E323585 Search Results

Contextual Info: < Dual-In-Line Package Intelligent Power Module > PSS35S92F6-AG PSS35S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  600V / 35A CSTBT  N-side IGBT open emitter  Built-in bootstrap diodes with current limiting resistor

019k

Contextual Info: MITSUBISHI IGBT MODULES CM200DX-24S HIGH POWER SWITCHING USE INSULATED TYPE - 6th Generation NX series - CM200DX-24S Collector current IC .….… 200A Collector-emitter voltage VCES .… 1 2 0 0 V Maximum junction temperature T jmax .

Contextual Info: < IGBT MODULES > CM100RX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 100A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 450A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

TC56

Abstract: cm300dx-12a IC300
Contextual Info: MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM300DX-12A Collector current IC .….… 300A Collector-emitter voltage VCES .… 600V Maximum junction temperature T jmax .

CM900duc-24nf

Contextual Info: MITSUBISHI IGBT MODULES CM900DUC-24NF HIGH POWER SWITCHING USE INSULATED TYPE - MPD series using 5th Generation IGBT and FWDi - CM900DUC-24NF ●IC ….………………….…. 900 A ●V CES …………….….…. 1200 V ●Flat base Type ●Copper non-plating base plate

IC400

Contextual Info: < IGBT MODULES > CM400DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 400A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: MITSUBISHI IGBT MODULES CM300DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM300DX-24A Collector current IC .….… 300A Collector-emitter voltage VCES .… 1 2 0 0 V Maximum junction temperature T jmax .

Contextual Info: < IGBT MODULES > CM75TX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 75A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM100DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 100A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM100TX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 100A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 3 5 0 A* Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: MITSUBISHI IGBT MODULES CM1400DUC-24NF HIGH POWER SWITCHING USE INSULATED TYPE - MPD series using 5th Generation IGBT and FWDi - I C ….………………….…. 1400 A V CES …………….….…. 1200 V Flat base Type Copper non-plating base plate

Contextual Info: PRELIMINARY < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 100A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

pss20s92

Contextual Info: < Dual-In-Line Package Intelligent Power Module > PSS20S92F6-AG PSS20S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  600V / 20A CSTBT  N-side IGBT open emitter  Built-in bootstrap diodes with current limiting resistor

Contextual Info: < IGBT MODULES > CM600DXL-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 600A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 7 9 0 A* Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 9 0 0 A* Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 75A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM300DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 300A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: PRELIMINARY < IGBT MODULES > CM150RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 150A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 150A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM75RX-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 75A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 100A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .