DUAL N-CHANNEL POWERTRENCH MOSFET Search Results

FDMS7650DC

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features „ Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 65 A, 2.6 mΩ Features „ Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features ̈ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

FDMS7650DC

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package

FDMS7650DC

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 0.99 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package

Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features ̈ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package

FDS4897C

Abstract: Q1/KIA6402P
Contextual Info: FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

FDS4885C

Abstract: 40v 7.5a P-Channel N-Channel
Contextual Info: FDS4885C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

CBVK741B019

Abstract: F011 F63TNR F852 FDS8958A L86Z
Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

FDS8960C

Contextual Info: FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

FDS8958A

Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

Contextual Info: FDS8958 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

FDS8962C

Contextual Info: FDS8962C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

FDS8958A

Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

FDS8958A

Abstract: 58q2
Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

FDS8960C

Abstract: Dual n Dual N & P-Channel
Contextual Info: FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

FDS4895C

Abstract: PD-46
Contextual Info: FDS4895C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

Contextual Info: FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

fds8958

Contextual Info: FDS8958 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

FDS8958

Abstract: FDS8958A FDS8958A-F085
Contextual Info: FDS8958A_F085 tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

Contextual Info: FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package