DUAL N-CHANNEL 2.5V Search Results

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

FDMJ1032C

Abstract: marking 032 SC-75 Dual N & P-Channel
Contextual Info: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement

Dual N-Channel

Abstract: TLM832D
Contextual Info: CTLDM7120-M832D SURFACE MOUNT TLMTM DUAL, N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7120M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel

FDD3510H

Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: CMLDM7003T CMLDM7003TG* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process,

mosfet nA idss

Abstract: transistor cr marking "MARKING CODE CR" mosfet low vgs
Contextual Info: Central CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and

95160

Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
Contextual Info: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102R Dual N-channel dual gate MOS-FET Preliminary specification 2000 Jan 06 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102R PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single

transistor cr marking

Contextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS

transistor cr marking

Contextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS

Contextual Info: FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: Features LTC3633A/LTC3633A-1 Dual Channel 3A, 20V Monolithic Synchronous Step-Down Regulator Description n n n n n n n The LTC 3633A is a high efficiency, dual-channel monolithic synchronous buck regulator using a controlled on-time, current mode architecture, with phase lockable switching

SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N FDC6401N
Contextual Info: FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDC6401N

Contextual Info: FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: Features LTC3633A-2/LTC3633A-3 Dual Channel 3A, 20V Monolithic Synchronous Step-Down Regulator Description n n n n n n n The LTC 3633A-2 is a high efficiency, dual-channel monolithic synchronous buck regulator using a controlled on-time, current mode architecture, with phase lockable switching

2507N

Abstract: FDW2507N C1923
Contextual Info: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

Contextual Info: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

2502P

Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

MOSFET TSSOP-8

Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Contextual Info: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

DIODE S4 75a

Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

Contextual Info: DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 24m @ VGS = 4.5V • 29m @ VGS = 2.5V • 37m @ VGS = 1.8V Low Gate Threshold Voltage

Contextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an enhancement-mode dual N-Channel MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver