DTS1104 Search Results

DTS-11

Abstract: DTD5-12D100 DTD5-15D80 dts12-030-12 dtd24-15d135 DTS11-018-5 dtd23 dts24 DTS5-12S200 DTD23-027-12
Contextual Info: ASTEC AMERICA/SEMICOND 52C D • f —S 7 1013152 OOOObTb 1 M A A I DTS,DTD SEMICONDUCTOR CIRCUITS Low Cost, Miniature DC/DC Converters • R E LIA B LE - M T B F EXCEE D S 200,000 H O U R S of sw itching spikes appearing at the co n ve rte r input. • H IG H E R E F F IC IE N C Y - T O 8 0 %

Contextual Info: The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide high Q.E., high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of

PGAS1S09

Abstract: PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06
Contextual Info: This series of devices employs elements from 75µm wide single sources to four stacks of 600µm wide elements. Using standard InGaAs quantum wells grown for 905nm, this group of devices effectively replaces conventional double heterostructure GaAsAlGaAs diodes in that wavelength