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    E3N1 Search Results

    E3N1 Datasheets (10)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge NCE3N170T
    		NCEPOWER NCE3N170T is an N-channel enhancement mode power MOSFET with 1700 V drain-source voltage, 6 ohm RDS(ON), 2.9 A continuous drain current, and 33 nC gate charge, suitable for high-voltage switching applications. Original PDF
    badge NCE3N150D
    		NCEPOWER NCE3N150D is an N-channel enhancement mode power MOSFET with 1500V drain-source voltage, 3A continuous drain current, 5.5Ω typical RDS(ON), and 32nC gate charge, suitable for high-voltage switching applications. Original PDF
    badge NCE3N150T
    		NCEPOWER NCE3N150T is a 1500V, 3A N-channel enhancement mode power MOSFET in a TO-247 package with a typical RDS(ON) of 5.5 ohms and gate charge of 32nC, suited for high-voltage switching applications. Original PDF
    badge NCE3N150PF
    		NCEPOWER NCE3N150PF is a 1500V, 3A N-channel enhancement mode power MOSFET in TO-3PF package with RDS(ON) of 5.5 ohms, Qg of 32nC, and 100% avalanche tested capability. Original PDF
    badge NCE3N150F
    		NCEPOWER NCE3N150F is an N-channel enhancement mode power MOSFET with 1500 V drain-source voltage, 3 A continuous drain current, 5.5 ohm typical RDS(ON), and 32 nC gate charge, housed in a TO-220F package. Original PDF
    badge NCE3N150
    		NCEPOWER NCE3N150 is an N-channel enhancement mode power MOSFET with 1500 V drain-source voltage, 3 A continuous drain current, 5.5 ohm typical RDS(ON), and 32 nC gate charge, housed in a TO-220 package. Original PDF
    badge NCE3N170D
    		NCEPOWER NCE3N170D is a 1700V, 2.9A N-channel enhancement mode power MOSFET in TO-263 package with RDS(ON) of 6 ohms, Qg of 33 nC, and features high-speed switching, low gate charge, and 100% avalanche testing. Original PDF
    badge NCE3N170F
    		NCEPOWER NCE3N170F is a 1700V, 2.9A N-channel enhancement mode power MOSFET in TO-220F package with RDS(ON) of 6 ohms, Qg of 33nC, and 100% avalanche tested capability for high voltage switching applications. Original PDF
    badge NCE3N170
    		NCEPOWER NCE3N170 is an N-channel enhancement mode power MOSFET with 1700 V drain-source voltage, 6 ohm RDS(ON), 2.9 A continuous drain current, and 33 nC gate charge, suitable for high-voltage switching applications. Original PDF
    badge NCE3N170PF
    		NCEPOWER NCE3N170PF is a 1700V, 2.9A N-channel enhancement mode power MOSFET in TO-3PF package with 6 ohm typical RDS(ON), 33nC gate charge, and 100% avalanche tested capability for high voltage switching applications. Original PDF
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    ROHM Semiconductor SMLD12E3N1WT86

    LED BLUE-GREEN DIFFUSED 1608 SMD
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    Avnet Asia SMLD12E3N1WT86 24 Weeks 3,000
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    TE Connectivity 36401E3N1ATDF

    FIXED IND 3.1NH 380MA 450MOHM SM
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    Avnet Abacus 36401E3N1ATDF 1,000
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    OMRON Industrial Automation WLD18RP60LE3N10M

    SWITCH SNAP ACTION SLD TOP
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    DigiKey WLD18RP60LE3N10M Bulk 1
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    RS WLD18RP60LE3N10M Bulk 1
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    Master Electronics WLD18RP60LE3N10M
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    OMRON Industrial Automation WLGCL-139LE3-N-10M

    SWITCH LIMIT
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    OMRON Corporation WLD18RP60LE3N10M

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    E3N1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D1818

    Abstract: E3N1
    Contextual Info: THIS COPY IS PR OVIDED ON A RE ST RI CT ED BASIS AND IS NOT TO BE USED IN ANY WAY DE TR IM EN TA L TO THE INTERESTS OF PA NDUIT CORP. PART NUMBER TAB S I Z E PREFIX PKG -c D18-188 -M -c * D 1 4 - 188 -M -c D 1 8- 187 -M -c * D 1 4 - 187 -M .187 4 .8 .187


    OCR Scan     		D18-188 E78522 LR31212 E78522 A41305 D1818 E3N1 PDF