DYNAMIC RAM 8 BIT Search Results

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5116800AJ-50/-60/-70/-80 Advanced Information • 2097152 words by 8-bit organization • 0 to 70 -C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

Contextual Info: • • H Y U N D A I H Y 5 1 1 6 8 1 0 S e r ie s 2Mx 8-bit CMOS DRAM with WPB DESCRIPTION The HY5116810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116810 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: P r e lim in a r y ^ GM72V28841 AT/ALT L G S e m i c o n € o » 5l t c i ^ 4,194,304 w o r d x 8 b i t x 4 b a n k SYNCHRONOUS DYNAMIC RAM Description The GM72V28841 AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic

HM5113165LTD-5

Abstract: HM5113165LTD-6 HM5113165TD-5 HM5113165TD-6 Hitachi DSA00201 mw828
Contextual Info: HM5113165 Series 128M EDO DRAM 8-Mword x 16-bit 4k refresh ADE-203-838(Z) Preliminary Rev. 0.0 Oct. 13, 1997 Description The Hitachi HM5113165 Series is 128M-bit dynamic RAM organized as 8,388,608-word × 16-bit. It has realized high performance and low power by employing CMOS process technology. HM5113165 Series

HY5118160

Contextual Info: H Y 5 1 1 8 1 6 0 ‘H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: INTEGRATE] DEVIC E 5ÖE D 402 577 1 001 0 04 4 WÊ 457 • IDT IDT49C402 IDT49C402A IDT49C402B 16-BIT CMOS M ICROPROCESSOR SLICE - T FEATURES: The IDT49C402s include all of the normal functions associated with standard 2901 bit-slice operation: a) a 3-bit

Contextual Info: bbE D INTEGRATE» DEVICE Integrated Device Technology, Inc* • 4ÖS5771 DGlSMOb fiT4 VERY LOW POWER CMOS SRAM FOR NOTEBOOK/LAPTOP CACHE 256k 32k x 8-BIT FEATURES: IDT71256SL IDT71256L Both versions (SL and L) have outstanding low power characteristics, but differ slightly in dynamic and full standby

COPCG

Abstract: COP8CG88 COP888CG copcg-xxx
Contextual Info: MILITARY DATA SHEET Original Creation Date: 07/28/94 Last Update Date: 08/04/94 Last Major Revision Date: 07/28/94 MNCOPCG-XXX/V-MRP REV 0B0 SINGLE-CHIP microCMOS MICROCONTROLLER General Description The COP888 family of microcontrollers uses an 8-bit single chip core architecture

Contextual Info: SIEMENS 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120GS-60/-70/-80 Advanced Inform ation • 1 048 576 w ords by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 1 1 0 n s cycle time (-60 version)

Contextual Info: ¿ggr-v w!y CMOS STATIC RAM 16K 4Kx 4-BIT CACHE-TAG RAM IDT6178S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed Address to MATCH Valid time - Military: 12/15/20/25ns - Commercial: 10/12/15/20/25ns (max.) • High-speed Address Access time

Contextual Info: 1 MEGABIT 128K x 8-BIT CMOS STATIC RAM PLASTIC SIP MODULE i d ï 8MP824S FEATURES: DESCRIPTION: • High-density 1024K (128K x 8) CMOS static RAM module The IDT8MP824S is a1024K (131,072 x 8-bit) high-speed static RAM constructed on an epoxy laminate substrate using four

SC1006

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61298SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (O E) pin available for added system flexibility • High speed (equal access and cycle times)

Contextual Info: BiCMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61B298SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 advanced high-speed BiCMOS static RAM • Equal access and cycle times — Commercial: 10/12/15ns • One Chip Select plus one Output Enable pin

Contextual Info: CMOS STATIC RAM 1 MEG 64K x 16-BIT PRELIMINARY IDT71016 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 12/15/20/25ns • One Chip Select plus one Output Enable pin

6116 CMOS RAM

Contextual Info: CMOS STATIC RAM 16K 2Kx 8-BIT IDT6116SA IDT6116LA Integrated Devicelechnol03y Inc FEATURES: DESCRIPTION: • T h e ID T6116S A /LA is a 16,384-bit h ig h -s p e e d s ta tic RAM or­ g an ize d as 2K x 8. It is fa b rica te d u sin g ID T ’s h igh-perform ance,

Contextual Info: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,

NS41256S25

Abstract: PDM41256V
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 02/05/97 Last Major Revision Date: 11/28/95 MNNS41256S25-X REV 0A0 256K Static RAM 32K x 8 bit General Description NS41256S25 is a high performance, standard power version CMOS static RAM organized as

511000B/BL-60

Abstract: hyb 511
Contextual Info: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60

Contextual Info: CM O S RESETTABLE RAM W ITH C M O S I/O LEVELS 6 4 K 8K x 8-BIT IDT 71C65S IDT 71C65L FEATURES: DESCRIPTION: • Input and output directly CMOS-compatible The IDT71C65 is a 65,536-bit high-speed static RAM organized as 8 K x 8 . Inputs and outputs are com patible with industry stan­

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71T016 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T016 is a 1,048,576-bit very low-power Static RAM organized as 64K x 16. It is fabricated using ID Ts highreliabilityCMOStechnology. Thisstate-of-the-arttechnology,

Contextual Info: HIGH-SPEED 36K 4K x 9-BIT SYNCHRONOUS PIPELINED DUAL-PORT SRAM PRELIMINARY IDT709149S In te g ra ted D e v iz e T e c h n o lo g y , l i e . FEATURES: • Architecture based on Dual-Port SRAM cells — Allows full simultaneous access from both ports • High-speed clock-to-data output times

Contextual Info: : : I d tj LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71L016 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C ) and Industrial (-40° to 85°C)

Contextual Info: HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM IDT7026S/L Integrated D e vic e Techn olo gy, Inc. multiplexed bus compatibility IDT7026 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than one device M/S = H for B U S Y output flag on Master,

Contextual Info: CM OS RESETTABLE RAM WITH CMOS I 0 LEVELS 64K 8K x 8-BIT IDT71C65S IDT71C65L FEATURES: DESCRIPTION: • Input an d output d ire ctly C M O S -co m p atib le • H ig h -speed (equal a c c e s s an d c y c le time) T h e ID T 7 1 C 6 5 Is a 6 5,536-bit h ig h -sp eed static RAM organized