E 1110 DIODE Search Results

1N846

Abstract: 1N889 APD400
Contextual Info: Datasheet 1N846 THRU 1N889 Central SILICON GENERAL PURPOSE DIODES Semiconductor Corp. AXIAL LEAD GLASS CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR 1N846 s e r i e s

diode Marking code A2

Abstract: Switching diode 80V 200mA marking code C2 diode CMPD3003 CMPD3003A CMPD3003C CMPD3003S marking code A2 diode VR125 DIODE marking A2
Contextual Info: D a ta s h e e t W0llf 1 1 CMPD3003 CMPD3003A CMPD3003C CMPD3003S 91 TM M I I l Corp. 1 1 1 1 1 1 1 SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 Manufacturers of World Class Discrete Semiconductors

diode germanium 1n270

Abstract: 1N270 1N270 diode diode germanium 1n283 diodes 1n270 Germanium Diode 1n270 diode 1N270 1N270 diode germanium 1N277 gold bonded germanium diode 1N270
Contextual Info: Data Sheet 1N270 1N277 1N281 Central' 1N283 GERMANIUM DIODE Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D0-7 CASE Manufacturers of World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR INIOOA, 1N270, 1N277, 1N281, 1N283 t y p e s a r e G old Bonded Germaniun

0X00

Abstract: 16C550 LM3S1110
Contextual Info: P R E L IMI NARY LM3S1110 Microcontroller D ATA SH E E T D S -LM3 S 1110 - 1 5 8 2 Copyr i ght 2007 Lum i nar y M i c ro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR

1N4157

Abstract: Forward Reference Diode 1N4156 1N5179 CN4156 CN4157 CN5179 CNA156
Contextual Info: Datasheet CN4156 Central ^ CN4157 CN5179 - _ • FORWARD REFERENCE DIODE STABISTOR a e n iiG O iiciifC T o r w u rp . 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 A X IA L LEAD EPOXY CASE Manufacturers of World Class Discrete Semiconductors

Contextual Info: CPD31X Schottky Diode Chip 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 w w w . c e n t r a l s e m i . c o m The CPD31X Schottky die is optimized for alternative energy applications. The 6 mil thick die provides an ultra low profile that is readily attached via standard die attach methods.

1N5913B

Abstract: 1N5914B 1N5915B 1N5916B 1N5917B 1N5918B 1N5919B 1N5920B 1N5956B
Contextual Info: Data Sheet ^ - 1N5913B thru 1N5956B m wB m S e m ic o n d u c t o r C o rp . 1.5 WATT ZENER DIODE 3.3 VOLTS to 200 VOLTS 5% TOLERANCE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-41 CASE

Schottky diode Die IR

Contextual Info: CPD32X Schottky Diode Chip 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 w w w . c e n t r a l s e m i . c o m The CPD32X Schottky die is optimized for alternative energy applications. The 6 mil thick die provides an ultra low profile that is readily attached via standard die attach methods.

N4111

Abstract: 1N4099 1N4105 DIODE ZENER 1N4101 1N4100 1N4101 1N4102 1N4103 1N4104 1N4106
Contextual Info: Datasheet w c v n iQ 1N4099 thru 1N4135 • 250mW ZENER DIODE 5% TOLERANCE a e n iiG o iiD u c io i c o r p . 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors

9.1 zener

Abstract: 1N3691B zener diode 10w 710b 1N3675B 1N3676B 1N3677B 1N3678B 1N3679B 1N3681B
Contextual Info: Data Sheet Central" 1N3675B t h r u 1N3710B 1 .0W ZENER DIODE 6.8 VOLTS t o 200 VOLTS 5 % TOLERANCE S e m ic o n d u c to r C o rp . 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-41 Case Manufacturers of World Class Discrete Semiconductors

1N995

Abstract: 1n995 diode 1N99A 1N99 1N994 Germanium desi 30 "Germanium Diode"
Contextual Info: Datasheet Central' 1N99A 1N995 Sem iconductor Corp. G E R M A N IU M D I O D E 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D O-7 CASE M an ufactu rers of World C l a s s Discrete S e m ic o n d u c t o r s d e s c r ip t io n

CBR10-010P

Abstract: CBR25-010P CBR35-010P CBR35-060PW
Contextual Info: Data Sheet CBR10-010P SERIES CBR25-010P SERIES CBR35-010P SERIES X Central m _ _• TM S e m ic o n d u cto r Corp. SILICON BRIDGE RECTIFIER 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 10 THRU 35A, 100 THRU 1000V

DIODE IR 1F

Abstract: 1N914A 1N914B
Contextual Info: Datasheet Central 1N914A 1N9HB Sem iconductor Corp. SILICON SWITCHING DI ODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World C la ss Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 1N9 1^A,B t y p e s a r e v e r y h i g h s p e ed S i l i c o n

