOSPARK 105 Search Results

ISL9V5036P3

Contextual Info: ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next

Contextual Info: ISL9V5036P3_F085 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit,

IGBT DRIVER ignition coil automotive

Abstract: ISL9V5045S3 ISL9V5045S3S ISL9V5045S3ST
Contextual Info: ISL9V5045S3ST EcoSPARK N-Channel Ignition IGBT 500mJ, 450V Features General Description „ SCIS Energy = 500mJ at TJ = 25oC The ISL9V5045S3ST is next generation ignition IGBT that offer outstanding SCIS capability in the industry standard D2-Pak TO-263 plastic package. This device

Contextual Info: ISL9V5045S3ST EcoSPARK N-Channel Ignition IGBT 500mJ, 450V Features General Description o ̈ SCIS Energy = 500mJ at TJ = 25 C The ISL9V5045S3ST is next generation ignition IGBT that offer outstanding SCIS capability in the industry standard D2-Pak TO-263 plastic package. This device

Contextual Info: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description  SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended

Contextual Info: FJP5554 High Voltage Fast Switching Transistor Features • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 1.Base TO-220 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units 1050 V

100nf 100 capacitor

Abstract: 1N4937 carbon film resistor
Contextual Info: May, 2003 Application Note 9026 TIP-Smart Power Module Test Board I SPM TEST BOARD for use in Direct Interface with CPU 2003 Fairchild Semiconductor Corporation 1 Rev. A, May 2003 ©2003 Fairchild Semiconductor Corporation 2 C23 102 C22 105 C12 471 C11

60V 60A TO-252 N-CHANNEL

Abstract: 60V 60A TO-252 FDB2552 FDP3652 FDB2532 SAS 251 HUFA75623P3 TO-251 fairchild 30K OHM FDP3632
Contextual Info: www.fairchildsemi.com Americas Customer Response Center Fairchild Semiconductor 222 West Las Colinas Boulevard Suite 380 Irving, TX 75039 Tel: 888-522-5372 Fax: 972-910-8036 China Fairchild Semiconductor Hong Kong Ltd. Shenzhen Representative Office Room 3107, Shun Hing Square

FDMA1025P

Abstract: marking 31A
Contextual Info: FDMA1025P Dual P-Channel PowerTrench MOSFET –20V, –3.1A, 105mΩ Features tm General Description „ Max rDS on = 155mΩ at VGS = –4.5V, ID = –3.1A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra portable applications. It features two independent P-Channel

Contextual Info: FDS9958 tm Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features General Description ̈ Max rDS on =105mΩ at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench®

N mosfet 100v 200A

Abstract: 100V N-channel mosfet FQH90N10V2
Contextual Info: QFET FQH90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)

N mosfet 100v 200A

Abstract: FQA90N10V2 100V N-Channel MOSFET
Contextual Info: QFET FQA90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)

Contextual Info: FDS9958_F085 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ Features General Description ̈ Max rDS on =105mΩ at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench®

V5036P

Abstract: IGBT DRIVER ignition coil automotive ISL9V5036P3 ISL9V5036S3ST
Contextual Info: ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT General Description Applications • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications The ISL9V5036S3ST, ISL9V5036P3, and ISL9V5036S3 are the next

Contextual Info: FDS89161LZ Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mΩ Features General Description ̈ Max rDS on = 105 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

IGBT DRIVER ignition coil automotive

Abstract: V2540S igbt spice automotive ignition automotive ignition coil ignition igbt ISL9V2540S3S ISL9V2540S3ST advance ignition igbt ignition
Contextual Info: ISL9V2540S3S EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V General Description Features o ! SCIS Energy = 250mJ at TJ = 25 C ! Logic Level Gate Drive Applications ! Automotive Ignition Coil Driver Circuits ! Coil - On Plug Applications Package The ISL9V2540S3S is a next generation ignition IGBT that

v3040s

Abstract: V3040P V3040D
Contextual Info: ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer

V3036S

Abstract: V3036D
Contextual Info: ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the next generation IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the industry standard D²Pak (TO-263) and TO-220 plastic packages. These devices are

FDS89161LZ

Contextual Info: FDS89161LZ Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mΩ Features General Description „ Max rDS on = 105 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mW Features Description • RDS on = 6.85mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mW Features Description • RDS on = 6.7mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

IGBT DRIVER ignition coil automotive

Abstract: automotive ignition coil ignition coil IGBT ignition spice smart ignition igbt ignition IGBT igbt ignition automotive ignition automotive ignition coil on plug ignition IGBTS drivers
Contextual Info: ISL9V5045S3S / ISL9V5045S3 EcoSPARKTM N-Channel Ignition IGBT 500mJ, 450V Features General Description „ SCIS Energy = 500mJ at TJ = 25oC The ISL9V5045S3S and ISL9V5045S3 are next generation ignition IGBTs that offer outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This

V3036P

Abstract: V3036S ignition IGBT TO-220AA ISL9V3036D3ST ISL9V3036D3S ISL9V3036P3 ISL9V3036S3S programmable ignition automotive V3036D
Contextual Info: ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the next generation IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the industry standard D²Pak (TO-263) and TO-220 plastic packages. These devices are

V3036D

Contextual Info: ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT General Description Applications The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the next generation IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the industry standard D²Pak (TO-263) and TO-220 plastic packages. These devices are