Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    E8812SG Search Results

    SF Impression Pixel

    E8812SG Price and Stock

    Hitachi Ltd

    Hitachi Ltd HE8812SG

    Infrared Emitter 870nm Circular Top Mount 2-Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HE8812SG 33
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    E8812SG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Infrared Emitting Diode Description The H E8812SG is a GaAIAs double heterojunction structure 870 nm band light em itting diode. suitable for use as the light source in a wide range o f optical control and sensing equipment.


    OCR Scan     		E8812SG HE8812SG: HE8812SG PDF

    HL7801

    Abstract: HL7806
    Contextual Info: ยง2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).


    OCR Scan     		PDF