E 392 Search Results

BJ 131-6

Abstract: 131-6 bj
Contextual Info: 2 DATE RE V . ECN A P P 'D BY 12-19-08 AO - - . 6 0 5 [ 1 5 . 3 6 ] MAX. 8 1 5 [ 2 0 . 7 0 ] MAX • LI LI STEWART is n # . 5 3 5 [ 1 3 . 5 9 ] MAX .518 [13.16] lg 1 .392 [9.96] R E C OM ME ND E D P C B HO L E L A Y O U T S E E N FROM C OM P ON E NT S I D E

Contextual Info: 1 I 31 I File No. 392 I SHEET 1 o ~ / 1 Specifications: Pin outer s l e e v e : Brass.m achined, C u Z n 38P b 2 Cliptconfact 6 finger):Beryllium copper,heat tre a te d P la t in g (o u te r sle e v e ) : Tin p lafed:2um /80u,'nickel,5 um /200 u"Tin 2 5 .2 0 ±

grommet connector

Abstract: 39200-309 grommet connector amp 7441 SS-39200-006
Contextual Info: DATE RE V . ECN A P P 'D BY 3-9-05 AO 7 06 2 TRM 1-23-06 Al 7441 JM 12-13-06 A2 7 87 0 TRM .477 [ 12 . 12 ] NOTES: 1. C O N SIS T IN G OF: P R E - I N S E R T E D F R ON T & S H I E L D A S S Y . - P / N : 39200-309 MA NA G E ME NT B A R P / N : 39200-308

Contextual Info: CONFIDENTIAL TABLE 1.1, ABSOLUTE MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re Range -4 0 t o +85 d e g re e s C S to r a g e T e m p e ra tu re Range -5 5 t o +125 d e g re e s C V c c V o lta g e , V d c +13,0 V tu n e V o lta g e , V d c +14.0 DC V o lta g e applied t o

ICS08GP20

Abstract: IC120 B39 TRANSISTOR MOTOROLA MAC 223 ICS08GP20/32 ICS08 WinIDE CASM08W marking B34 diode SCHOTTKY bs170 substitute 16T MARKING BS170 MOTOROLA
Contextual Info: In-Circuit Simulator Operator’s Manual N O N - D I S C L O S U R E M68ICS08GP A G R E E M E N T R E Q U I R E D M68ICS08GPOM/D REV. 1.0 R E Q U I R E D M68ICS08GP Operator’s Manual Important Notice to Users N O N - D I S C L O S U R E A G R E E M E N T

V850ES

Abstract: V850ES instruction set
Contextual Info: User’s Manual 32 V850ES/JE3-E, V850ES/JF3-E, V850ES/JG3-E User’s Manual: Hardware RENESAS MCU V850ES/Jx3-E Microcontrollers V850ES/JE3-E V850ES/JF3-E V850ES/JG3-E PD70F3826 μPD70F3830 μPD70F3834 μPD70F3827 μPD70F3831 μPD70F3835 μPD70F3828 μPD70F3832

NE68135

Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o

mpd70116

Abstract: UPD70116
Contextual Info: MOS INTEGRATED CIRCUIT //PD70116H V30HL V30HL 16-BIT MICROPROCESSOR DESCRIPTION T h e /iP D 70116H (V30H L) is a C M O S 16 -b it m ic ro p ro c e s s o r d e v e lo p e d fro m th e ,uPD70116 (V30™ ). It o ffe rs h ig h e r p ro c e s s in g sp e e d and lo w e r p o w e r c o n s u m p tio n th a n th e ¿¿PD70116.

3470 ntc thermistor

Abstract: LNTG473 LNTK103 LNTG503 lnta502 k 4145 LNTA103 LNTG104 ntc 3990 Lattron
Contextual Info: ermistors T h e r a d ia l ty p e t h e r m is t o r is t h e r m a lly s e n s it iv e a n d h ig h - p re c is e t h e r m is t o r t o h a v e s m a ll B -v a lu e t o le r a n c e a n d r e s is t a n c e . T h is is e p o x y -c o a te d a n d h a s le a d w ir e o f T in c la d c o p p e r.

