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    Hitachi Ltd

    Hitachi Ltd HE8812SG

    Infrared Emitter 870nm Circular Top Mount 2-Pin
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    E8812SG Datasheets Context Search

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    Contextual Info: Infrared Emitting Diode Description The H E8812SG is a GaAIAs double heterojunction structure 870 nm band light em itting diode. suitable for use as the light source in a wide range o f optical control and sensing equipment.


    OCR Scan     		e8812sghe8812sg PDF

    HL7801

    Abstract: HL7806
    Contextual Info: ยง2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).


    OCR Scan     		hl7801hl7806 PDF