E53-Q VOLTAGE UNIT Search Results

OMRON E5CN

Abstract: omron zen 10c1dr-d-v1 Omron SPEED sensor 12v m16 OMRON H5CX programming manual omron zen 10c1ar-a-v1 omron TS 101 DA analogue extension modules ZEN 10C1DR-D-V1 sv 120 230 liquids dual level relay manual omron e5cs Omron H7CR Catalog
Contextual Info: INDUSTRIAL COMPONENTS Product Selector 2004 / 2005 • Electromechanical relays • Timers • Counters • Programmable relays • Level and leakage controllers • Industrial switches • Pushbutton switches • Low voltage switch gear • Temperature controllers

omron e5a

Abstract: E5EJ-A2HB Omron Type E5AJ-A2HB E5EJ-A2HM MANUAL E5EJ-A2HB MANUAL E5AJ-A2HB E5EJ-A2HM IE5A E5A/EJ E5AJ-A2HM
Contextual Info: Temperature Controller IE5A/EJ Fuzzy Self-tuning Temperature Controller with Advanced PID 2-PID Control ie5aj ie5ej DIN-size: 96 x 96 mm (E5AJ), 48 x 96 mm (E5EJ) Fuzzy self-tuning continuously optimizes temperature control. Up to 4 setpoints, selectable by external volt-free

Contextual Info: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •

RN4610

Contextual Info: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •

RN4612

Abstract: sc-74 e5
Contextual Info: TOSHIBA RN4612 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4612 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm A N D DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1 .6 - 0 .1 •

RN4608

Contextual Info: TOSHIBA RN4608 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4608 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1.6 • • • • Including Two Devices in SM6 (Super Mini Type with 6 leads)

RN4603

Contextual Info: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •

RN4605

Contextual Info: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -

RN4609

Contextual Info: TOSHIBA RN4609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8-0.3 + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 (Super Mini Type with 6 leads)

33164

Abstract: SG34164
Contextual Info: LINFINITY- M ic ro e le c tro n ic s Inc. A Silicon G en eral SG33164/34164 C o m p an y MICROPOWER SENSING CIRCUIT DESCRIPTION FEATURES The SG33164 and the SG34164 are micropower undervoltage sensing circuits ideal for use in low power battery applications, in computer

Contextual Info: Pöä@E yj Tr ©^ t o [l ( P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " (0.508mm) Backside Contact: 3,OCX) À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

RN4602

Contextual Info: TOSHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4602 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8-0.3 + 0.2 1 .6 - 0 .1 Including Two Devices in SM6 (Super Mini Type with 6 leads)

2N2844

Abstract: 2N2607 UC410 2N2609 2N2842 2N2608 Junction-FET UC400 UC420
Contextual Info: -Æ litra n Dev/ces. Inc. P -C H A N N E L J U N C T I O N FE T CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .02cr 0.508mm Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

4034A

Abstract: rca 4039ae 4034AE CM4011AE CD4000AE CM4000 CM4000AE CM4001AE CM4002AE CM4011A
Contextual Info: Solidev Sem iconductors Integrated Circuits - Digital CMOS CM4000 Series CM OS Equivalent to R C A CD4000AE Series G E N E R A L D E S C R IP T IO N Com plem entary M O S circu its are norm ally made on an N-type substrate, w hich necessitates the use of a P-type well for N -channel devices

a1u transistor

Abstract: sed5031c
Contextual Info: S-M 0 S SYSTEMS INC IDE D | 7^35ciO,:5 DDDDSTD M | PF221-03 feMdS&f CMOS 12 BIT THERMAL HEAD DRIVER #Built in 12bit static shift register #12bit latch circuits #Output control circuits and built in 12bit driver •DESCRIPTION The SED5031Coc is a low power CMOS 12bit thermal head driver. It contains a 12bit high speed shift

Ultrasonic amplifier schematic circuit

Abstract: circuit diagram for simple IR receiver ultrasonic amplifier circuit diagram MRD821 MC3373 MC3373P envelope detector ic circuit diagram for simple IR transmitter high Frequency envelope detector 125 khz ultrasonic RECEIVER CIRCUIT
Contextual Info: MOTOROLA Rem ote Control A m plifier/D etector The MC3373 is intended for application in infrared remote controls. It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode to the tuning control system logic. • High Gain Pre-Amp

BSN3005

Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005 FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g DESCRIPTION gate s source

Contextual Info: <g> M O TO R O LA MC1741C Internally Compensated, High Performance Operational Amplifier OPERATIONAL AMPLIFIER T h e M C 1 7 4 1 C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external

CM150DY-12E

Abstract: VQE200 transistor FM E52 Gh737 BP107 Q026 ZMRN
Contextual Info: bHE D • TETMbSl 000b73b S7fl «PRX CM150DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 powerex inc CM150DY-12E Dual IGBTMOD E-Series Module

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JU L Y 94_ FEATURES * 60 Volt V,DS ^DS on - 0 ,3 3 fl Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive ABSOLUTE MAXIMUM RATINGS. PARAMETER

NDS9410 equivalent

Abstract: NDS9410
Contextual Info: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This

Contextual Info: PD‘91880 International I R Rectifier IRFP460A smpsmosfet HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V d ss 500V R d s (o n ) m a x 0.27£2 Id 20A Benefits • Low Gate Charge Qg results in Simple

Contextual Info: Digital Attenuator, 15.5 dB, 5 Bit DC-2 GHz Features ^ * * *July AT-280 ’93 SO-16 • Attenuation 0.5 dB Steps to 15.5 dB • Temperature Stability ± 0.15 dB from -40°C to +85°C Typical • Ultra Low DC Power Consumption • Low Intermodulation Products, IP3: 43 dBm

Contextual Info: g MOTOROLA M C3450 Quad MTTL Com patible Line Receivers The MC3450 features four MC75107 type active pullup line receivers with the addition of a common three-state strobe input. When the strobe input is at a logic zero, each receiver output state is determined by the differential