E-014 Search Results
E-014 Datasheets (5)
NCEPOWER
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
NCE0140I2
|
NCEPOWER | NCE0140I2 is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 40A continuous drain current, and low on-resistance of 13mΩ typical at VGS=10V, using advanced trench technology for high efficiency and thermal performance. | Original | ||||
NCE0140K2
|
NCEPOWER | NCE0140K2 is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 40A continuous drain current, and low on-resistance of 13mΩ typical at VGS=10V, designed for high-frequency switching applications. | Original | ||||
NCE0140KA
|
NCEPOWER | NCE0140KA is an N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 40A continuous drain current, and low RDS(ON) of 17mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance. | Original | ||||
NCE0140IA
|
NCEPOWER | NCE0140IA N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 40A continuous drain current, RDS(ON) less than 17mΩ at VGS=10V, and low gate charge for high-efficiency power switching applications. | Original | ||||
NCE0140AK2
|
NCEPOWER | NCE0140AK2 is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 40A continuous drain current, and low on-resistance of 14mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. | Original |
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