E4 SOT Search Results

SMF5V0A

Abstract: vbus054 VESD08-02V VCUT07B1-HD1 LLP1010 vcut0714 VBUS053CZ-HAF LLP2513 VBUS05L1 SMF DO-219AB
Contextual Info: ESD Protection Diodes & EMI-Filter Release: 12. July 2012 e4 e4 e4 e3 e4 e4 e4 e4 e4 e3 e3 RoHS RoHS RoHS RoHS RoHS RoHS RoHS RoHS RoHS RoHS RoHS COMPLIANT COMPLIANT COMPLIANT COMPLIANT COMPLIANT COMPLIANT COMPLIANT COMPLIANT COMPLIANT COMPLIANT COMPLIANT

FAH 37 datasheet

Abstract: FAH 37 LLP1010-5L VBUS052CD-FAH GL05T SMF DO-219AB SOT-23 VESD03A1C-02Z VBUS051BD-HD1 VBUS053AZ-HAF LLP1006-2L
Contextual Info: ESD Protection Diodes & EMI-Filter Release: 26. October 2010 e3 e4 e4 e3 e4 e4 e3 e4 e4 RoHS RoHS RoHS RoHS RoHS RoHS RoHS RoHS RoHS GREEN GREEN GREEN GREEN GREEN GREEN GREEN GREEN COMPLIANT COMPLIANT 5-2008 COMPLIANT (5-2008) COMPLIANT (5-2008) COMPLIANT

Contextual Info: Package outline Leadless surface-mounted package; plastic cap; 18 terminations ZD2 10x e3 (2×) ZE2 (12×) e4 (2×) 1 e (2×) 2 e1 (2×) e2 (2×) 3 4 ZD1 (10×) e3 (2×) 5 SOT796A Z (7×) Z3 6 ZE1 (12×) 18 Z4 Z6 (48×) 7 e1 (4×) 17 Z2 8 16 9 e4 (2×)

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHN203KPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.125 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * E4

CHN203KGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHN203KGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.125 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * E4

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

8XC54

Abstract: 80C51 80C54 87C54 PCON AN87C54
Contextual Info: INTEGRATED CIRCUITS 80C54/87C54 CMOS single-chip 8-bit microcontrollers Preliminary specification 1995 Jan 31 IC20 hilips Semiconductors PHILIPS PH ILIPS • 711002b 0007445 E4Ô This Material Copyrighted By Its Respective Manufacturer Prelim inary specification

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

Contextual Info: DMA26401 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: E4  Basic Part Number

IR 529

Contextual Info: M À if iìik à É E4 J> EVERLIGHT ELECTRONICS -.;v : 3415703 □□□□□12 b SPECIAL LED INDICATOR LAMPS , . . • DOUBLE C H IPS LED LAMPS SW rertl/ I TEST CONDITION FOR EACH PARAMETER: Parameter: Reverse Voltage Reverse Curreni Forward Voltage Luminous Intensity

e4 sot223

Contextual Info: SOT-223 MECHANICAL DATA mm. mils DIM. MIN. TYP MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1

LTI-SASF54GT

Abstract: C0603X5R BAV99E6327 ece r43 PI10D po23d R96-R99 PI12D PO21D BAV99-E6327
Contextual Info: 78P2352-DB STM1e/E4/OC3 Demo Board DEMO BOARD MANUAL AUGUST 2005 INTRODUCTION FEATURES This manual will explain the design and operation of the 78P2352-DB demo board Board rev. D2352T8C . The 78P2352 is TERIDIAN’s latest dual channel Line Interface Unit (LIU) for 155Mbit/s

sot890

Abstract: 14X14
Contextual Info: Package outline Philips Semiconductors VFBGA353S: plastic very thin fine-pitch ball grid array package; 353 balls; top 152 lands; stackable; body 14 x 14 x 0.6 mm B D e4 D1 2 4 1 3 6 8 5 ∅v ∅w b e3 ball/land A1 index area 7 10 9 12 11 SOT890-1 14 13 16

