DUAL RF TRANSISTOR Search Results

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

MQE9

Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Hitachi DSA002743

Abstract: Nippon capacitors
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

HD155121F

Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Contextual Info: O b f*c tlv * pacification P h ilip * Sem iconductor* RF Com m unication* Product* Low-power dual frequency synthesizer for radio communications UMA1015M FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015M is a low-power dual frequency

MAX4589

Abstract: MAX4589CAP MAX4589CPP MAX4589CWP MAX4589EAP MAX4589EPP MAX4589EWP Nippon capacitors
Contextual Info: 19-1424; Rev 0; 1/99 Low-Voltage, High-Isolation, Dual 2-Channel RF/Video Multiplexer Features The MAX4589 low-voltage, dual 2-channel multiplexer is designed for RF and video signal processing at frequencies up to 200MHz in 50Ω and 75Ω systems. On-chip

Nippon capacitors

Contextual Info: 19-1424; Rev 0; 1/99 Low-Voltage, High-Isolation, Dual 2-Channel RF/Video Multiplexer Features The MAX4589 low-voltage, dual 2-channel multiplexer is designed for RF and video signal processing at frequencies up to 200MHz in 50Ω and 75Ω systems. On-chip

Contextual Info: RF RF2152 Preliminary MICRO DEVICES POWER A M P L IF IE R S DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3 V POWER AM PLIFIER m anufactured on an advanced G allium A rsenide H etero­ junction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier in dual-m ode

MRF141G

Abstract: MRF141G data sheet push pull power amplifier MOSFET RF POWER
Contextual Info: MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS

Contextual Info: 3SK257 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. • Low noise figure: NF = 2.0dB typ.

3SK257

Abstract: marking h2
Contextual Info: TOSHIBA 3SK257 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK257 Unit in mm TV TUNER, VHF RF AMPLIFIER APPLICATIONS. FM TUNER APPLICATIONS. TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • • 2.1 + 0 . 1 Superior Cross Modulation Performance.

3SK259

Contextual Info: 3SK259 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK259 TV Tuner, UHF RF Amplifier Applications TV Tuner VHF Wide Band RF Amplifier Applications • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.025 pF typ.

MRF151G

Abstract: mrf151g 300 1202 transistor
Contextual Info: MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS

3SK225

Contextual Info: TOSHIBA 3SK225 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK225 TV TUNER, VHF RF AM PLIFIER APPLICATIONS FM TUNER APPLICATIONS TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Noise Figure : NF = 2.0dB Typ.

3SK257

Contextual Info: TOSHIBA 3SK257 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK257 TV TUNER, VHF RF AM PLIFIER APPLICATIONS FM TUNER APPLICATIONS TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Noise Figure : NF = 2.0dB Typ.

3N211

Abstract: 3N201 3N212 3N205 3N204 dual gate 3N203 3N213 3N202
Contextual Info: FIELD-EFFECT TRANSISTORS continued MOSFETs Dual Gate MOSFETs MOSFETs N-CHANNEL These devices are especially suited for RF amplifier and mixer applications in TV tuners, radio, etc. The Dual Gate construction also allows easy AGC control with very low power.

Contextual Info: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max

Contextual Info: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. + 0.2 2 .9 - tt 3 • Superior Cross Modulation Performance.

Contextual Info: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

Contextual Info: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

NEC 41-A 002

Abstract: 8085 based traffic control system
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • in millimeters Suitable for use as RF amplifier in UHF TV tuner. • Low C rss

3SK135A

Abstract: of 8404
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Suitable for use as RF amplifier in UHF TV tuner. 4 1 –0.06 0.16 +0.1

NEC U71

Abstract: 3SK299 U71 nec
Contextual Info: DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES PACKAGE DIMENSIONS • Suitable for use as RF amplifier in UHF TV tuner. in millimeters –4.5 V –4.5