E3N1 Search Results
E3N1 Datasheets (10)
NCEPOWER
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
NCE3N150D
|
NCEPOWER | NCE3N150D is an N-channel enhancement mode power MOSFET with 1500V drain-source voltage, 3A continuous drain current, 5.5Ω typical RDS(ON), and 32nC gate charge, suitable for high-voltage switching applications. | Original | ||||
NCE3N170T
|
NCEPOWER | NCE3N170T is an N-channel enhancement mode power MOSFET with 1700 V drain-source voltage, 6 ohm RDS(ON), 2.9 A continuous drain current, and 33 nC gate charge, suitable for high-voltage switching applications. | Original | ||||
NCE3N150PF
|
NCEPOWER | NCE3N150PF is a 1500V, 3A N-channel enhancement mode power MOSFET in TO-3PF package with RDS(ON) of 5.5 ohms, Qg of 32nC, and 100% avalanche tested capability. | Original | ||||
NCE3N150T
|
NCEPOWER | NCE3N150T is a 1500V, 3A N-channel enhancement mode power MOSFET in a TO-247 package with a typical RDS(ON) of 5.5 ohms and gate charge of 32nC, suited for high-voltage switching applications. | Original | ||||
NCE3N150F
|
NCEPOWER | NCE3N150F is an N-channel enhancement mode power MOSFET with 1500 V drain-source voltage, 3 A continuous drain current, 5.5 ohm typical RDS(ON), and 32 nC gate charge, housed in a TO-220F package. | Original | ||||
NCE3N170D
|
NCEPOWER | NCE3N170D is a 1700V, 2.9A N-channel enhancement mode power MOSFET in TO-263 package with RDS(ON) of 6 ohms, Qg of 33 nC, and features high-speed switching, low gate charge, and 100% avalanche testing. | Original | ||||
NCE3N150
|
NCEPOWER | NCE3N150 is an N-channel enhancement mode power MOSFET with 1500 V drain-source voltage, 3 A continuous drain current, 5.5 ohm typical RDS(ON), and 32 nC gate charge, housed in a TO-220 package. | Original | ||||
NCE3N170
|
NCEPOWER | NCE3N170 is an N-channel enhancement mode power MOSFET with 1700 V drain-source voltage, 6 ohm RDS(ON), 2.9 A continuous drain current, and 33 nC gate charge, suitable for high-voltage switching applications. | Original | ||||
NCE3N170F
|
NCEPOWER | NCE3N170F is a 1700V, 2.9A N-channel enhancement mode power MOSFET in TO-220F package with RDS(ON) of 6 ohms, Qg of 33nC, and 100% avalanche tested capability for high voltage switching applications. | Original | ||||
NCE3N170PF
|
NCEPOWER | NCE3N170PF is a 1700V, 2.9A N-channel enhancement mode power MOSFET in TO-3PF package with 6 ohm typical RDS(ON), 33nC gate charge, and 100% avalanche tested capability for high voltage switching applications. | Original |
E3N1 Price and Stock
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TE Connectivity 36401E3N1ATDFThin Film Inductor, 3.1 nH, 450 Milliohm, ? 0.2nH, 6 GHz, 380 mA, 0402 [1005 Metric] - Tape and Reel (Alt: 5-1624108-3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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36401E3N1ATDF | Tape & Reel | 2,000 |
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36401E3N1ATDF | 1,000 |
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Lumberg Automation GDME 3N-11 SCREW M3X40Sensor Cables / Actuator Cables |
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GDME 3N-11 SCREW M3X40 | 290 |
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ROHM Semiconductor SMLD12E3N1WT86Single Color LEDs Blue/Grn 496nm 0603; 85mcd |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMLD12E3N1WT86 | 241 |
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SMLD12E3N1WT86 | Tape & Reel | 261 | 100 |
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| SMLD12E3N1WT86 | Cut Tape | 261 | 5 |
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SMLD12E3N1WT86 | 1 |
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SMLD12E3N1WT86 | 24 Weeks | 3,000 |
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SMLD12E3N1WT86 | 14 Weeks | 3,000 |
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SiTime Corporation SiT5021AI-2DE-33N-156.250000XTCXO Oscillators 156.25MHz 3.3V 5ppm -40C +85C |
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SiT5021AI-2DE-33N-156.250000X |
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ROHM Semiconductor SMLD12E3N1WT861Single Color LEDs LED, Surface Mount, InGaN, Blue-Green, 2.9V, 20mA, 0603 (1608 Metric) |
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SMLD12E3N1WT861 |
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