E 212 FET Search Results

Contextual Info: , iJnc. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 MTP5N40E TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to

Contextual Info: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP2N60E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

HCS08

Abstract: MC1321 MC13211 MC13212 MC13213 MC13214 TPM module hcs08 microcontroller architecture
Contextual Info: MC13211/212/213/214 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.1 10/2006 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com

MC1321

Abstract: bpl DVD player circuit diagram HCS08 MC13211 MC13212 MC13213 PWM generation using TPM module GB60 DVD BOARD LAYOUT BF Marking MSE9S08GB60A
Contextual Info: MC13211/212/213 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.6 05/2010 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com

Contextual Info: MC13211/212/213 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.4 08/2009 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com

Contextual Info: 10aucti, Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet TMOS E-FET ™ MTP4N80E Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

689S08A

Abstract: ZigBee RF4CE Stack MC13211 4L11Y MC9S08GBA ce 4L11Y
Contextual Info: MC13211/212/213 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.5 03/2010 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com

Contextual Info: CH1786 Family - 2400bps Modem Ultra Small Module Cermetek M icro e le ctro n ics Ine u IT C' f y,.#h .,1 ~ 7 ö b V k < ^ ¡fi. Now U.L 1459 Approvedjj IO FEATURES • Supports Standards CCITT V.22bis, V.22, Bell 212, and Bell 103 FCC Part 68 approved arid DOC approvable

Contextual Info: <$£mi- l on ., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA MTP25N05E TMOS IV risvvc;i i iv^iui i_ii«7i*b iiciiioioiui N-Channel Enhancement-Mode Silicon Gate This advanced "E" series of TMOS power MOSFETs is designed to withstand high

1RFD120

Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
Contextual Info: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode

NE800495-4

Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
Contextual Info: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D

ATF-10735

Abstract: ATF-20135 ATF20135
Contextual Info: AVANTEK INC Ot.E D J A A V A N T E IC •E l\ U M lU h DDGSTbfl 1 | ATF-20135 ATF-10735 2-12 GHz General Purpose Gallium Arsenide FET T-31-25 Avantek micro-X Package Features .085 • High Associated Gain 12.5 dB typical at 4 GHz • Low Bias Vd s =2V, lDs =20 mA

Contextual Info: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on

AD004T2-00

Abstract: AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 AS349-12 AH002R2-11
Contextual Info: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on

AT002D8-25

Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator In 16 Lead SOIC1,2 ,4 ,8 dB Bits DC-2 GHz AT002D8-25 Features 1 , 2 , 4 , 8 dB Bits D esigned for C om m ercial Applications S urface M ount 16 Lead S O IC Low P ow er C onsum ption 8 dB 1 dB 2 dB 4 dB Description T h e A T 0 0 2 D 8 -2 5 is a M M IC F E T Digital A ttenuator

AS419M4-49

Abstract: AD004T2-00 AD004T2-11 AK006R2-01 AK006R2-10 AS002M4-00 AS006M1-01 AS006M1-10
Contextual Info: GaAs MMIC FET SP4T Non-Reflective Switch In 24 Lead SOIC Package DC-3 GHz SlAlphi AS419M 4-49 Features • S urface M ount 2 4 Lead S O IC P ackage ■ Designed for Commercial Applications Description T h e A S 4 1 9 M 4 - 4 9 is a n o n -reflective S P 4 T F E T

spf 316

Abstract: spf8
Contextual Info: SPF-684, -884 2-12 GHz Low Noise PHEMT GaAs FET August, 1993 84 Plastic Package Features - Pseudomorphlc HEMT Technology - Low Noise Figure: 0.5dB Typical at 4 GHz - High Associated Gain: 15dB Typical at 4 GHz - Low Cost Plastic Package - Tape and Reel Packaging Available

Contextual Info: GaAs 30 dB MMIC FET Voltage Variable Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, N on-R eflective

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bit Values DC-2 GHz EBA lph AK402D4-24 Features • D esigned fo r C om m ercial A pplications ■ S urface M ount 14 Lead SO IC ■ Low DC C urrent < 1 6 m A Total ■ Integral D river C om patible

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

Contextual Info: GaAs 15 dB MMIC FET Voltage Variable Attenuator DC-2 GHz AF002N2-12 Features • Single Voltage Control ■ Low Cost ■ 15 dB Range ■ Very Low DC Dissipation ■ Easily Adapted for Positive Control ■ Non-Reflective Description Absolute Maximum Ratings

Contextual Info: GaAs MMIC FET Diversity Switch In 8 Lead SOIC DC-2.5 GHz EBAlph ADC02D2-12 Features Low Cost Independent Four Port Switching Individual Voltage Control on Each Port Description The ADC02D2 is a 4 port switch with independent DC voltage control on each port.

AF002C1-32

Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Contextual Info: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:

AS117-45

Abstract: AD004T2-00 AK006R2-01
Contextual Info: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control