E3 MARKING Search Results

Contextual Info: SA2B-E3, SA2D-E3, SA2G-E3, SA2J-E3, SA2K-E3, SA2M-E3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction

DIODE B140

Contextual Info: B120-E3, B130-E3, B140-E3, B150-E3, B160-E3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES • Power pack • Glass passivated pallet chip junction • Ultrafast recovery time • Low switching losses, high efficiency

HDB3 matlab

Abstract: block diagram prbs generator in matlab matlab pn sequence generator HP54502A
Contextual Info: DART Device Advanced E3/DS3 Receiver/Transmitter TXC-02030 FEATURES DESCRIPTION • Single LIU for E3 and DS3 The Dual-market Advanced E3/DS3 Receiver/Transmitter DART device performs the receive and transmit line interface functions required for transmission of E3

Contextual Info: V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB

Contextual Info: VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB

Contextual Info: VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A FEATURES TMBS TO-220AB ITO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses

Contextual Info: VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

mll34 footprint

Abstract: SOD80 footprint 1N4099UR DO-213AA 1N4099 1N4135UR 1N4614UR 1N4627UR MLL4099 MLL4135
Contextual Info: 1N4099UR thru 1N4135UR, e3 or MLL4099 thru MLL4135, e3 and 1N4614UR thru 1N4627UR, e3 (or MLL4614 thru MLL4627, e3) SCOTTSDALE DIVISION GLASS SURFACE MOUNT 0.5 WATT ZENERS APPEARANCE The 1N4099UR thru 1N4135UR and 1N4614UR thru 1N4627UR series of 0.5 watt glass surface mount DO-213AA Zener voltage regulators provides

Contextual Info: V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: CX28342/3/4/6/8 Dual/Triple/Quad/Hex/Octal-Enhanced DS3/E3 Framer Distinguishing Features ! The CX28342/3/4/6/8 provides Dual, Triple, Quad, Hex, and Octal DS3/E3 framers designed to support DS3-M13, DS3-C-bit parity, E3-G.751, and E3-G.832 transmission formats.