E2P 25 Search Results

XL93C56

Contextual Info: MICROELECTRONICS Parallel E2 Memory Products ExaKm e* h £* PARALLEL E2PROMS FAMILIES For detailed applications information, please reference the application notes in Section 4: Using EXEL’s Serial E2P R O M s. 4-5 Common E2 Questions Answered. 4-9

Contextual Info: //MEMORY M em ory size bit Memory Line-up Package ' jjp ./>•%• /)❖ o ' rfS " <# <§' <f$ Page e2p r o m - Serial 2-wire — 25 -S-24C Series- Serial 3-wire -o-o- S-93C Series- -0 -0 - — 26 A M > — 26 -Small Package 1.8V Read/Write

28HC191

Abstract: AT28HC191-45PI
Contextual Info: AT28HC191/L Features • • • • • • • • • • Fast Access Time - 35ns Low Power Dissipation 100 |iA Standby Current AT28HC191L 80 mA Active Current E2p r o m Technology -10 0 % Reprogrammable Direct Replacement for Bipolar PROMs Reprogrammable 1000 times

Contextual Info: S IE M E N S Nonvolatile Memory 2-Kbit E2PROM with I2C Bus and 1 K Write Protection S D A 3526-1 Preliminary Data MOS IC Features • W ord-organized programmable nonvolatile memory in n-channel floating-gate technology E2P R O M • 256 x 8 bit organization

Contextual Info: S IE M E N S Nonvolatile Memory 2-Kbit E2PROM with I2C Bus SD A 2526-2 Preliminary Data MOS 1C Features • W ord-organized programmable nonvolatile memory in n-channel floating-gate techno­ logy E2P R O M • 256 x 8 bit organization • Supply voltage 5 V

S-29220AFJA-TB

Abstract: s29130afjatb S-2913
Contextual Info: S-29XX0A Series 3-WIRE CMOS SERIAL E’PROM Th e S -2 9 X X 0 A Series is high speed, low power 1 K/2K/4K-bit E2P R O M with a wide operating voltage range. They are organized as 64-w ord x 16-bit, 128-word x 16-bit and 256-w ord x 16-bit, respectively. Each is capable of sequential

AL6001

Contextual Info: í w # d lld 'IIIU IV Ib Q N ^ 7 # . G A L 6 0 0 1 S RfflD [S©ll[Lll OT R!]D©i E2P R 0 M CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNOLOGY — Instantly reconfigurable logic — Instantly reprogrammable cells — Guaranteed 100% yields

Contextual Info: E2P H <S6-27-32 O K I electronic components OCMS2D6PP SERIES_ Power Saving Dial Pulse SOP Type Optical MOS Relay For AC/DC Load GENERAL DESCRIPTION The (X :\tS2 bDP series is a fam ily of optical MOS relays for A C / DC load. The in p u t p o rtio n is an

Contextual Info: CAT28C17AI CAT28C17AI - Industrial Temperature 2K x 8 BIT CMOS E2PROM DESCRIPTION FEATURES T h e C A T 28C 17A I is a fast, tow power, 5V-only C M O S E2P R O M requiring a simple interface for insystem programming. • ■ On-chip address and data latches, self-timed write

Contextual Info: 8381917 SO NY S ONY COM PONENT 90D PRODUCTS CORP/COMPONENT PRODS TO 00501 &3&E3&3 De I 0QD0SD1 /3 -a 7 2048-Bit 128 Word x 16 Bit Non-Volatile Memory Description Package Outline The C X K 1 0 0 9 P is an electrically erasable and pro­ grammable E2P R O M of 128 word X 16 bit structure,

29736

Abstract: TC58V16BDC TC5816BDC SmartMedia Logical Format ID device code toshiba NAND ID code
Contextual Info: TO S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 bit C M O S N A N D E2P R O M (2 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and

s2914

Abstract: S-2914
Contextual Info: S-2914R CMOS 1K-bit serial E2PROM NS code T h e S -2 9 1 4 R is a high s p e ed , low p o w er 1 K-bit E2P R O M that uses the C M O S floating-gate process. Either 64-w ord x 16-bit or 128-w ord x 8-bit can be selected. • Features • Word/chip erase operation

