FCD820
Abstract: FCD820C
Contextual Info: FCD820•FCD820C OPTICALLY-COUPLED ISOLATOR OPTOELECTRONICS PRODUCT GROUP G E N ER AL D E SC R IP TIO N - The FCD820 series of optoisolators combines a gallium arsenide infrared em itting diode and a silicon npn phototransistor in close proximity. Optical intercoupling provides a high degree of ac and dc isolation. A capability for
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fcd820fcd820ce55299coupld820 |
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4N27W
Abstract: 4N28 4N31 4N35 4N36 4N37 ic 4n35 4n33 and 4n35
Contextual Info: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0
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4n27w4n284n314n35+44n364n37ic 4n354n33 and 4n35
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FCD820D
Abstract: FCD820B FCD820 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A
Contextual Info: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>
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fcd810bfcd810cfcd810dfcd820b+8fcd820cfcd82tfcd820fcd820dfcd825afcd825dfcd830fcd830a
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transistor 45 f 122
Abstract: 4n33 and 4n35 4N35 C 547 transistor TRANSISTOR 547 transistor 551 547 TRANSISTOR 4N27W 4N28 4N31
Contextual Info: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0
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4n27wtransistor 45 f 1224n33 and 4n354n35+6c 547 transistortransistor 547transistor 551547 transistor4n284n31
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