3182N

Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6

BJT characteristics

Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N4765 thru TEM PER A TU R E CO M PENSA TED ZENER REFERENCE DIODES 1N4774A 9.1 V O L T N O M IN A L Z E N E R V O L T A G E L O W C U R R E N T R A N G E : 0.5 and 1.0 mA MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re :

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N4565 thru 1N4584A TEM PERATURE COMPENSATED ZENER REFERENCE DIODES 6.4 VOLT NOMINAL ZENER VOLTAGE FEATURES MAXIMUM RATINGS 6 .4 V ± 5 % Z e n e r V o lta g e N o te 1 T e m p e ra tu r e C o e ffic ie n t R a n g e : .01

TDA 7277

Abstract: TDA 8345 TDA 7988 tda 9580 TDA 8344 TDA 9394 TDA 8659 AN tda 8945 j tda 7840 ic tda 9361
Contextual Info: Tem ic S e m i c o n d u c t o r s Addresses Europe France T E M IC F rance L es Q u a d ra n ts 3. av en u e du centre B.P. 309 7 8 0 5 4 S t.-Q u e n tin -e n -Y v e lin e s C ed ex Tel: 33 1 3 0 6 0 7 0 0 0 Fax: 33 1 3 0 6 0 7111 Germany T E M IC T E L E F U N K E N

Contextual Info: 2FUA050 thru 2FUA1000 I n ter n a tio n a l S e m ic o n d u c to r , I n c . U LT R A -FA ST R E C O V E R Y S IN G L E P H A S E B R ID G E FEATURES: Ultrafast 25, 50, and 75 N a n o se co n d R e c o v e r T im e s Low Forw ard Vo ltage - Low L e a ka ge Current

Contextual Info: M a ß b ild Typ N enn­ To leran z w id erstan d S -W e rt B estell-Nr. B e m e rk u n g e n O u tlin e draw in g Type R ate d resistan ce T o leran ce B va lu e O rd e rin g c o d e N otes S861 02 41 mc X ! X ' a E in 1 An Q A T o d e r/o r ^25/100 A fl/f l

alj 13003

Abstract: HF 13003 BTS 308 PC 13003 sw 13003 54HC245 smd marking 1331 sot diode pj 87 tyn 208 S70 SMD
Contextual Info: r M I L-M-38510/655 30 S e p t e m b e r 1986 MILITARY SPECIFICATION O M I C R O C I R C U I T S , D I G T T A L , H I G H S P E E D , CMOS, BU S TRANSC E I V E R S ' , W I TH T H R E E - S T A T E O U T P U T S , ‘ MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d for use by all D e p a r t ­

el 803

Abstract: el803 telefunken ta 400 TELEFUNKEN el 803 s telefunken ra 200 tube el 36
Contextual Info: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung DC-AC-Heating indirectly heated connected in parallel . . . " EL 0 Q 0 _ _ _ _ _ _ TELEFUNKEN B r e itb a n d L e is t u n g s p e n t o d e W id e -b a n d P o w e r-p e n to d e Uf 6 ,3 V If 650

Contextual Info: 1N4954 1N5968 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N4996 1N5969 5 WATT TRANSFER MOLDED ZENER DIODES MAXIMUM RATINGS * O p e ra tin g T e m p e ra tu re : S to ra g e T e m p e ra tu re : FEATURES -65 °C to +175 °C -65 °C to +200 °C

Contextual Info: LOW OHMIC VALUE CHIP RESISTORS Features • C u rre n t s e n s in g o f D e s k to p & N o te B o o k P C ■ Lo w In d u c ta n c e ■ R e s is ta n c e v a lu e s d o w n to 0 .0 1 0 o h m s ■ H igh s p e e ô lo g ic c irc u its ■ H ig h ly re lia b le m u ltila y e r e le c tro d e c o n s tru c tio n

Contextual Info: A G65SC150 CMD Microcircuits_ CMOS Communications Terminal Unit Telecommunication Microcomputer Features General Description • G e n e ra te s s ig n a ls c o m p a tib le w ith s w itc h e d t e le p h o n e n e tw o rk s

Contextual Info: Temic TCYS5201 S e m i c o n d u c t o r s Transmissive Optical Sensor with Schmitt TVigger Logic Output Description T h is d e v ic e c o n sis ts o f a tra n s m is siv e s e n s o r w ith a 3 -p in c o n n ec to r. T h e o p e ra tin g w a v e le n g th is X = 9 5 0 n m . T h e

M68HC12B

Abstract: HC12 J1850 MC68HC MC68HC12BE32 MC68HC912B32 MC68HC912BC32 S9S8 J38M 841B-02
Contextual Info: Advance Information This document contains information on a new product. Specifications and information herein are subject to change without notice. A G R E E M E N T M68HC12B Family N O N - D I S C L O S U R E HC12 R E Q U I R E D Order this document by M68HC12B/D

Contextual Info: M68HC16Z Series MC68HC16Z1 MC68CK16Z1 MC68CM16Z1 MC68HC16Z2 MC68HC16Z3 MC68HC16Z4 MC68CK16Z4 User’s Manual Freescale Semiconductor, Inc., 2004. All rights reserved. R E Q U I R E D HC16 A G R E E M E N T Order this document by MC68HC16ZUM/AD N O N - D I S C L O S U R E