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    E--02 Search Results

    E--02 Datasheets (34)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    E02
    		EMCO High Voltage Proportional DC to HV DC Converter Original PDF 265.63KB 1
    E02425-000
    		Tyco Electronics Wire & Harness ID Products; HLX203RD1TS033B-PREV ( Tyco Electronics ) Original PDF 5.56MB 85
    E02-5
    		EMCO High Voltage Proportional DC to HV DC Converter Original PDF 265.63KB 1
    E02CT
    		EMCO High Voltage DUAL POLARITY HIGH VOLTAGE MODULE Original PDF 505.03KB 2
    badge NCE0260P
    		NCEPOWER NCE0260P N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, and 32mΩ typical RDS(ON) at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge NCE0224AF
    		NCEPOWER NCE0224AF N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, 62mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for high-frequency switching applications. Original PDF
    badge NCE0208IA
    		NCEPOWER NCE0208IA N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 8A continuous drain current, 260mΩ typical RDS(ON) at VGS=10V, and low gate charge, suitable for power switching and high-frequency applications. Original PDF
    badge NCE0224AK
    		NCEPOWER NCE0224AK N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 62mΩ typical RDS(ON) at 10V VGS, using trench technology for low gate charge and high efficiency in power switching applications. Original PDF
    badge FM33LE023
    		Shanghai Fudan Microelectronics Group Co Limited 32-bit ARM Cortex-M0+ MCU with 128/64KB Flash, 16KB RAM, 64MHz max frequency, and multiple low-power modes including Sleep and DeepSleep. Original PDF
    badge NCE025N30G
    		NCEPOWER NCE025N30G is a 30V, 115A DFN5x6-8L MOSFET with 2.2mΩ RDS(ON) at VGS=10V, advanced trench technology, low gate charge, suitable for high-frequency switching and DC/DC conversion applications. Original PDF
    badge NCE0275
    		NCEPOWER NCE0275 is a Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 75A continuous drain current, and low on-resistance of 19mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance. Original PDF
    badge NCE0224D
    		NCEPOWER NCE0224D N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 64mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low gate charge and high efficiency in power switching applications. Original PDF
    badge NCE0224F
    		NCEPOWER NCE0224F N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 64mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low on-resistance and high efficiency in power switching applications. Original PDF
    badge NCE0240
    		NCEPOWER NCE0240 is an N-channel enhancement mode power MOSFET with 200V drain-source voltage, 40A continuous drain current, and low on-resistance of 36.4mΩ at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge NCE0240F
    		NCEPOWER NCE0240F N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 40A continuous drain current, and 36.4mΩ typical RDS(ON) at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge NCE0260T
    		NCEPOWER NCE0260T N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, and 32mΩ typical RDS(ON) at 10V gate-source voltage, designed for high-frequency switching applications. Original PDF
    badge NCE0275D
    		NCEPOWER 200V, 75A NCE0275D power MOSFET with advanced trench technology, offering low RDS(ON) of 19mΩ at VGS=10V, low gate charge, high EAS capability, and designed for automotive, hard-switched, and high-frequency applications. Original PDF
    badge NCE0275T
    		NCEPOWER 200V, 75A NCE0275T power MOSFET with advanced trench technology, offering low RDS(ON) of 19mΩ at VGS=10V, high current capability, and optimized performance for automotive and high-frequency switching applications. Original PDF
    badge JMTE025N04D
    		Jiangsu JieJie Microelectronics Co Ltd 40V, 190A, 1.5mΩ N-channel Power Trench MOSFET in TO-263-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. Original PDF
    badge NCE0224A
    		NCEPOWER NCE0224A N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 80mΩ maximum RDS(ON) at 10V gate-source voltage, utilizing trench technology for low on-resistance and high efficiency in power switching applications. Original PDF
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    E--02 Price and Stock

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    Nextgen Components E0201X7R222K250NTA

    Auto. MLCC X7R 2.2nF 10% 25V 020
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    Nextgen Components E0201C0G101J500NTA

    Auto. MLCC C0G 100pF 5% 50V 0201
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    DigiKey E0201C0G101J500NTA Tape & Reel 9,000,000 90,000
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    KEMET Corporation T520V157M010ATE025

    CAP TANT POLY 150UF 10V 2917
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    DigiKey () T520V157M010ATE025 Cut Tape 4,814 1
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    T520V157M010ATE025 Digi-Reel 4,814 1
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    Bristol Electronics T520V157M010ATE025 41
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    Chip 1 Exchange T520V157M010ATE025 468
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    Kübler 8.5020.281E.0256

    Incremental Encoder 5020
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    DigiKey 8.5020.281E.0256 Bulk 593 1
    • 1 $425.00
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    KEMET Corporation T510X687M006ATE023

    CAP TANT 680UF 20% 6.3V 2917
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    DigiKey () T510X687M006ATE023 Tape & Reel 562 500
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    T510X687M006ATE023 Digi-Reel 562 1
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    T510X687M006ATE023 Cut Tape 562 1
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