74LV377

Abstract: 74LV377D 74LV377DB 74LV377N
Contextual Info: NAPC/PHILIPS SEIHCOND b3E ]> • bbS3^E4 Q 0fl3fllb Philips Semiconductors SEE « S I C 3 Objective Specification Octal D-type flip-flop with data enable; positiveedge trigger FEATURES • • • • • • • • • • • GENERAL DESCRIPTION The 74LV377 is a low-voltage

Contextual Info: Package outline VFBGA469S: plastic very thin fine-pitch ball grid array package; 469 balls; top 152 lands; stackable; body 14 x 14 x 0.6 mm D e4 ball/land A1 index area 1 2 3 4 6 5 7 8 B D1 e3 9 10 11 SOT990-1 ∅v ∅w b1 12 13 14 15 16 18 20 17 19 C A B

SOT796A

Abstract: sot796
Contextual Info: PDF: 2003 Dec 09 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 18 terminations ZD2 10x e3 (2×) ZE2 (12×) 1 e4 (2×) e (2×) 2 e2 (2×) e1 (2×) 3 4 ZD1 (10×) e3 (2×) 5 SOT796A Z (7×) Z3 6 ZE1 (12×) Z4 Z6 (48×)

Contextual Info: FFB2907A / FMB2907A / MMPQ2907A FMB2907A FFB2907A E2 C2 B2 E1 C1 SC70-6 Mark: .2F MMPQ2907A C1 pin #1 E1 B1 E1 C2 pin #1 B1 E2 B2 E3 E4 B4 B2 SuperSOTä-6 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can

HBCC16

Abstract: sot639
Contextual Info: PDF: 2000 Aug 30 Philips Semiconductors Package outline HBCC16: plastic, heatsink bottom chip carrier; 16 terminals; body 3 x 3 x 0.65 mm SOT639-1 x B D b1 w M w M Pin A1 index area b E b3 w M b2 w M detail X x C A e1 B e C y v A e2 E1 e4 1 16 D1 A1 X e3 A2

EAS-3P123A

Abstract: WM-65A103 WM-60AY memory cash WM-54BT A18 sot A9 SOT-23 MIC29152BU nel d3 tda1308
Contextual Info: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page A 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: 11: 12: 13: 14: 15: uforCE.SCH E4.SCH CLK.SCH MEMORY.SCH PCMCIA.SCH MISC.SCH LCD.SCH AUDIC.SCH AUDPORT.SCH VCC3.SCH VCC5.SCH

WM-60AY

Abstract: panasonic WM-54BT SA5 SOT23 WM-65A103 2P20 WM-54BT EAS-2P20A MIC29152BU pwm sa8 sc400
Contextual Info: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page A 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: 11: 12: 13: 14: 15: uforCE.SCH E4.SCH CLK.SCH MEMORY.SCH PCMCIA.SCH MISC.SCH LCD.SCH AUDIC.SCH AUDPORT.SCH VCC3.SCH VCC5.SCH

CBVK741B019

Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

Contextual Info: Package outline VFBGA373S: plastic very thin fine-pitch ball grid array package; 373 balls; top 120 lands; stackable; body 14 x 14 x 0.65 mm D e4 e3 ball/land A1 index area 1 2 4 3 5 6 7 B D1 8 9 SOT915-2 ∅v ∅w b1 10 11 12 13 14 16 15 M M C A B C A 17

sot564

Contextual Info: PDF: 1999 Sep 10 Philips Semiconductors Package outline HBCC24: plastic, heatsink bottom chip carrier; 24 terminals; body 4 x 4 x 0.65 mm SOT564-1 x B D pin 1 index area b1 w M w M b b3 E w M b2 w M detail X x C A e1 B e y v A C E1 e4 e2 1 24 A1 X D1 A2 e3