DUAL N-CHANNEL MOSFET SOP8 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION SOP-8 The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10NN15 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION SOP-8 The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10NN15 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION SOP-8 The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and

DMN2040LSD

Abstract: DMN2040LSD-13 J-STD-020D N2040L
Contextual Info: DMN2040LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 26mΩ @ VGS = 4.5V

Contextual Info: SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features • Low VGS th : VGS(th)=1.0~3.0V  Small footprint due to small package  Low RGDS(on): N-ch, RDS(on)=24m (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66m (@ VGS=-10V, ID=-2.7A)

Contextual Info: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,

DMP2066

Abstract: P2066 46a p-channel P2066LD DMP2066LSD-13 P channel MOSFET 10A schematic J-STD-020D
Contextual Info: DMP2066LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance • 40mΩ @ VGS = -4.5V

AN9321

Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet January 2003 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN9321

Abstract: HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 TM Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4387.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

p3098

Contextual Info: DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 65m @ VGS = -10V • 115m @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance

UF76113

Contextual Info: 33 HUF76113DK8 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET July 1998 Description Features UttraFi Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

P2066

Contextual Info: DMP2066LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features N EW PRODUCT • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance • 40mΩ @ VGS = -4.5V

AN9321

Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF76105DK8 Semiconductor Data Sheet October 1998 Features 5A, 30 V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UD4840-H Power MOSFET 6A, 40V DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC UD4840-H is a dual N-Channel enhancement mode field effect transistor, it uses UTC’s advanced technology to provide

AF6930N

Contextual Info: AF6930N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - DC-DC Application - Surface Mount Package - Dual N-channel Device The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

76105DK8

Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76105DK8

Abstract: AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 TM Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76105DK8

Abstract: Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

4801 MOSFET

Abstract: PHB95NO3LT RT9600 block diagram of dual 12v power supply RT9237 PHB83NO3LT RT9600CS dual n-channel buck mosfet driver 12v
Contextual Info: RT9600 Preliminary Synchronous-Rectified Buck MOSFET Drivers General Description Features The RT9600 is a high frequency, dual MOSFET z Drives Two N-Channel MOSFETs driver specifically designed to drive two power N- z Adaptive Shoot-Through Protection Channel MOSFETs in a synchronous-rectified buck

76105dk8

Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in