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E34-00A
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Cherry
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Snap Action, Limit Switches, Switches, SWITCH SNAP SPDT 15A QC TERM |
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E34-00A
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Cherry Semiconductor
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SNAP ACTION SWITCH SPDT BUTTON 15A 250VAC |
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119.4KB |
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E34-00A
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Cherry
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - SWITCH, MINIATURE LIGHT AND STANDARD FORCE, QC TERMINAL |
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84.22KB |
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E34-00AX
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Cherry Semiconductor
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SNAP ACTION SWITCH SPDT BUTTON 15A 250VAC |
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119.4KB |
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E34-00H
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Cherry Semiconductor
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SNAP ACTION SWITCH SPDT BUTTON 15A 250VAC |
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119.4KB |
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E34-00HX
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Cherry Semiconductor
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SNAP ACTION SWITCH SPDT BUTTON 15A 250VAC |
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119.4KB |
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E34-00K
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Cherry
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Snap Action, Limit Switches, Switches, SWITCH ROLLER SPDT 15A QC TERM |
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E34-00K
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Cherry Semiconductor
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SNAP ACTION SWITCH SPDT ROLLER 15A 250VAC |
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119.4KB |
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NCE3400XY
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NCEPOWER
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NCE3400XY is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.1A continuous drain current, and low on-resistance of 33mΩ at 2.5V gate drive, suitable for switching and power management applications in SOT23-3L surface mount package. |
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NCE3401
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NCEPOWER
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NCE3401 is a -30V, -4.2A channel enhancement mode power MOSFET with 48mΩ typical RDS(ON) at VGS=-10V, suitable for load switch and PWM applications in surface mount SOT-23 package. |
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NCE3400X
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NCEPOWER
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NCE3400X is a channel enhancement mode power MOSFET with 30V drain-source voltage, 5.1A continuous drain current, and low on-resistance of less than 55mΩ at 2.5V gate voltage, suitable for switching applications and load management in surface mount design. |
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NCE3401E
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NCEPOWER
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NCE3401E is a -30V, -4.4A channel enhancement mode power MOSFET with low RDS(ON) of less than 85mΩ at VGS=-2.5V, suitable for load switch and PWM applications in surface mount package. |
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NCE3401A
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 85mΩ at -2.5V gate-source voltage, suitable for load switch and PWM applications in SOT-23 package. |
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NCE3407
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.6A continuous drain current, and low on-resistance of less than 95mΩ at VGS=-4.5V, available in SOT-23 surface mount package. |
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NCE3406AN
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NCEPOWER
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NCE3406AN is a 30V, 6A N-channel enhancement mode power MOSFET with low RDS(ON) of less than 55mΩ at VGS=2.5V, suitable for battery protection and switching applications in a surface mount SOT23-6L package. |
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NCE3400A
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NCEPOWER
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NCE3400A N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 40mΩ at 10V gate-source voltage, available in SOT-23 surface mount package. |
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NCE3404Y
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NCEPOWER
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NCE3404Y is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 28mΩ at VGS=10V, suitable for load switch and PWM applications in a SOT-23-3L surface mount package. |
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NCE3402
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NCEPOWER
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NCE3402 N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 3A continuous drain current, RDS(ON) less than 75mΩ at VGS=2.5V, and low gate charge, suitable for battery protection and switching applications in SOT-23 package. |
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NCE3401Y
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET NCE3401Y with -30V drain-source voltage, -4.2A continuous drain current, and low RDS(ON) down to 55mΩ at VGS=-10V, suitable for load switch and PWM applications in SOT-23-3L package. |
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NCE3400
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NCEPOWER
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NCE3400 N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 5.8A continuous drain current, and low on-resistance of 35mΩ at 10V gate-source voltage, suitable for switching applications. |
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NCE3400XY
