EA MARKING CODE Search Results

2sa198

Abstract: 2SC5344S 2SA1981S
Contextual Info: 2SA1981S Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S Ordering Information Type NO. Marking 2SA1981S Package Code SOT-23 EA : hFE rank Outline Dimensions

2SA1981SF

Abstract: Transistor 2SC5344SF
Contextual Info: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions

2SA1981SF

Abstract: 2SC5344SF
Contextual Info: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions

STA1298

Abstract: STC3265
Contextual Info: STA1298 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with STC3265 Ordering Information Type NO. Marking STA1298 Package Code SOT-23 EA : hFE rank Outline Dimensions

drcf124

Contextual Info: Doc No. TT4-EA-14094 Revision. 2 Product Standards Transistors with Built-in Resistor DRAF124X0L DRAF124X0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRCF124X DRA3124X in ML3 type package 0.6 3 • Features  Marking Symbol:

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED diode k77 K77 diode
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

Contextual Info: Doc No. TT4-EA-13149 Revision. 2 Product Standards MOS FET FM6L52020L FM6L52020L Silicon N-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y6 1.4

Contextual Info: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y1 1.4

Contextual Info: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6

14538

Contextual Info: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 30 5.9 6.15

Contextual Info: Doc No. TT4-EA-13148 Revision. 2 Product Standards MOS FET FL6L52030L FL6L52030L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y3 1.4 1.6

Contextual Info: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y4 1.4 1.6

Contextual Info: Doc No. TT4-EA-14570 Revision. 1 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14543 Revision. 2 Product Standards MOS FET FC694309ER FC694309ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 1.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14462 Revision. 3 Product Standards MOS FET SK8603160L SK8603160L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 16 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.3 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14216 Revision. 3 Product Standards MOS FET SK8603180L SK8603180L Silicon N-channel MOSFET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 18 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 6.7 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14213 Revision. 3 Product Standards MOS FET SK8603150L SK8603150L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 15 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 2.5 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14211 Revision. 4 Product Standards MOS FET SK8603190L SK8603190L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 19 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 10 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14480 Revision. 2 Product Standards MOS FET SK8603170L SK8603170L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 17 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.9 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14461 Revision. 3 Product Standards MOS FET SK8603140L SK8603140L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 14 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 1.8 m  (VGS = 4.5 V)

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

FES2J

Abstract: FES1J w5 marking MARKING w5 J4 marking code EA marking code MARKING U1
Contextual Info: Surface Mount Fast Recovery Rectifiers Part No. RS2A RS2B RS2D RS2G RS2J RS2K FRS2A FRS2B FRS2D FRS2G FRS2J FRS2K FRS2M RS3A RS3B RS3D RS3G RS3J RS3K FRS3A FRS3B FRS3D FRS3G FRS3J FRS3K FRS3M Marking Code RA RB RD RG RJ RK G1 G2 G3 G4 G5 G6 G7 RA RB RD RG

C505A

Abstract: C505CA
Contextual Info: Semiconductor Group Microcontrollers Errata Sheet July 16, 1998 / Release 1.1 Device: C505A C505CA Stepping Code / Marking: Package: AA P-MQFP-44 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence