DUAL-GATE YB Search Results

Contextual Info: TO SH IB A TC74HC390AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC390AP, TC74HC390AF, TC74HC390AFN Note The JED EC SOP (FN) is not available in Japan. DUAL DECADE COUNTER The TC74HC390A is a high speed CMOS DUAL DECADE COUNTER fabricated w ith silicon gate C2MOS technology.

tone Dialer

Abstract: DD221 MSM6234 MSM6234RS VMSM6234RS
Contextual Info: O K I Semiconductor MSM6234 DTMF Tone Dialer LSI GENERAL DESCRIPTION TheMSM6234 is a tone dialer LSI which is fabricated by Oki's low power consumption CMOS silicon gate technology. TheMSM6234can generate 16DTMF Dual Tone Multi Frequency signals which consists of 4 higher

3SK318

Abstract: DSA003643
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK319

Abstract: ADE-208-602 Hitachi DSA00395
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK319

Abstract: Hitachi DSA002759
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

marking is "yb-"

Abstract: Hitachi DSA002759
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

dual-gate YB

Abstract: 3SK318 SC-82AB Hitachi DSA00336
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK319

Abstract: ADE-208-602 DSA003643
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HC153 Dual 4 -In p u t Data S elector/M ultiplexer High-Performance Silicon-Gate CMOS The MC74HC153 is identical in pinout to the LS153. The device inputs are com patible with standard CMOS outputs; with pullup resistors, they are

3SK318

Abstract: 3SK318YB-TL-E 3SK318YB-TL
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 Previous ADE-208-600 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

ADE-208-602

Abstract: 3SK319 3SK319YB-TL-E
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

MC74HC253

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC74HC253 Dual 4 -In p u t Data Selector/ M ultiplexer w ith 3 -S ta te Outputs N SUFFIX PLASTIC PACKAGE CASE 648-08 High-Performance Silicon-Gate CMOS The MC74HC253 is identical in pinout to the LS253. The device inputs are

TRIACS EQUIVALENT LIST

Abstract: IC of XOR GATE sc70-5 IGBT driver 74 XOR GATE SC70-5 SC70-6 NC7SZ04 NC7SZ04M5 NC7SZ14M5 NC7SZ374
Contextual Info: TinyLogic Fairchild’s Offering Fairchild’s TinyLogic® family consists of a broad spectrum of high speed, low power, CMOS single and dual gate logic functions in a choice of six space saving packages: SOT23-5, SC70 6-lead, US8 8-lead, and MicroPak 6 and 8 terminal leadless packages.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HC153 Dual 4 -In p u t D ata S elector/M ultiplexer High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 648-08 The MC74HC153 is identical in pinout to the LS153. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are

IM 5136 ifm

Abstract: 74hc153
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C54/74HC153 Dual 4-Input Data Selector/M ultiplexer J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CM OS The MC54/74HC153 is identical in pinout to the LS153. The device inputs are com patible w ith standard CMOS outputs; w ith pullup resistors, they are compatible

Contextual Info: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 10 — 28 June 2012 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

b10d

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC253 Dual 4-Input Data Selector/ M ultiplexer w ith 3-State Outputs J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CMOS The M C 54/74H C 25 3 is id en tica l in p in o u t to the LS253. The device in p u ts are

Contextual Info: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 10 — 28 June 2012 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

Contextual Info: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 11 — 8 April 2013 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND

Contextual Info: T -U -2t~ 5l MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA MC54/74HC153 Dual 4 -In p u t Data S elector/ M ultip lexer J SUFFIX CERAMIC CASE 620*09 High-Performance Silicon-Gate CM OS The MC54/74HC153 is identical in pinout to the LS153. The device inputs are

Contextual Info: b 3 b ? S S 2 D G t117fll 'Ifl? • M0T4 MOTOROLA SEMICONDUCTOR ■MOTOROLA SC LOGIC blE D TECHNICAL DATA MC54/74HC153 Dual 4-Input Data Selector/M ultiplexer J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CM O S The MC54/74HC153 is identical in pinout to the LS153. The device inputs are

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HC253 Dual 4 -In p u t Data S elector/ M ultiplexer w ith 3 -S ta te Outputs High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 6 4 8 -0 8 - . ï f f f i ï 1 The MC74HC253 is identical in pinout to the LS253. The device inputs are

HC253

Abstract: LS153 MC74HC153 MC74HCXXXD MC74HCXXXN hc153 motorola
Contextual Info: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Dual 4-Input Data Selector/M ultiplexer MC74HC153 High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 6 4 8 -0 8 The MC74HC153 is identical in pinout to the LS153. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are