E4 SOT223 Search Results

CBVK741B019

Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

MMPQ2907

Abstract: SOIC-16
Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

SM-8 Package

Abstract: e4 sot223 NPN/PNP transistor sot223 ZHB6718 ZHB6718 TYPICAL APPLICATION ZHB6790 ZHB6792
Contextual Info: H-Bridge devices in SM-8 Package 4 3 6 B2 2 B4 B1 E2,E3 1 C3,C4 7 E1,E4 8 C1,C2 5 The SM-8, is an 8 lead version of the industry standard SOT223 package. The package and leads occupy an area of 6.7 x 7.3mm and with a maximum height of 1.7mm it is ideal for space critical applications.

e4 sot223

Contextual Info: SOT-223 MECHANICAL DATA mm. mils DIM. MIN. TYP MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1

IC 7403

Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

2N3904 SOT-23

Abstract: mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild
Contextual Info: 2N3904 MMBT3904 C E C B TO-92 SOT-23 E B Mark: 1A MMPQ3904 E1 PZT3904 B4 E4 B3 E3 B1 E1 B1 SOIC-16 C C4 C4 C3 C3 C2 C2 C1 E C B C1 SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to

zdt749

Abstract: 6075A ZDT6790 ZDT1049 SM-8 BIPOLAR TRANSISTOR
Contextual Info: Section 5: Bipolar Transistors S a tu r•ationTransistors up to Î 0 0 V o lts L o in Zetex has introduced the SM-8 surface mount package derived from the industry standard SOT223 outline. The SM-8 package features a unique lead fram e design which serves to increase the number of packaged com ponents,

Contextual Info: STN2NF10 N-CHANNEL 100V - 0.23Ω - 2A SOT223 STripFET II POWER MOSFET TYPE STN2NF10 • VDSS RDS on ID 100 V < 0.26 Ω 2A TYPICAL RDS(on) = 0.23 Ω 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique ”Single Feature Size ”

P008B DIODE

Contextual Info: STN3NF06L N-CHANNEL 60V - 0.07Ω - 3A SOT223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792

SM-8 BIPOLAR TRANSISTOR

Abstract: 4420 Transistor TP4030 ZHB6792 500mA H-bridge
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

ZHB6790

Abstract: 500mA H-bridge NPN/PNP transistor sot223 partmarking 6 C BR27 npn-pnp dual SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

h6718

Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

ZHB6790

Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIM INARY DATA SH EET ISS U E B JU LY 1997 FEATURES * Compact package * * * * Low on state losses Low drive requirem ents Operates up to 40V supply 2 A m p continuous rating ^ L J SM-8 8 LEAD SOT223 PARTMARKING DETAIL - ZHB6790

N3NE06

Abstract: P008B SGS-Thomson e4 sot223 SGS-Thomson mosfet k 2638
Contextual Info: STN3NE06 N - CHANNEL ENHANCEMENT MODE ”EXTREMELY HIGH DENSITY” POWER MOSFET TARGET DATA TYPE V DSS R DS on ID ST N3NE06 60 V < 0.13 Ω 3 A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

P008B

Abstract: STN3NE06 SGS-Thomson mosfet
Contextual Info: STN3NE06 N - CHANNEL ENHANCEMENT MODE "EXTREMELY HIGH DENSITY" POWER MOSFET TARGET DATA TYPE V DSS R DS on ID STN3NE06 60 V < 0.12 Ω 3A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

ZDS1009

Abstract: PCF 7900 bq2954 S1009 DV2954S1H FMMT451 FZT789A high side current mirror sensing
Contextual Info: Application Note 32 Issue 1 January 2000 Features and Applications of the ZDS1009 Current Mirror/Level Translator Neil Chadderton Introduction The ZDS1009 current mirror has been developed specifically for high side, current sense plus level translation applications and as such will find a

STZTA42

Abstract: STZTA92
Contextual Info: STZTA92 MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

STZTA42

Abstract: STZTA92
Contextual Info: STZTA92 MEDIUM POWER AMPLIFIER ADVANCE DATA • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

P008B

Abstract: PNP Epitaxial Silicon Transistor sot223 STZTA42 STZTA92
Contextual Info: STZTA42 MEDIUM POWER AMPLIFIER ADVANCE DATA • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER