E3 MMIC Search Results

mmic e3

Abstract: dg s22
Contextual Info: e3 Stanford Microdevices Product Description SNA-300 Stanford Microdevices' SNA-300 is a GaAs monolithic broad­ band amplifier MMIC in die form. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency

mmic e3

Abstract: nitride MMIC limiter 1987 Celeritek DC-10
Contextual Info: 1974503 CELERITEK 90D 00029 D CELERITEK ^0 "d É J 1^74503 OQQOQE^ | CMM-B GaRs MMIC DC-10 GHz Limiter P r e l i m i n a r y D a t a S h e e t - Rpril 1987 FERTURES □ Small Size 350 x 3?5 microns B L o w Insertion Loss Q Hard Limiting E3 Rdjustable Output Power

"digital phase shifter"

Abstract: 160 e7 mmic e3 mmic s5 MAPCGM0004-DIE P180 macom phase shifter
Contextual Info: RO-P-DS-3051 - - MAPCGM0004-DIE 5-Bit Digital Phase Shifter 6.0-18.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 6.0-18.0 GHz GaAs MMIC Phase 5 Bit Digital Phase Shifter 6.0 -18.0 GHz Operation 360º Coverage, LSB = 11.2º TTL Control Inputs Self-Aligned MSAG MESFET Process

CDH60

Abstract: NEMJ10006 MMIC code D PIN diode 12 GHz 60 GHz PIN diode NEMJ10003 diode PIN 60 Ghz mmic j 60 GHz PIN diode gaas E3 MMIC
Contextual Info: □111745 0000345 3 BME D HICRONETICS INC IMRÔ ff" Single Pole Three Throw Z • T 'S f '/ / LOW BAND 10 MHz to 1000 MHz (GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) 'D E a c e t g n f i z a •GaAs, MMIC and PIN diode technology ♦High reliability

Contextual Info: SILICON MMIC FREQUENCY CONVERTER FEATURES_ UPC2721GR UPC2722GR INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION UP TO 2.5 GHz • INTERNAL BALANCED AMPLIFIER FOR VCO OSC Coupling Vcc OSC (Feedback) osc (Bypass) • SINGLE ENDED PUSH-PULL IF AMPLIFIER

WCDMA900

Abstract: mmic e3 BLM6G22-30G HSOP16
Contextual Info: BLM6G10-30; BLM6G10-30G W-CDMA 900 MHz - 1000 MHz power MMIC Rev. 01 — 28 August 2009 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 920 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead

mmic e3

Abstract: 4350B BLM6G22-30 BLM6G22-30G HSOP16
Contextual Info: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 01 — 3 March 2008 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead

mmic e3

Abstract: 4350B BLM6G22-30 BLM6G22-30G HSOP16 GP328
Contextual Info: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 03 — 21 November 2008 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead

D2575

Contextual Info: Data Sheet W L V A iy & tm ^ H M K U IU IL Ku-Band DBS MMIC Downconverter j Preliminary Your GaAs 1C Source Rev 2 FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated Monolithic Downconverter Surface Mount Package 7 dB Noise Figure 35 dB Conversion Gain Single + 6 Volt Supply

mmic e3

Abstract: 4350B BLM6G22-30 BLM6G22-30G HSOP16 sot8221po GP328 atc 174
Contextual Info: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 4 — 7 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead

Contextual Info: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 4 — 7 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead

Contextual Info: BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead

BLMG1

Abstract: mmic e3 4350B HSOP16 BLM6G10-30G
Contextual Info: BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead

E3 MMIC

Contextual Info: Coaxial GaAs MMIC Switches 0.5 - 18.0 GHz MLM 6570-000D Series V3.00 Features ● ● ● ● ● Broad Frequency Ranges Fast Switching Speed Low Video Generation Low Current Consumption TTL Compatible Description M/A-COM offers a range of GaAs MMIC switches using

MMIC code D

Abstract: 10 GHz pin diode 60 GHz PIN diode gaas E5 MMIC iso/8879-1986/gp131 diode
Contextual Info: MICRONETICS INC blll7M5 Q Q O G 3 4 cl Q EHMRO 34E D 'T - S > 'U A - T ^ t- T J b Single Pole Five Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) a D E SeR IB -T I •GaAs, MMIC and PIN diode technology •High reliability

Contextual Info: an A M P com pany Coaxial GaAs MMIC Switches 0.5 -18.0 GHz MLM 6570-000D Series V3.00 Features • • • • • Broad Frequency Ranges Fast Switching Speed Low Video Generation Low Current Consumption TTL Compatible Description M/A-COM offers a range of GaAs MMIC switches using

Contextual Info: 40KOM COAXIAL GaAs MMIC SWITCHES MLM 6580-000D Series NON REFLECTIVE GaAs MMIC SWITCHES WITH TTL COMPATIBLE DRIVERS 0.5 TO 18.0 GHz EATURES Broad Frequency Ranges Fast Switching Speed Low Video Generation Low Current Consumption TTL Compatible DESCRIPTION

mmic e3

Abstract: ds622
Contextual Info: COAXIAL GaAs MMIC SW ITCHES MLM 6570-000D Series REFLECTIVE GaAs MMIC SW ITCHES W ITH TTL COMPATIBLE DRIVERS 0.5 TO 18.0 GHz FEATURES ♦ Broad Frequency Ranges ♦ Fast Switching Speed ♦ Low Video Generation ♦ Low Current Consumption ♦ TTL Compatible

Contextual Info: Æfacm m an A M P com pany Coaxial GaAs MMIC Switches 0.5 - 1 8.0 GHz MLM 6570-000D Series V3.00 Features • B road F re q u en cy R anges • Fast S w itching S p eed • Low V id eo G en eratio n • I.ovv C u rren t C o n su m p tio n • TFL C o m p atib le

Contextual Info: Stanford Microdevices SSW-108 Product Description Stanford M icrodevices’ SSW -108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-4 GHz High Isolation G a As MMIC SPDT Switch

Contextual Info: •I.1* GaAs MMIC ABSORPTIVE VVA MODEL AT-200 DC - 5 G H z Low Insertion Loss, 1.2 dB Typical Fast Switching Speed, 4 ns Typical Ultra Low DC Power Consumption Outstanding Flatness Guaranteed Specifications* From -55°C to +85°C Frequency Range Insertion Loss

Contextual Info: Data Sheet E m h D v/ ^ I 4 G I Y our G âA s IC C AWT0903X TX POWER MMIC S ^ - Advanced Product Information S o u rc e Rev 4 900 MHz Band ETACS GaAs Power Amplifier IC DESCRIPTION The AWT0903X is a monolithic Power Amplifier suited for ETACS cellular telephone applications.

3F1 SMD Transistor

Abstract: 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek CCS1933 F7104 smd transistor fh
Contextual Info: CCS1933 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features ❏ High Gain ≈ 35 dB ❏ +33 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2162 Applications

TRANSISTOR C-111

Abstract: ISL55012 ISL55012IEZ-T7 ISL55013 ISL55014 ISL55015 TB347 MO-203-AB
Contextual Info: ISL55012 Data Sheet August 25, 2010 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55012 is a high performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for