EA MARKING CODE Search Results

2sa198

Abstract: 2SC5344S 2SA1981S
Contextual Info: 2SA1981S Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S Ordering Information Type NO. Marking 2SA1981S Package Code SOT-23 EA : hFE rank Outline Dimensions

2SA1981SF

Abstract: Transistor 2SC5344SF
Contextual Info: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions

2SA1981SF

Abstract: 2SC5344SF
Contextual Info: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions

STA1298

Abstract: STC3265
Contextual Info: STA1298 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with STC3265 Ordering Information Type NO. Marking STA1298 Package Code SOT-23 EA : hFE rank Outline Dimensions

2SA1981SF

Abstract: 2SC5344SF
Contextual Info: 2SA1981SF PNP Silicon Transistor Description PIN Connection • Audio power amplifier application 3 Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF 1 2 Ordering Information Type NO. 2SA1981SF Marking SOT-23F Package Code EA □ □

EA SOT-23

Abstract: 2SA1981S 2SC5344S
Contextual Info: 2SA1981S PNP Silicon Transistor Description PIN Connection • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S C B E Ordering Information Type No. 2SA1981S SOT-23 Marking Package Code EA □ □ ① ②

drcf124

Contextual Info: Doc No. TT4-EA-14094 Revision. 2 Product Standards Transistors with Built-in Resistor DRAF124X0L DRAF124X0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRCF124X DRA3124X in ML3 type package 0.6 3 • Features  Marking Symbol:

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED diode k77 K77 diode
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

VISHAY diode MARKING ED

Abstract: K77 diode Vishay DaTE CODE BAT750 BAT750-GS08 BAT750-GS18 vishay ED
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

D438

Abstract: 4384
Contextual Info: Pomona Model 4384 Thermoplastic Box With Card Guides MATERIALS: Box and Cover: Glass filled nylon. Color: Blue Marking: 4384 Screw: 4 Ea. Pan Head, self-tapping #2-32 cover crews. Carbon Steel. Finish: Blue Zinc Plated RATINGS: Operating Temperature: +102°C. +216°F. Max.

Contextual Info: Doc No. TT4-EA-13149 Revision. 2 Product Standards MOS FET FM6L52020L FM6L52020L Silicon N-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y6 1.4

Contextual Info: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y1 1.4

Contextual Info: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6

Contextual Info: Doc No. TT4-EA-13148 Revision. 2 Product Standards MOS FET FL6L52030L FL6L52030L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y3 1.4 1.6

Contextual Info: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y4 1.4 1.6

Contextual Info: Doc No. TT4-EA-14570 Revision. 1 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14570 Revision. 2 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14543 Revision. 2 Product Standards MOS FET FC694309ER FC694309ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 1.5 V drive  Halogen-free / RoHS compliant

mtm861270

Abstract: MTM86127 mtm13127
Contextual Info: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features  Marking Symbol : MK 1.4 1.6  Low Drain-source On-state Resistance : RDS on typ = 80 m  (VGS = -4 V)

Contextual Info: Doc No. TT4-EA-14462 Revision. 3 Product Standards MOS FET SK8603160L SK8603160L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 16 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.3 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14216 Revision. 3 Product Standards MOS FET SK8603180L SK8603180L Silicon N-channel MOSFET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 18 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 6.7 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14213 Revision. 3 Product Standards MOS FET SK8603150L SK8603150L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 15 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 2.5 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14211 Revision. 4 Product Standards MOS FET SK8603190L SK8603190L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 19 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 10 m  (VGS = 4.5 V)