ECG 778 Search Results

DK55

Abstract: D-80675 S1630 nissei bv TEKELEC* te 358 SEI 701 Hitachi DSAUTAZ006 TEKELEC te 358 ericsson msc lt -7249
Contextual Info: HITACHI EUROPE Electronic Components Group Headquarters HITACHI EUROPE LTD Whitebrook Park, Lower Cookham Road, Maidenhead, Berkshire, SL6 8YA Tel.: +44 1628 585 000; Fax: +44 1628 778 322 www.hitachi-eu.com/hel/ecg Offices: Czech Republic HITACHI EUROPE LTD

CY7C63803-SXC

Abstract: HC49/SMD wiggle 2.5 GHz H-STUB Wiggle Antenna CAP SMD 0.47uF 25V 10 CERAMIC Xr5 0805 0805 led bicolor 4.7 uf/50v smd capacitor antenna Yageo CYWUSB6936 cy7c63803
Contextual Info: CYRF6936 WirelessUSB LP 2.4 GHz Radio SoC Features • 2.4 GHz Direct Sequence Spread Spectrum DSSS radio transceiver ■ Battery Voltage Monitoring Circuitry ■ Supports coin-cell operated applications ■ Operating voltage from 1.8V to 3.6V ■ Operating temperature from 0 to 70°C

CY7C63803-SXC

Abstract: ufd 72 LNA RSSI cyrf6936 PA6 GF 15 CYRF6936-40LFXC COL10 CRC16 CYRF6936 CYWUSB6934 IND0402
Contextual Info: CYRF6936 WirelessUSB LP 2.4 GHz Radio SoC Features • 2.4 GHz Direct Sequence Spread Spectrum DSSS radio transceiver ■ Battery Voltage Monitoring Circuitry ■ Supports coin-cell operated applications ■ Operating voltage from 1.8V to 3.6V ■ Operating temperature from 0 to 70°C

Contextual Info: CYRF6936 WirelessUSB LP 2.4 GHz Radio SoC WirelessUSB™ LP 2.4 GHz Radio SoC Features • Battery Voltage Monitoring Circuitry ■ Supports coin-cell operated applications ■ Operating voltage from 1.8 V to 3.6 V ■ Operating temperature from 0 °C to 70 °C

ECG778

Abstract: ECG1774 ECG1777 ECG1409C ECG888M ECG889M ECG1771 ECG1845 ECG778S ECG887M
Contextual Info: PHILIPS E C ù INC 3H t B tbSB'iSä DQQh771 T IECG 1C and Module Circuits E C G 778S 8-Pin SIP See Fig. L35 Dual Internally Compensated High Performance Operational Amplifier, V c c = ± 1 5 V Typ T ^77~2J EC G 887M 8-Pin DIP See Fig. L98 Lo Power JFET Input Op Amp

ECG diodes

Abstract: CYRF6936-40LFXC L3 SOT23 UAR72-4N5J10 LNA RSSI cyrf6936 40ltxc cyrf6936 CY7C63803-SXC cyrf6936 programming IND0402
Contextual Info: CYRF6936 WirelessUSB LP 2.4 GHz Radio SoC Features • 2.4 GHz Direct Sequence Spread Spectrum DSSS radio transceiver ■ Battery Voltage Monitoring Circuitry ■ Supports coin-cell operated applications ■ Operating voltage from 1.8 V to 3.6 V ■ Operating temperature from 0 to 70°C

ECG diodes

Abstract: L3 SOT23 MINIPROG CY7C63803 tyco header 6936 6 channel rc controller CY7C63803-SXC TV-20R
Contextual Info: CYRF6936 WirelessUSB LP 2.4 GHz Radio SoC Features • 2.4 GHz Direct Sequence Spread Spectrum DSSS radio transceiver ■ Battery Voltage Monitoring Circuitry ■ Supports coin-cell operated applications ■ Operating voltage from 1.8 V to 3.6 V ■ Operating temperature from 0 to 70°C

Hitachi DSA0045

Abstract: SC-59A HRW0302A
Contextual Info: HRW0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-015G Z Rev 7 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA002759

Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline

hitec 410

Abstract: Hitachi DSA0023 HITACHI DIODE hitachi ic 2SK3215 Hitachi DSA00239
Contextual Info: 2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =350mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline

Hitachi DSA002714

Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition March 1, 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz)