N444

Abstract: 1N4444
Contextual Info: Datasheet Central 1N4444 Sem iconductor Corp. SILICON 145 A dam s Avenue, Hauppauge, NY 11788 U SA Tel: 631 435-1110 • Fax: (631) 435-1824 S WI T C H I NG DI OD E JEDEC DO- 3 5 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4444 silicon planar epitaxial diode is characterized by ¡ts

1N4678

Abstract: 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685 1N4717
Contextual Info: Data Sheet Central 1N 4 6 7 8 T H R U 1N 4717 500 m W L O W L E V E L Z E N E R D IO D E 1.8 V O L T S T O 4 3 V O L T S 5% T O L E R A N C E Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 D O -3 5 C A S E

SKR 870

Abstract: SKN870 DIN41814
Contextual Info: s e MIKRO n Rectifier Diodes Ifa v sin. 180; Tease = 85 =C V rsm V rrm 500 A V 400 800 — - 720 A 1110 A SKN 501/04 SKN 501/08 SKN 501/12 SKN 501/14 SKN 501/16 SKN 870/04 - SKN 870/12 1200 - 1400 1600 - 1800 SKN 450/18 SKN 450/20 SKN 450/22 SKN 450/24 SKN 450/25

SCR 219F

Abstract: 0X00 16C550 LM3S1000 LM3S1110 108-Pin
Contextual Info: P RE LIMIN ARY LM3S1110 Microcontroller D ATA SHE E T D S -LM3S 1110 - 3 4 4 7 C o p yri g h t 2 0 0 7 -2 0 0 8 L u mi n ary Mi cro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR

1510C

Abstract: EL1510 R10G S443
Contextual Info: TTTDVm DDQIMSS bbD • SAK J T-1 3/4 Standard Type Non-Diffused SANKEN SEL 1110 S SEL 1110 C SEL1310E SANKEN LIGHT EMITTING DIODES SEL 1510 C SEL1710K FEATURES • W ide A pp licatio n Range • For D isplay and Other General Uses • L o n g -life /H ig h R eliability

L1110

Abstract: 1310
Contextual Info: 7^0741 3-1 QGG144a 13T « S A K J Individual Specifications SANKEN T-1 3 /4 Standard Type Diffused SANKEN LIGHT EM ITTING DIODES SEL 1110 R SEL 1110W SEL 1310 G SEL 1710 Y FEATURES • Wide Application Range • For Display and Other General Uses • Long-life/High Reliability

3 phase bridge scr drive circuit diagram

Abstract: scr firing circuit diagram for three phase rectifier scr firing circuit diagram for 3 phase rectifier ir1110 scr firing ic for three phase bridge SCR 3Phase Control IC PWM 3phase 50hz SCR three phase half bridge controller for scr half b full bridge scr firing circuit diagram for three phase ac power controller snubber FOR 3PHASE BRIDGE RECTIFIER
Contextual Info: IRMDSS1 IR1110 Soft Start IC Reference Design Kit For AC Motor Drives, UPS, Welders, and other applications • • • • • • • • • • • • • • Complete stand alone converter system IR1110 advanced monolithic soft start IC IRKH SCR/Diode Modules

diode E 1110

Abstract: pgr 1110 e 1110 diode
Contextual Info: PGR 1110 Compact PIN Receiver This compact P IN receiver is especially suited for F IT L Fiber In The Loop and similar short and medium haul telecom applications. The module includes a InGaAs PIN diode and is optimizedfor -40 to + 85 °C operation. PGR 1110/R

42R2

Abstract: Thomson-CSF 22R2 62R2 All diodes KU 506 BYW 70 RP 8040 X BYW88-100 FR58A C1-200
Contextual Info: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

dsa diodes DSA 401

Abstract: G DSA 908-44 A G dsa 605-23 A DSA 908-44 A G 0/dsa diodes DSA 401 dsa 405-44
Contextual Info: A S E A BROUN/ABB Netzdioden Dkxfe DS SA fo D f Typ/type aS"- SEMICON li — — — Diodes de redressement Rectifier diodes V rrm Ifrm s Ifavi Ifavm Tc = V 50° C 100°C D SA J[ £ DS Avalanche Typ - V A °C A A r i □ □ 4 fl3Ufi ft Ifsm OVJM) (10 ms)

LT1560ED

Abstract: PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51
Contextual Info: SHARP Model No. List Model No. List • Infrared Emitting Diodes Model No. GL1F20 GL380 QL381 GL382 GL390 GL390V GL453 GL454 GL480 GL480Q GL4S3Q GL4800 GL460 GL461 GL4600 GL4610 GL4100 GL4200 GL4910 GL496 GL513F GL514 GL560 GL561 GL533 GL537 GL538 GL550 GL551