DYNEX IGBT 1200V Search Results

2sd315ai

Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
Contextual Info: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.

bi-directional switches IGBT

Abstract: 6.5kV IGBT AN5700 dynex igbt die bi-directional IGBT igbt full h bridge DIM200PLM33-A019 bidirectional switch "bi-directional switches" IGBT switched reluctance machine
Contextual Info: AN5700 - IGBT/FRD Identifier Part Numbering Scheme For IGBT & FRD Modules AN5700-1.4 February 2004 Since February 2001 Dynex has used the following part numbering scheme for new releases of product. A typical product has a part number of the form DIM800DDM17-A000, made up as below:

DCR370T

Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DCR2950W

Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DCR2950W

Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DS5306-2

Abstract: IGBT ac switch circuit AN4502 AN4503 AN4505 AN4506 GP400LSS12 AN5000 principle of rating
Contextual Info: GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200V Rating ■ 400A Per Module DS5306-2.3 November 2000

AN4502

Abstract: AN4503 AN4505 GP800DDS12 basic single phase ac motor reverse forward circuit diagram
Contextual Info: GP800DDS12 GP800DDS12 Powerline N-Channel Dual Switch IGBT Module Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000 The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

AN4502

Abstract: AN4503 AN4505 AN4506 GP400DDS12
Contextual Info: GP400DDS12 GP400DDS12 Powerline N-Channel Dual Switch IGBT Module DS5341-1.1 February 2000 The GP400DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the module is suitable for a variety of high voltage applications

AN4502

Abstract: AN4503 AN4505 AN4506 GP2400ESM12 S2400A MAX4800A
Contextual Info: GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

AN450

Abstract: AN4502 AN4503 AN4505 GP800FSS12
Contextual Info: GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar

AN4502

Abstract: AN4503 AN4505 GP1600FSS12 set igbt on off Vge DS5173-4
Contextual Info: GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

transistor 8929

Contextual Info: DIM1200FSS12-A000 Single Switch IGBT Module DS5834-1.0 March 2005 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23835) 1200V 2.2V 1200A 2400A Isolated Copper Baseplate

AN4502

Abstract: AN4503 AN4505 AN4506 AN4507 GP401DDM18 K1p TRANSISTOR
Contextual Info: GP401DDM18 GP401DDM18 Hi-Reliability Dual Switch Low VCE SAT IGBT Module Advance Information DS5397-1.2 January 2001 FEATURES • Low VCE(SAT) ■ 400A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DIM600BBS17-A000

Contextual Info: DIM600BBS17-A000 Single Switch IGBT Module DS5692-1.3.0 June 2007 LN25344 FEATURES • 10 s Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE (sat) * IC (max) IC(PK) (max) 1200V 1.7 V 600A

DIM400WHS12-A000

Contextual Info: DIM400WHS12-A000 Half Bridge IGBT Module DS5689-3.1 July 2007 LN25350 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand KEY PARAMETERS VCES VCE (sat) (typ) IC (max) IC(PK) (max) 1200V 2.2 V 400A 800A Lead Free construction

DIM400BSS12-A000

Contextual Info: DIM400BSS12-A000 Single Switch IGBT Module DS5672-4.1 June 2007 LN25349 FEATURES 10 s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK) (max) 1200V 2.2 V 400A 800A *(Measured at the power bus-bars and not the auxiliary

DIM1600FSS12-A000

Contextual Info: DIM1600FSS12-A000 Single Switch IGBT Module DS5541-2.4 January 2009 LN26557 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) 1200V 2.2V 1600A 3200A Isolated Copper Baseplate * Lead Free construction

DIM800FSS12-A000

Contextual Info: DIM800FSS12-A000 Single Switch IGBT Module DS5867- 1.1 August 2008 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN26319) 1200V 2.2V 800A 1600A Isolated Copper Baseplate * Lead Free construction

Contextual Info: DIM600WHS12-E000 Single Switch IGBT Module DS5837-1.0 April 2005 FEATURES Trench Gate Field Stop Technology Low Conduction Losses KEY PARAMETERS VCES VCE sat (typ) IC (max) IC(PK) (max) (LN23871) 1200V 1.7 V 600A 1200A Low Switching Losses 10 s Short Circuit Withstand

AN4502

Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
Contextual Info: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001

DIM400DDM12-A000

Abstract: DS5532-3
Contextual Info: DIM400DDM12-A000 Dual Switch IGBT Module DS5532-3.1 January 2009 LN26558 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 1200V 2.2 V 400A 800A *(measured at the power busbars and not the auxiliary terminals)

Igbt wafer

Abstract: dynex 600V 100A THYRISTORS IGBT 6500v
Contextual Info: introduction Dynex Semiconductor in Lincoln has 40 years experience in power electronics rectifier diodes, fast turn-off thyristors, GTO thyristors and custom heatsink power assemblies. Dynex Semiconductor is one of the foremost suppliers of pow er se m ic o n d u c to r