DUAL GATE MOS-FET

Abstract: 3SK317 DSA003643
Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline

marking code g1s

Abstract: 3SK317 SC-82AB Hitachi DSA00240
Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline

LT025MD

Abstract: sharp laser diode lt025md ecg 778 ST3040 LT025M sharp laser diode 780 nm
Contextual Info: Laser Diodes LT025MD LT025MD • High Power Laser Diode 780nm-40nnW Features ■ Outline Dimensions (U nit : m m ) (1) H igh po w er (M axim um optical po w er o u tp u t: 40mW) (2) W a v e le n g th : 780nm (3) T ra n sv e rse m o d e ■ Applications (1) O ptical disc eq u ip m en t

HAT1020R

Abstract: MS-012AA Hitachi DSA00309
Contextual Info: HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H Z 9th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D

Hitachi DSA0097

Abstract: Hitachi nor DP-20N
Contextual Info: Unit: mm 24.50 25.40 Max 6.30 11 1 7.00 Max 20 10 1.30 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 1.27 Max 2.54 Min 5.08 Max 0.89 7.62 + 0.11 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Weight reference value DP-20N — Conforms 1.26 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

DP-14

Abstract: Hitachi DSA0022 Hitachi DSA00227
Contextual Info: Unit: mm 19.20 20.32 Max 8 6.30 7.40 Max 14 1.30 7 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 2.39 Max 2.54 Min 5.06 Max 1 7.62 + 0.10 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Weight reference value DP-14 Conforms Conforms 0.97 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

FP-16DN

Abstract: Hitachi DSA0022 Hitachi DSA00225
Contextual Info: Unit: mm 10.06 10.5 Max 9 1 8 1.27 *0.42 ± 0.08 0.40 ± 0.06 0.10 ± 0.10 0.80 Max *0.22 ± 0.05 0.20 ± 0.04 2.20 Max 5.5 16 0.20 7.80 +– 0.30 1.15 0° – 8° 0.70 ± 0.20 0.15 0.12 M *Dimension including the plating thickness Base material dimension

LT024MD

Abstract: lt024* sharp LT024PD
Contextual Info: Laser Diodes LT024MD LT024MD • High Power Laser Diode 780nm-30mW Features ■ (1 ) H ig h p o w e r (M a x im u m o p tica l p o w e r o u t p u t : 3 0 m W ) (2 ) W a v e le n g th : 7 8 0 n m (3 ) T ra n sv e rse m od e ■ Applications (1 ) O p tica l d is c e q u ip m e n t

DP-14

Abstract: FP-14DA FP-14DN Hitachi DSA0022 Hitachi DSA00224
Contextual Info: Unit: mm 19.20 20.32 Max 8 6.30 7.40 Max 14 1.30 7 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 2.39 Max 2.54 Min 5.06 Max 1 7.62 + 0.10 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Weight reference value DP-14 Conforms Conforms 0.97 g Unit: mm 10.06 10.5 Max

HITACHI

Abstract: Hitachi DSA0022 Hitachi DSA00225
Contextual Info: Unit: mm 24.50 25.40 Max 6.30 11 1 7.00 Max 20 10 1.30 2.54 ± 0.25 0.48 ± 0.10 0.51 Min 1.27 Max 2.54 Min 5.08 Max 0.89 7.62 + 0.11 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Weight reference value DP-20N — Conforms 1.26 g Unit: mm 12.6 13 Max

FP-14DA

Abstract: FP-14DN Hitachi DSA0022 Hitachi DSA00225
Contextual Info: Unit: mm 10.06 10.5 Max 8 5.5 14 1 0.10 ± 0.10 1.42 Max 1.27 *0.42 ± 0.08 0.40 ± 0.06 *0.22 ± 0.05 0.20 ± 0.04 2.20 Max 7 + 0.20 7.80 – 0.30 1.15 0° – 8° 0.70 ± 0.20 0.15 0.12 M *Dimension including the plating thickness Base material dimension

FP-16DN

Abstract: Hitachi DSA0022 Hitachi DSA00224
Contextual Info: Unit: mm 19.20 20.00 Max 1 7.40 Max 9 6.30 16 8 1.3 0.48 ± 0.10 2.54 Min 5.06 Max 2.54 ± 0.25 0.51 Min 1.11 Max 7.62 + 0.13 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Weight reference value DP-16 Conforms Conforms 1.07 g Unit: mm 10.06 10.5 Max

Contextual Info: HZM6.8ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-613A Z Rev 1 Jan. 1999 Features • HZM6.8ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.