EC MARKING NPN Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package • Code SSSMini3-F2 • Marking Symbol: 9N • Pin Name 1: Base 2: Emitter

2SC5946

Abstract: 2SC5946G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 9N • Pin Name 1: Base

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y • Pin Name 1: Base

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package ■ Features • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: 2V • Pin Name 1: Base 2: Emitter 3: Collector

VEBO-15V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package ■ Features • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter

2SD2623G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: 2V • Pin Name 1: Base 2: Emitter 3: Collector

2SC3936G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3936G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: K • Pin Name 1. Base 2. Emitter 3. Collector

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter 3: Collector

UNR32A5G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A5G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: HC • Pin Name 1: Base 2: Emitter

UNR32A8G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A8G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: HF • Pin Name 1: Base 2: Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S • Pin Name 1: Base 2: Emitter

UNR32A1G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A1G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: FK • Pin Name 1: Base 2: Emitter

UNR32A2G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A2G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: FL • Pin Name 1: Base 2: Emitter

UNR32A6G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A6G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: HD • Pin Name 1: Base 2: Emitter

UNR32ANG

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: KL • Pin Name 1: Base 2: Emitter

UNR32AMG

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AMG Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: KH • Pin Name 1: Base 2: Emitter

UNR32A0G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A0G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: KT • Pin Name 1: Base 2: Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S • Pin Name 1: Base 2: Emitter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3936G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: K • Pin Name

Contextual Info: BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 65A EA BCW 65B EB BCW 65C EC BCW66F EF BCW 66G EG BCW 66H EH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION

marking 65B

Abstract: BCW65B BCW65A BCW65C
Contextual Info: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _