DV/DT DIODE PROTECTION Search Results

Contextual Info: ADVANCE INFORMATION Data Sheet No.PD60181 IR3310 PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Reverse battery protection reverse current operation

hcpl4053

Abstract: IL33153 ac motor speed control circuit diagram with IGBT HCPL-4053 what is fast IGBT transistor desaturation design Discrete IGBTS wiring diagram brushless AC motor HALF BRIDGE NPN DARLINGTON POWER MODULE igbt ac motor speed control
Contextual Info: TECHNICAL DATA IL33153 Single IGBT Gate Driver The IL33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing

IPS521

Abstract: IPS521S SMD220 smd diode UJ 09
Contextual Info: Data Sheet No.PD 60158-H IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over temperature protection with auto-restart Short-circuit protection (current limit) Active clamp E.S.D protection

4219H3

Abstract: TISP4125H3BJR-S GR-1089-CORE TISP4125H3BJR TISP4125M3BJR TISP4125M3BJR-S TISP4219H3BJR TISP4219H3BJR-S TISP4219M3BJR
Contextual Info: *R o H V SC AV ER O M A I S IO P L L A N IA BL S N T E TISP4125H3BJ/TISP4219H3BJ, TISP4125M3BJ/TISP4219M3BJ LCAS RING AND TIP PROTECTION PAIRS BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxH3/M3BJ Series for LCAS Protection Customized Voltage for LCAS Protection

PTO-252

Contextual Info: BTS 452 T Smart Power High-Side-Switch Features Product Summary • Overload protection Overvoltage protection Vbb AZ • Current limitation Operating voltage Vbb(on) • Short circuit protection On-state resistance RON 200 mΩ • Thermal shutdown with restart

tip 37a

Abstract: IR3312
Contextual Info: Data Sheet No.PD60211_A IR3312 PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Product Summary Features • • • • • • • Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Over temperatue shutdown

SG600EX21

Abstract: SG800EX21 SG600EX SGK600
Contextual Info: GATE TURN-OFF THYRISTOR SILICON DIFFUSED TYPE SGK600,800 EX21 Unit in mm CHOPPER, INVERTER APPLICATION F EATURES: 2 — 05.2 ± 0.2 DE EP 2 . 0 i . 0.4 . Repetitive Peak Off-State Voltage V d r m = 2500V . Repetitive Peak Reverse Voltage V r RM=1250V . R.M.S On-State Current

AD3418

Abstract: ph 4148 ph 4148 diode ADP3418K ADP3418 ad341 ADP3188 BST110 sanyo sepc Q1/SW-16
Contextual Info: Dual Bootstrapped 12 V MOSFET Driver with Output Disable ADP3418 FEATURES GENERAL DESCRIPTION All-in-one synchronous buck driver Bootstrapped high-side drive 1 PWM signal generates both drives Anticross-conduction protection circuitry Output disable control turns off both MOSFETs to float the

IRC640

Abstract: DIODE MARKING EJL
Contextual Info: International ras Rectifier P D -9 .5 6 8 A IRC640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 0 .1 8 Q lD = 1 8 A

VNS1NV04D

Abstract: omnifet ii OMNIFET
Contextual Info: VNS1NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNS1NV04D RDS on 250 mΩ (*) Ilim 1.7 A (*) Vclamp 40 V (*) (*) Per each device n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN

Contextual Info: FDB088N08 N-Channel PowerTrench MOSFET 75 V, 85 A, 8.8 mΩ Features Description • RDS on = 7.3 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

GR-1089-CORE

Abstract: TISP3600F3 TISP3600F3SL-S TISP3700F3 SP370
Contextual Info: CO M PL IA NT TISP3600F3, TISP3700F3 *R oH S DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3600F3, TISP3700F3 IEEE Std 802.3 LAN and MAN Applications SL Package Top View Ion-Implanted Breakdown Region Precise and Stable Voltage Terminals T&G, R&G

IRCZ24

Abstract: AN-994
Contextual Info: PD - 9.615A IRCZ24 HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 55V RDS on = 0.040Ω ID = 26A Description Third Generation HEXFETs from International Rectifier provide the designer with

zener pc 838

Abstract: 175C IR2157 C 12 PH zener diode
Contextual Info: ADVANCED INFORMATION Data Sheet No. PD60108B IR2157 FULLY INTEGRATED BALLAST CONTROL IC Features • • • • • • • • Programmable preheat time & frequency • Programmable ignition ramp • Protection from failure-to-strike • Lamp filament sensing & protection

IXYS MCC 550

Abstract: 225-16io1 22516I Thyristor MCD
Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 225 ITRMS = 2 x 400 A MCD 225 ITAVM = 2 x 221 A VRRM = 1200 - 1800 V VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM

Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM60 VDSS RDS on ID 600V < 0.055Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

mcc 550 ixys

Abstract: MCC 132-16io1 IXYS MCC 550 mcc 550
Contextual Info: MCC 132 MCD 132 ITRMS = 2x 300 A ITAVM = 2x 130 A VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM Type V V Version 1 Version 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC 132-08io1 MCC 132-12io1 MCC 132-14io1 MCC 132-16io1

Y60NM60

Abstract: STY60NM60 MAX247
Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM60 VDSS RDS on ID 600V < 0.055Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

ixys MCC 90

Abstract: mcc 250 thyristor MCC 90 12io8 95-16io1 MCC 90 THYRISTOR MODULE MCC 25 ixys MCC 90 12io8 ixys mcc mcc 95 08101b MCD 95 16
Contextual Info: MCC 95 MCD 95 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 180 A ITAVM = 2x 116 A VRRM = 800-1800 V VRSM VRRM VDSM VDRM TO-240 AA V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type 2 Version 1 MCC MCC MCC MCC MCC 95-08io1 95-12io1 95-14io1 95-16io1

ixys mcc 40

Abstract: ixys MCC 90 THYRISTOR MODULE MCC 25 44-08io1 44-16io8 44-08io8 MCC 90 14io8 44-12io1 MCC 25 MCC 90
Contextual Info: MCC 44 MCD 44 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 80 A ITAVM = 2x 51 A VRRM = 800-1800 V VRSM VRRM TO-240 AA VDSM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type 1 Version 1 B Version 8 B Version 8 B MCC 44-08io1 B MCC 44-12io1 B

VND1NV04

Abstract: VNN1NV04 VNS1NV04
Contextual Info: VND1NV04 / VNN1NV04 / VNS1NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND1NV04 RDS on VNN1NV04 250 mΩ Ilim Vclamp 2 1.7 A 40 V VNS1NV04 2 1 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP

transistor k44

Abstract: k44 transistor GR-1089-CORE K44 TRANSISTOR MARKING aag2 Telcordia GR-1089-Core 4A12P-1AH-12R5 TISP8210MDR-S sp82 DSA00273171
Contextual Info: *R oH S CO M PL IA NT TISP8210MD BUFFERED P-GATE SCR DUAL TISP8211MD BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP821xMD Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve

P12NK80Z

Abstract: B12NK80Z STB12NK80Z STB12NK80ZT4 STP12NK80Z
Contextual Info: STP12NK80Z - STB12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A TO-220 / D2PAK Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP12NK80Z STB12NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V < 0.75 Ω < 0.75 Ω 10.5 A 10.5 A 190 W 190 W

P10NK70ZFP

Abstract: p10nk70z P10NK70 STP10NK70ZFP STP10NK70Z *70zfp L9 Zener L4910 p10nk
Contextual Info: STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET TYPE STP10NK70Z STP10NK70ZFP • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 700 V 700 V < 0.85 Ω < 0.85 Ω 8.6 A 8.6 A 150 W 35 W TYPICAL RDS(on) = 0.75 Ω