E 212 FET Search Results

Contextual Info: , iJnc. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 MTP5N40E TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to

Contextual Info: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP2N60E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

HCS08

Abstract: MC1321 MC13211 MC13212 MC13213 MC13214 TPM module hcs08 microcontroller architecture
Contextual Info: MC13211/212/213/214 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.1 10/2006 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com

MC1321

Abstract: bpl DVD player circuit diagram HCS08 MC13211 MC13212 MC13213 PWM generation using TPM module GB60 DVD BOARD LAYOUT BF Marking MSE9S08GB60A
Contextual Info: MC13211/212/213 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.6 05/2010 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com

Contextual Info: MC13211/212/213 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.4 08/2009 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com

Contextual Info: 10aucti, Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet TMOS E-FET ™ MTP4N80E Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

689S08A

Abstract: ZigBee RF4CE Stack MC13211 4L11Y MC9S08GBA ce 4L11Y
Contextual Info: MC13211/212/213 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.5 03/2010 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com

Contextual Info: <$£mi- l on ., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA MTP25N05E TMOS IV risvvc;i i iv^iui i_ii«7i*b iiciiioioiui N-Channel Enhancement-Mode Silicon Gate This advanced "E" series of TMOS power MOSFETs is designed to withstand high

Contextual Info: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on

Contextual Info: GaAs MMIC FET SP4T Non-Reflective Switch In 24 Lead SOIC Package DC-3 GHz EUAIph AS419M4-49 Features • S urface M ount 2 4 Lead S O IC P ackage ■ Designed for Commercial Applications Description T h e A S 4 1 9 M 4 - 4 9 is a n o n -reflective S P 4 T F E T

spf 316

Abstract: spf8
Contextual Info: SPF-684, -884 2-12 GHz Low Noise PHEMT GaAs FET August, 1993 84 Plastic Package Features - Pseudomorphlc HEMT Technology - Low Noise Figure: 0.5dB Typical at 4 GHz - High Associated Gain: 15dB Typical at 4 GHz - Low Cost Plastic Package - Tape and Reel Packaging Available

Contextual Info: GaAs 30 dB MMIC FET Voltage Variable Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, N on-R eflective

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bit Values DC-2 GHz EBA lph AK402D4-24 Features • D esigned fo r C om m ercial A pplications ■ S urface M ount 14 Lead SO IC ■ Low DC C urrent < 1 6 m A Total ■ Integral D river C om patible

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

Contextual Info: GaAs MMIC FET Diversity Switch In 8 Lead SOIC DC-2.5 GHz EBAlph ADC02D2-12 Features Low Cost Independent Four Port Switching Individual Voltage Control on Each Port Description The ADC02D2 is a 4 port switch with independent DC voltage control on each port.

Contextual Info: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 A lpha r - r ^ - .n I t v ■,. : v ^ w AS11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control

Contextual Info: GaAs MMIC FET10 Watt Diversity Switch In 14 Lead SOIC DC-1.6 GHz ADHD1D2-24 Features • High Power Handling Capability P - 1 dB > 10W ■ Two Line Voltage Control ■ Independent Four Port Switching ■ Portable Radio TR Switching Description The A D H D 1D 2-24 is a 4 port switch with two line DC

Contextual Info: GaAs MMIC FET 2 Bit Digital Attenuator With Driver 16 and 32 dB Bit Values DC-2 GHz EBAlph AK002D2-24 Features • Designed for Commercial Applications ■ Surface Mount 14 Lead SOIC ■ Low DC Power Consumption ~ 20 mW Per Bit ■ Integral Driver +5V, -5V; CMOS and TTL

Contextual Info: GaAs MIMIC FET10 Watt Diversity Switch In 14 Lead SOIC DC-1.6 GHz ËBAlph ADH01D2-24 Features • High Power Handling Capability P -1 dB > 10W ■ Independent Four Port Switching ■ Portable Radio TR Switching ■ Individual Voltage Control on Each Port

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bits DC-2 GHz ËSAIphi AK002D4-31 Features Designed for Military Applications 14 Lead Metal Surface Mount Package Low DC Power Consumption -20 mW Per Bit Integral Driver +5V, -5V, CMOS & TTL Compatible

Contextual Info: WJ-A45 / SMA45 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN 17.5 dB TYP. LOW NOISE 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN SWT WÊÊsÈSÊÊlÊÈBr Outline Drawings A45 Specifications*

Contextual Info: <£e.mi-Concluctoi ZPioducti, Inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201 376-2922 (212) 227-6005 FAX: (201) 376-8960 MTP20N10E Designer's Data Sheet TMOS IV Power Field Effect Transistor TMOS POWER FET 20 AMPERES ros(on) = 0.15 OHM

ATF-45100

Abstract: ATF45100-GP6 at8151
Contextual Info: HEWLETT-PACKARD/ CflPNTS m blE ]> HEW LETT PACKARD • M447SÖ4 G O Q ^ S M Features • • • 3T7 ■ H P A ATF-45100 AT-8151 2-12 GHz Medium Power Gallium Arsenide FET Chip Outline High Output Power: 29.0 dBm typical Pi <mat 4 GHz High Gain at 1 dB Compression:

nec 2501 904

Abstract: AN 17821 audio nec 303 j fet nec 7912
Contextual Info: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION