DYNAMIC TECHNOLOGY Search Results

Contextual Info: NTE6664 Integrated Circuit 64K–Bit Dynamic RAM Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability.

AT-DSP2200

Abstract: DSAS 13-0 PCI-4552 PCI-4452
Contextual Info: PCI-4551 and PCI-4552 Dynamic Signal Analyzer Instruments Signals that change frequency are considered AC or dynamic signals. Test and measurement systems for acquiring dynamic signals in applications such as vibration, audio, acoustics, speech, and sonar have very different requirements than those

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA S H EE T MB81C4258A-60/-80/-10 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258A is CMOS fully decoded dynamic RAM organized as 262,144 words x 4

A9RV

Abstract: 5s a315 A327
Contextual Info: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

dynamic ram binary cell

Abstract: QBA-1 qab1
Contextual Info: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

NT511740C0J

Abstract: NT511740C0J-50 NT511740C0J-60 NT511740C0J-70 0J70 NT511740
Contextual Info: NT511740C0J 4,194,304-word x 4-bit Dynamic RAM : Fast Page Mode 1. DESCRIPTION The NT511740C0J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate technology. The NT511740C0J achieves high integration , high-speed operation , and low-power

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

HB56A1632B-5

Abstract: Hitachi DSA00166 Nippon capacitors
Contextual Info: HB56A1636 Series, HB56A1632 Series 16,777,216-word x 36-bit High Density Dynamic RAM Module 16,777,216-word × 32-bit High Density Dynamic RAM Module ADE-203-752A Z Rev.1.0 Feb. 27, 1997 Description The HB56A1636 is a 16M × 36 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM

Contextual Info: fÊÔ ' 1993 December 1992 Edition 1.0 FUJITSU DATA SHEET MBS8132100-60/-70/-80 CMOS 32M x 1 BIT FAST PAGE MODE DYNAMIC RAM CMOS 33,554,432 x 1 BIT Fast Page Mode Dynamic RAM Fujitsu MBS8132100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of

A11RC

Contextual Info: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

TC5118160AJ

Contextual Info: TOSHIBA TC5118160AJ/AFT-70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5118160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5118160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: OKI Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.

m51171

Abstract: m32AG M5116
Contextual Info: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

71c464

Contextual Info: PRODUCTSPECIFICATION GM71C464 65,536WORDS x 4 BIT CMOS DYNAMIC RAM Description The GM 71C464 is a high speed dynamic RAM or­ ganized 65,536 x 4 Bit. The GM71C464 utilizes Goldstar's silicon Gate process technology as well as advanced circuit techniques to provide wide operat­

Hitachi DSA00166

Abstract: Nippon capacitors
Contextual Info: HB56H232 Series, HB56H132 Series 2,097,152-word x 32-bit High Density Dynamic RAM Module 1,048,576-word × 32-bit High Density Dynamic RAM Module ADE-203-700B Z Rev.2.0 May. 16, 1997 Description The HB56H232 is a 2M × 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (HM5118165)

26-PIN

Abstract: MSM5116100A
Contextual Info: O K I Semiconductor MSM5116100A_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100A is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100A is OKI’s CMOS silicon gate process technology.

TC5116100

Contextual Info: TOSHIBA TC5116100J/Z/FT-60/70 16,777,216 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC5116100J/Z/FT is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC5116100J/Z/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

tc5118180

Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
Contextual Info: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit

TC514100

Abstract: 514100A
Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

MSM51V17800

Abstract: MSM51V17800DSL
Contextual Info: Pr E2G0127-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800D/DSL achieves high integration, high-speed operation,

msm51v17400d

Abstract: MSM51V17400 MSM51V17400DSL
Contextual Info: Pr E2G0123-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,

VG26S17405FJ

Abstract: 2048x2048x4
Contextual Info: VIS VG26 V (S)17405F 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single

MB81461B-12

Contextual Info: January 1990 Edition 2.0 DATA SHEET FUJITSU MB81461B-12/-15 262,144-BIT DUAL PORT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit D ual Port D R A M The Fujitsu MB81461B is a fully decoded, dynamic NMOS random access memory organized as 65,536 words by 4 bits dynamic RAM port and 256 words by 4

MSM51V17805

Abstract: MSM51V17805DSL
Contextual Info: Pr E2G0129-17-61 im el y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,