TH58V128DC

Abstract: FDC-22C
Contextual Info: TO SH IBA TH58V128DC TENTATIVE TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT 128 M b it 16 M x SILICON GATE CM OS 8 bit C M O S N A N D E2P R O M (1 6 M BYTE S m a r t M e d ia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and

c 3866

Abstract: Xicor AN42 X9313Z AN44-48 X9313X Xicor x9313 t 3866
Contextual Info: A p p l ic a t io n N otes HEBE A V A I L A B L E AN42 • AN44-48 • AN50 • AN52 • AN53 • AN71 • AN73 Terminal Voltage ±5V, 32 Taps X9313 E2P O T Nonvolatile Digital Potentiometer FEATURES DESCRIPTION • Low Power CMOS — VCc = 3V to 5.5V — Active Current, 3mA Max

Contextual Info: TOSHIBA TENTATIVE TC58V16BDC T O S H I B A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A T E C M O S 16 M B I T 2 M X 8 BITS C M O S N A N D FLASH E2P R O M D ESC RIP TIO N The TC58V16 device is a single 3.3-volt 16 Mbit NAND Electrically Erasable and Programmable

xicor 2816A

Abstract: MSM28C16A-20 msm28c16 MSM28C16A
Contextual Info: O K I semiconductor MSM28 C 16A 2K-Word x 8-Bit CMOS E2PROM GENERAL DESCRIPTION The M S M 2 8 C 1 6 A R S is a C M O S electrically erasable and pro gra m m a b le read on ly m em ory E2P R O M w ith a capacity of 2,048 w o rd s x 8 bits using a single 5V p o w e r supply. Its tim ing is

Contextual Info: O K I semiconductor MSM28C64A 8K-Word x 8-Bit CMOS E2PROM GENERAL DESCRIPTION The M S M 2 8 C 6 4 A is a C M O S electrically erasable and p ro gra m m a b le read on ly m em ory E2P RO M w ith a capacity of 8192 w o rd s x 8 bits u sin g a single 5V p o w e r supply. Its tim in g is

Contextual Info: S-2919CR/I C M O S 1 K -b it s e ria l E 2P R O M E a s y in te rfa c e w ith s e r ia l port W ith m e m o r y p ro te ctio n T h e S -2 9 1 9 C R /I is a high speed , low pow er 1 K-bit E2P R O M that uses the C M O S floating-gate process. T h e organization is 64-w ord x 16-bit, and it is read or

Contextual Info: A p p l ic a t io n N ote A V A I L A B L E AN63 l 8051 Microcontroller Family Compatible X88C64 64K & E O K ! 8192 x 8 Bit E2 Micro-Peripheral FEATUR ES D E S C R IP T IO N • C O N C U R R E N T R E A D W R IT E T he X 8 8 C 6 4 is an 8 K x 8 E2P R O M fa b ric a te d w ith

Contextual Info: O K I semiconductor MSM28C16A 2K-Word x 8-Bit CMOS E2PROM G E N E R A L DESCRIPTIO N T h e M S M 2 8 C 1 6 A R S is a C M O S e le ctrically e ra sa b le a n d p r o g r a m m a b le rea d o n ly m e m o r y E2P R O M w it h a ca p a c ity o f 2,048 w o r d s x 8 bits u s in g a s in g le 5 V p o w e r su p p ly. Its t im in g is

S-2929C

Abstract: S-2939C S-29X9C
Contextual Info: S-29X9C Series CMOS 1K/2K/4K-bit SERIAL E2PROM T h e S -2 9 X 9 C S e rie s is 1 K /2 K /4 K -b it E2P R O M c h a ra c te riz e d b y a w id e o p e ra tin g v o lta g e ra n g e a n d lo w p o w e r c o n s u m p tio n . The o rg a n iza tio n is 6 4 -w o rd x 16 -b it, 1 2 8 -w o rd x 16 -b it a n d 2 5 6 -w o rd x 16bit, re s p e c tiv e ly .

M36L0T8060

Abstract: flash E2p M69KW096B
Contextual Info: M36L0T8060T1 M36L0T8060B1 256 Mbit 16 Mb x16, multiple bank, multilevel, burst Flash memory and 64 Mbit PSRAM, 1.8 V core, 3 V I/O supply, multichip package Features Multichip package • 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory

SOCKET PLCC28

Abstract: 24c256 Atmel TANTAL 16V marking code p42 SMD AT88C51 eeprom 24C256 at89 c31 E2p device marking atmel 24c256 iso7816 sim
Contextual Info: AT89STK-03 Starter Kit for AT8xC5122 & AT83C5123 . Hardware User Guide Table of Contents Section 1 Introduction . 1-1

J-STD-020B

Abstract: M36W0T7050B0 M36W0T7050T0 M69AW048B
Contextual Info: M36W0T7050T0 M36W0T7050B0 128Mbit Multiple Bank, 8Mb x 16, Burst Flash Memory 32Mbit (2M x16) PSRAM, Dual Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM