DUAL P-CHANNEL MOSFET 30V Search Results

MLP832

Abstract: ZXMP62M832 ZXMP62M832TA
Contextual Info: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure

945e

Abstract: MS-012AA RF1K49223 RF1K4922396 TB334 tc-519 6s2a
Contextual Info: RF1K49223 Data Sheet January 2002 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET Features • 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

MS-012AA

Abstract: RF1K49223 RF1K4922396 TB334 590E-6
Contextual Info: RF1K49223 Data Sheet August 1999 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET File Number 4322.1 Features • 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

528E-3

Contextual Info: RF1K49223 Data Sheet August 1999 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET 4322.1 Features • 2.5A, 30V Title The RF1K49223 Dual P-Channel power MOSFET is F1K4 manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

FDS8858CZ

Abstract: fds8858
Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

FDS8858CZ

Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

FDS8858

Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

CG8 marking

Abstract: RG marking code transistor
Contextual Info: Central CMLDM8002AG SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002AG is a dual chip P-Channel Enhancement-mode Field Effect Transistor, manufactured by the P-Channel DMOS Process,

Contextual Info: SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features • Low VGS th : VGS(th)=1.0~3.0V  Small footprint due to small package  Low RGDS(on): N-ch, RDS(on)=24m (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66m (@ VGS=-10V, ID=-2.7A)

Contextual Info: Si3991DV Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS

Si3991DV

Abstract: 72427
Contextual Info: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS

Contextual Info: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS

Si3991DV

Contextual Info: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS

C503 power transistor

Abstract: CWDM305P
Contextual Info: CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed

Contextual Info: CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed

Contextual Info: CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed

P3098LD

Abstract: DMP3098LSD J-STD-020D p3098
Contextual Info: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PROD UCT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 65mΩ @ VGS = -10V

p3098

Contextual Info: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 65m @ VGS = -10V • 115m @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance

fairchild soic marking

Abstract: q2 marking soic-8
Contextual Info: FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

Si6955DQ

Contextual Info: Si6955DQ Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

Contextual Info: Ordering number : ENA1358B ECH8660 Power MOSFET http://onsemi.com 30V, 4.5A, 59mΩ, –30V, –4.5A, 59mΩ, Complementary Dual ECH8 Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

FDS4935A

Contextual Info: FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

FDS4935

Abstract: switch fairchild C2335
Contextual Info: FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive