DUAL RF TRANSISTOR Search Results

PTFB090901EA

Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB

VHF Transceiver IC

Abstract: NE5200 NE5200D NE602A SA5200D RF Radio frequency IC, 8pin 1.2ghz transmitter antenna philips radio 900MHz tv receiver schematic diagram PHILIPS
Contextual Info: Philips Semiconductors RF Communications Products Product specification RF dual gain-stage DESCRIPTION NE/SA5200 FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

GaAs pHEMT LOW SOT-343

Abstract: CLY 2
Contextual Info: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

MQE9

Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Hitachi DSA002743

Abstract: Nippon capacitors
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

HD155121F

Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Contextual Info: O b f*c tlv * pacification P h ilip * Sem iconductor* RF Com m unication* Product* Low-power dual frequency synthesizer for radio communications UMA1015M FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015M is a low-power dual frequency

MAX4589

Abstract: MAX4589CAP MAX4589CPP MAX4589CWP MAX4589EAP MAX4589EPP MAX4589EWP Nippon capacitors
Contextual Info: 19-1424; Rev 0; 1/99 Low-Voltage, High-Isolation, Dual 2-Channel RF/Video Multiplexer Features The MAX4589 low-voltage, dual 2-channel multiplexer is designed for RF and video signal processing at frequencies up to 200MHz in 50Ω and 75Ω systems. On-chip

900mhz frequency generator

Abstract: BV 9y transistor VHF Transceiver IC NE5200D rf transmitter receiver 900Mhz A5200 NE5200 SA5200D RF Radio frequency IC, 8pin 900M Wideband Amplifier
Contextual Info: Product Specification Philips Sem iconductors NE/SA5200 RF dual gain-stage DESCRIPTION FEATURES The NE/SA5200 is a dual amplifier with DC to 1200MHz response. Low noise NF = 3.6dB makes this part ideal for RF front-ends, and a simple power-down mode saves current for

Nippon capacitors

Contextual Info: 19-1424; Rev 0; 1/99 Low-Voltage, High-Isolation, Dual 2-Channel RF/Video Multiplexer Features The MAX4589 low-voltage, dual 2-channel multiplexer is designed for RF and video signal processing at frequencies up to 200MHz in 50Ω and 75Ω systems. On-chip

MRF141G

Abstract: MRF141G data sheet push pull power amplifier MOSFET RF POWER
Contextual Info: MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS

Contextual Info: 3SK257 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications • Superior cross modulation performance. • Low noise figure: NF = 2.0dB typ.

Contextual Info: 3SK259 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK259 TV Tuner, UHF RF Amplifier Applications TV Tuner VHF Wide Band RF Amplifier Applications • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.025 pF typ.

Contextual Info: 3SK257 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. • Low noise figure: NF = 2.0dB typ.

3SK22

Abstract: 3SK225
Contextual Info: 3SK225 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK225 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications • Superior cross modulation performance. • Low noise figure: NF = 2.0dB typ.

3SK257

Abstract: marking h2
Contextual Info: TOSHIBA 3SK257 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK257 Unit in mm TV TUNER, VHF RF AMPLIFIER APPLICATIONS. FM TUNER APPLICATIONS. TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • • 2.1 + 0 . 1 Superior Cross Modulation Performance.

3SK259

Abstract: Marking H2
Contextual Info: TO SH IBA 3SK259 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK259 TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance

3SK259

Contextual Info: 3SK259 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK259 TV Tuner, UHF RF Amplifier Applications TV Tuner VHF Wide Band RF Amplifier Applications • Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.025 pF typ.

3SK259

Contextual Info: 3SK259 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK259 TV Tuner, UHF RF Amplifier Applications TV Tuner VHF Wide Band RF Amplifier Applications • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.025 pF typ.

MRF151G

Abstract: mrf151g 300 1202 transistor
Contextual Info: MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS